Mitsubishi Electric Corporation Semiconductor Group FS2AS-14A Datasheet

MITSUBISHI Nch POWER MOSFET

FS2AS-14A

HIGH-SPEED SWITCHING USE

FS2AS-14A

¡VDSS ................................................................................700V

¡r

DS (ON) (MAX) ..............................................................9.75Ω

¡I

D ............................................................................................2A

OUTLINE DRAWING Dimensions in mm

0.9MAX.

2.3

q

4

2.3

1

6.5

5.0 ± 0.2

1.0MAX.

2

wr

e

1.0

2.3

3

10MAX.

5.5 ± 0.2

2.3MIN. 1.5 ± 0.2

q GATE
w DRAIN
e SOURCE
r DRAIN

0.5 ± 0.1

0.5 ± 0.2

0.8

MP-3

APPLICATION

SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, per­sonal computer etc.

MAXIMUM RATINGS (Tc = 25°C)

Parameter ConditionsSymbol Ratings Unit
VDSS
VGSS
ID
IDM
PD
Tch
Tstg

Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight

—

VGS = 0V
VDS = 0V

Typical value

700
±30

2
6

55
–55 ~ +150
–55 ~ +150

0.26

V
V
A
A

W

°C
°C

g

Feb.1999

ELECTRICAL CHARACTERISTICS (Tch = 25°C)

Symbol UnitParameter Test conditions

V

(BR) DSS

V

(BR) GSS

IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)

Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance

ID = 1mA, VGS = 0V
IGS = ±100µA, VDS = 0V
VGS = ±25V , VDS = 0V
VDS = 700V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 1A, VGS = 10V
ID = 1A, VGS = 10V
ID = 1A, VDS = 10V

VDS = 25V, VGS = 0V, f = 1MHz

VDD = 200V, ID = 1A, VGS = 10V,
RGEN = RGS = 50Ω

IS = 1A, VGS = 0V
Channel to case

MITSUBISHI Nch POWER MOSFET

FS2AS-14A

HIGH-SPEED SWITCHING USE

Limits

Min. Typ. Max.

700
±30

—
—

2
—
—

0.72
—
—
—
—
—
—
—
—
—

—
—
—
—

3

7.47

7.47

1.2

270

30

5
10
12
33
21

1.0
—

—
—

±10

9.75

9.75
—
—
—
—
—
—
—
—

1.5

2.27

V
V

µA

mA

1

V

4

Ω

V

S
pF
pF
pF

ns
ns
ns
ns

V

°C/W

PERFORMANCE CURVES

POWER DISSIPATION DERATING CURVE

100

(W)

80

D

60

40

20

POWER DISSIPATION P

0

0 20050 100 150

CASE TEMPERATURE T

OUTPUT CHARACTERISTICS

5

4

(A)

D

3

(TYPICAL)

C

(°C)

TC = 25°C
Pulse Test

VGS = 20V

10V

MAXIMUM SAFE OPERATING AREA

1

10

7
5

3
2

(A)

D

0

10

7
5

3
2

–1

10

7
5

DRAIN CURRENT I

3
2

–2

10

10

TC = 25°C
Single Pulse

0

210

1

357 2 10

357 2 10

DRAIN-SOURCE VOLTAGE V

OUTPUT CHARACTERISTICS

(TYPICAL)

2.0

(A)

D

1.6

TC = 25°C
Pulse Test

VGS = 20V

1.2

2

DC

10V

tw = 10ms

357

DS

(V)

5V

100ms

1ms

10ms
100ms

3

2

1

DRAIN CURRENT I

0

0 1020304050

PD = 55W

DRAIN-SOURCE VOLTAGE VDS (V)

5V

4V

0.8

0.4

DRAIN CURRENT I

0

0 4 8 12 16 20

DRAIN-SOURCE VOLTAGE VDS (V)

4.5V

4V

Feb.1999

MITSUBISHI Nch POWER MOSFET

FS2AS-14A

HIGH-SPEED SWITCHING USE

ON-STATE VOLTAGE VS.

GATE-SOURCE VOLTAGE

(TYPICAL)

50

40

30

20

VOLTAGE VDS (ON) (V)

10

DRAIN-SOURCE ON-STATE

0

0 4 8 12 16 20

GATE-SOURCE VOLTAGE V

TRANSFER CHARACTERISTICS

(TYPICAL)

5

4

3

2

1

DRAIN CURRENT ID (A)

TC = 25°C
Pulse Test

ID = 3A

2A

1A

GS (V)

TC = 25°C

DS = 50V

V
Pulse Test

ON-STATE RESISTANCE VS.

DRAIN CURRENT

(TYPICAL)

20

16

VGS = 10V

12

DS (ON) (Ω)

8

4

RESISTANCE r

DRAIN-SOURCE ON-STATE

0

–1

10

210

0

357 2 10

DRAIN CURRENT I

FORWARD TRANSFER ADMITTANCE

VS.DRAIN CURRENT

(TYPICAL)

1

10

7
5

3

fs (S)

2

0

10

7

125°C

5
3

ADMITTANCE y

FORWARD TRANSFER

2

TC = 25°C
Pulse Test

20V

1

357 2 10

TC = 25°C

75°C

357

D (A)

VDS = 10V
Pulse Test

2

0

0 4 8 12 16 20

GATE-SOURCE VOLTAGE V

DRAIN-SOURCE VOLTAGE

3

10

7
5

3
2

2

10

7
5

3
2

1

10

CAPACITANCE

7

Ciss, Coss, Crss (pF)

5

Tch = 25°C

3

f = 1MH

2

VGS = 0V

0

10

210

357 2 10

DRAIN-SOURCE VOLTAGE V

CAPACITANCE VS.

(TYPICAL)

Z

0

1

357 2 10

GS (V)

Ciss

Coss

Crss

2

357 2

DS (V)

–1

10

–1

10

23 57 10

DRAIN CURRENT I

SWITCHING CHARACTERISTICS

(TYPICAL)

3

10

7
5

3
2

2

10

7
5

3
2

1

10

7
5

SWITCHING TIME (ns)

3
2

0

10

–1

10

23457 10

DRAIN CURRENT ID (A)

0

10

23 57

Tch = 25°C

DD = 200V

V

GS = 10V

V

GEN = RGS = 50Ω

R

td(off)

tr

td(on)

0

10

23457

1

D (A)

tf

1

Feb.1999

MITSUBISHI Nch POWER MOSFET

FS2AS-14A

HIGH-SPEED SWITCHING USE

GATE-SOURCE VOLTAGE

VS.GATE CHARGE

(TYPICAL)

20

Tch = 25°C

D

= 2A

I

(V)

GS

16

VDS = 250V

12

400V

8

600V

4

GATE-SOURCE VOLTAGE V

0

0 4 8 12 16 20

GATE CHARGE Q

g

(nC)

ON-STATE RESISTANCE VS.

CHANNEL TEMPERATURE

(t°C)

(25°C)

DS (ON)

DS (ON)

10

1

7
5

(TYPICAL)

VGS = 10V

D

= 1/2I

I
Pulse Test

3
2

0

10

7
5

3
2

–1

10

–50 0 50 100 150

DRAIN-SOURCE ON-STATE RESISTANCE r

DRAIN-SOURCE ON-STATE RESISTANCE r

CHANNEL TEMPERATURE Tch (°C)

SOURCE-DRAIN DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

(A)

S

10

8

VGS = 0V
Pulse Test

6

4

2

SOURCE CURRENT I

0

0 0.8 1.6 2.4 3.2 4.0

SOURCE-DRAIN VOLTAGE V

TC = 125°C
75°C
25°C

SD

(V)

THRESHOLD VOLTAGE VS.

CHANNEL TEMPERATURE

(TYPICAL)

5.0

D

VDS = 10V

D

= 1mA

I

4.0

(V)

3.0

GS (th)

2.0

VOLTAGE V

1.0

GATE-SOURCE THRESHOLD

0

–50 0 50 100 150

CHANNEL TEMPERATURE Tch (°C)

BREAKDOWN VOLTAGE VS.

(t°C)

(25°C)

(BR) DSS

(BR) DSS

1.4

CHANNEL TEMPERATURE

(TYPICAL)

VGS = 0V

D

= 1mA

I

1.2

1.0

0.8

0.6

0.4
–50 0 50 100 150

DRAIN-SOURCE BREAKDOWN VOLTAGE V

CHANNEL TEMPERATURE Tch (°C)

DRAIN-SOURCE BREAKDOWN VOLTAGE V

TRANSIENT THERMAL IMPEDANCE

(°C/W)

1

10

7

(ch–c)

5

th

D = 1.0

3
2

0.5

0

10

0.2

7
5

0.1

3

10

10

2

–1

7
5

3
2

–2

10

–4

23 57

0.05

0.02

0.01
Single Pulse

10

TRANSIENT THERMAL IMPEDANCE Z

CHARACTERISTICS

–3

–2

23 57 23 57 23 57

10

10

–1

PULSE WIDTH t

10023 57

w

(s)

10123 57

2

10

Feb.1999