MITSUBISHI Nch POWER MOSFET
FS2VS-14A
HIGH-SPEED SWITCHING USE
FS2VS-14A
¡VDSS .............................................................................700V
¡r
DS (ON) (MAX) ........................................................... 9.75Ω
D ......................................................................................... 2A
¡I
OUTLINE DRAWING Dimensions in mm
r
+0.3
–0.5
3.0
q
10.5MAX.
1
qwe
5
wr
e
0.8
1.5MAX.
9.8 ± 0.5
8.6 ± 0.3
1.5MAX.
4.5
2.6 ± 0.4
q GATE
w DRAIN
e SOURCE
r DRAIN
4.5
0.5
1.3
+0.3
0
–0
TO-220S
(1.5)
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.
MAXIMUM RATINGS (Tc = 25°C)
Parameter ConditionsSymbol Ratings Unit
VDSS
VGSS
ID
IDM
PD
Tch
Tstg
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
—
VGS = 0V
VDS = 0V
Typical value
700
±30
2
6
65
–55 ~ +150
–55 ~ +150
1.2
V
V
A
A
W
°C
°C
g
Feb.1999
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
V
(BR) DSS
V
(BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
ID = 1mA, VGS = 0V
IGS = ±100µA, VDS = 0V
VGS = ±25V , VDS = 0V
VDS = 700V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 1A, VGS = 10V
ID = 1A, VGS = 10V
ID = 1A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 200V, ID = 1A, VGS = 10V,
RGEN = RGS = 50Ω
IS = 1A, VGS = 0V
Channel to case
MITSUBISHI Nch POWER MOSFET
FS2VS-14A
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
700
±30
—
—
2
—
—
0.72
—
—
—
—
—
—
—
—
—
—
—
—
—
3
7.47
7.47
1.2
270
30
5
10
12
33
21
1.0
—
—
—
±10
9.75
9.75
—
—
—
—
—
—
—
—
1.5
1.92
V
V
µA
mA
1
V
4
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
100
80
60
40
20
POWER DISSIPATION PD (W)
0
0 20050 100 150
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
5
4
3
(TYPICAL)
PD = 65W
C (°C)
TC = 25°C
Pulse Test
VGS = 20V
10V
MAXIMUM SAFE OPERATING AREA
1
10
7
5
3
2
0
10
7
5
3
2
–1
10
DRAIN CURRENT ID (A)
10
7
5
3
2
–2
10
TC = 25°C
Single Pulse
0
210
1
357 2 10
357 2 10
DRAIN-SOURCE VOLTAGE V
OUTPUT CHARACTERISTICS
(TYPICAL)
2.0
TC = 25°C
Pulse Test
VGS = 20V
1.6
1.2
2
10V
tw = 10ms
DC
357
DS (V)
5V
100ms
1ms
10ms
100ms
3
2
1
DRAIN CURRENT ID (A)
0
0 1020304050
DRAIN-SOURCE VOLTAGE VDS (V)
5V
4V
0.8
0.4
DRAIN CURRENT ID (A)
0
0 4 8 12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
4.5V
4V
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS2VS-14A
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
50
40
30
20
VOLTAGE VDS (ON) (V)
10
DRAIN-SOURCE ON-STATE
0
0 4 8 12 16 20
GATE-SOURCE VOLTAGE V
TRANSFER CHARACTERISTICS
(TYPICAL)
5
4
3
2
1
DRAIN CURRENT ID (A)
TC = 25°C
Pulse Test
ID = 3A
2A
1A
GS (V)
TC = 25°C
V
DS = 50V
Pulse Test
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
20
16
VGS = 10V
12
DS (ON) (Ω)
8
4
RESISTANCE r
DRAIN-SOURCE ON-STATE
0
–1
210
10
0
357 2 10
DRAIN CURRENT I
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
1
10
7
5
3
fs (S)
2
0
10
7
125°C
5
3
ADMITTANCE y
FORWARD TRANSFER
2
TC = 25°C
Pulse Test
20V
1
357 2 10
TC = 25°C
75°C
357
D (A)
VDS = 10V
Pulse Test
2
0
0 4 8 12 16 20
GATE-SOURCE VOLTAGE V
DRAIN-SOURCE VOLTAGE
3
10
7
5
3
2
2
10
7
5
3
2
1
10
CAPACITANCE
7
Ciss, Coss, Crss (pF)
5
Tch = 25°C
3
f = 1MH
2
VGS = 0V
0
10
210
357 2 10
DRAIN-SOURCE VOLTAGE V
CAPACITANCE VS.
(TYPICAL)
Z
0
1
357 2 10
GS (V)
Ciss
Coss
Crss
2
357 2
DS (V)
–1
10
–1
10
23 57 10
DRAIN CURRENT I
SWITCHING CHARACTERISTICS
(TYPICAL)
3
10
7
5
3
2
2
10
7
5
3
2
1
10
7
5
SWITCHING TIME (ns)
3
2
0
10
–1
10
23457 10
DRAIN CURRENT ID (A)
0
10
23 57
Tch = 25°C
V
DD = 200V
V
GS = 10V
R
GEN = RGS = 50Ω
td(off)
tr
td(on)
0
10
23457
1
D (A)
tf
1
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS2VS-14A
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
20
Tch = 25°C
I
D
16
= 2A
VDS = 250V
(V)
GS
12
400V
8
600V
4
GATE-SOURCE VOLTAGE V
0
0 4 8 12 16 20
GATE CHARGE Q
g
(nC)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(t°C)
(25°C)
DS (ON)
DS (ON)
10
1
7
5
(TYPICAL)
VGS = 10V
I
D
= 1/2I
Pulse Test
3
2
0
10
7
5
3
2
–1
10
–50 0 50 100 150
DRAIN-SOURCE ON-STATE RESISTANCE r
DRAIN-SOURCE ON-STATE RESISTANCE r
CHANNEL TEMPERATURE Tch (°C)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
(A)
S
10
8
VGS = 0V
Pulse Test
6
4
2
SOURCE CURRENT I
0
0 0.8 1.6 2.4 3.2 4.0
SOURCE-DRAIN VOLTAGE V
TC = 125°C
75°C
25°C
SD
(V)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
5.0
D
VDS = 10V
I
D
= 1mA
4.0
(V)
3.0
GS (th)
2.0
VOLTAGE V
1.0
GATE-SOURCE THRESHOLD
0
–50 0 50 100 150
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
(t°C)
(25°C)
(BR) DSS
(BR) DSS
1.4
CHANNEL TEMPERATURE
(TYPICAL)
VGS = 0V
I
D
= 1mA
1.2
1.0
0.8
0.6
0.4
–50 0 50 100 150
DRAIN-SOURCE BREAKDOWN VOLTAGE V
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
TRANSIENT THERMAL IMPEDANCE
(°C/W)
1
10
7
(ch–c)
5
th
3
D = 1.0
2
0.5
0
10
7
0.2
5
0.1
3
10
10
2
–1
7
5
3
2
–2
–4
10
23 57
0.05
0.02
0.01
Single Pulse
10
TRANSIENT THERMAL IMPEDANCE Z
CHARACTERISTICS
–3
–2
23 57 23 57 23 57
10
10
–1
PULSE WIDTH t
10023 57
w
(s)
P
tw
D
DM
T
tw
=
T
10123 57
2
10
Feb.1999
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