Feb.1999
FS2ASJ-3
OUTLINE DRAWING Dimensions in mm
MP-3
MITSUBISHI Nch POWER MOSFET
FS2ASJ-3
HIGH-SPEED SWITCHING USE
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
V
V
A
A
A
A
A
W
°C
°C
g
150
±20
2
8
2
2
8
20
–55 ~ +150
–55 ~ +150
0.26
V
GS = 0V
V
DS = 0V
L = 100µH
Typical value
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
Symbol
MAXIMUM RATINGS (Tc = 25°C)
Parameter Conditions Ratings Unit
¡4V DRIVE
¡V
DSS ................................................................................150V
¡r
DS (ON) (MAX) ..............................................................0.75Ω
¡I
D ............................................................................................2A
¡Integrated Fast Recovery Diode (TYP.)
............. 65ns
6.5
2.3
2.3
0.9MAX.
1.0MAX.
2.3
1.0
0.5 ± 0.1
5.5 ± 0.2
10MAX.
2.3MIN. 1.5 ± 0.2
0.5 ± 0.2
0.8
5.0 ± 0.2
A
q GATE
w DRAIN
e SOURCE
r DRAIN
wr
q
qwe
r
e
Feb.1999
V
(BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
C
iss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
MITSUBISHI Nch POWER MOSFET
FS2ASJ-3
HIGH-SPEED SWITCHING USE
V
µA
mA
V
Ω
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
150
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.5
0.58
0.61
0.58
4.5
360
62
16
11
9
35
13
1.0
—
65
—
±0.1
0.1
2.0
0.75
0.81
0.75
—
—
—
—
—
—
—
—
1.5
6.25
—
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol UnitParameter Test conditions
Limits
Min. Typ. Max.
ID = 1mA, VGS = 0V
V
GS = ±20V, VDS = 0V
V
DS = 150V, VGS = 0V
I
D = 1mA, VDS = 10V
I
D = 1A, VGS = 10V
I
D = 1A, VGS = 4V
I
D = 1A, VGS = 10V
I
D = 1A, VDS = 5V
V
DS = 10V, VGS = 0V, f = 1MHz
V
DD = 80V, ID = 1A, VGS = 10V, RGEN = RGS = 50Ω
I
S = 1A, VGS = 0V
Channel to case
I
S = 2A, dis/dt = –100A/µs
PERFORMANCE CURVES
0
8
16
24
32
40
0 20050 100 150
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(°C)
POWER DISSIPATION P
D
(W)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN CURRENT I
D
(A)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE VDS (V)
10
–1
2
3
5
7
10
0
2
3
5
7
10
1
2
3
5
7
210
1
357 2 10
2
357 2 10
3
357
2
2
tw = 10ms
TC = 25°C
Single Pulse
100ms
10ms
1ms
DC
0
1.0
2.0
3.0
4.0
5.0
0 1.0 2.0 3.0 4.0 5.0
6V
PD = 20W
VGS = 10V
Tc = 25°C
Pulse Test
3V
2.5V
4V
0
0.4
0.8
1.2
1.6
2.0
0 0.4 0.8 1.2 1.6 2.0
6V
4V
3V
2.5V
VGS = 10V
Tc = 25°C
Pulse Test
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS2ASJ-3
HIGH-SPEED SWITCHING USE
10
1
3
5
7
10
2
2
3
5
7
10
3
2
3
2
5
7
10
0
210
1
357357 2 10
2
357 23
2
Ciss
Coss
Crss
Tch = 25°C
V
GS
= 0V
f = 1MH
Z
10
0
10
1
2
3
5
7
10
2
2
3
5
7
10
3
2
3
5
7
10
–1
10
0
23457 10
1
23457
t
d(off)
t
d(on)
t
r
Tch = 25°C
V
DD
= 80V
V
GS
= 10V
R
GEN
= RGS = 50Ω
t
f
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(Ω)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER
ADMITTANCE y
fs
(S)
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT ID (A)
CAPACITANCE
Ciss, Coss, Crss (pF)
SWITCHING TIME (ns)
10
–1
10
0
23457 10
1
23457
10
–1
10
0
2
3
4
5
7
10
1
2
3
4
5
7
TC = 25°C
75°C
125°C
VDS = 5V
Pulse Test
0
1.0
2.0
3.0
4.0
5.0
0246810
ID = 3A
2A
1A
Tc = 25°C
Pulse Test
0
2
4
6
8
10
0246810
Tc = 25°C
V
DS
= 10V
Pulse Test
0
0.2
0.4
0.6
0.8
1.0
10
–2
210
–1
357 2 10
0
357 2 10
1
357
VGS = 4V
10V
Tc = 25°C
Pulse Test
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS2ASJ-3
HIGH-SPEED SWITCHING USE
0
0.8
1.6
2.4
3.2
4.0
–50 0 50 100 150
VDS = 10V
I
D
= 1mA
0
2
4
6
8
10
0 4 8 12 16 20
VDS = 50V
80V
100V
Tch = 25°C
I
D
= 2A
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
GATE CHARGE Q
g (nC)
GATE-SOURCE VOLTAGE VGS (V)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
SOURCE-DRAIN VOLTAGE V
SD (V)
SOURCE CURRENT IS (A)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(t°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th) (V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
PULSE WIDTH t
w (s)
TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(t°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25°C)
10
–1
10
0
2
3
4
5
7
10
1
2
3
4
5
7
–50 0 50 100 150
VGS = 10V
I
D
= 1/2I
D
Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
–50 0 50 100 150
VGS = 0V
I
D
= 1mA
0
2
4
6
8
10
0 0.4 0.8 1.2 1.6 2.0
TC = 125°C
75°C
25°C
VGS = 0V
Pulse Test
10
–1
10
0
2
3
5
7
10
1
2
3
5
7
10
2
2
3
5
7
10
–4
23 57 23 57 23 57 23 57
10023 57
10123 57
10
2
10
–3
10
–2
10
–1
P
DM
tw
D
=
T
tw
T
0.5
0.2
D = 1.0
Single Pulse
0.1
0.05
0.02
0.01
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