MITSUBISHI Nch POWER MOSFET
FS10VSJ-06
HIGH-SPEED SWITCHING USE
FS10VSJ-06
¡4V DRIVE
¡V
DSS .................................................................................. 60V
DS (ON) (MAX) ..............................................................70mΩ
¡r
D ......................................................................................... 10A
¡I
¡Integrated Fast Recovery Diode (TYP.)
............. 55ns
OUTLINE DRAWING Dimensions in mm
+0.3
–0.5
3.0
q
10.5MAX.
1
qwe
5
wr
e
0.8
1.5MAX.
8.6 ± 0.3
1.5MAX.
2.6 ± 0.4
q GATE
w DRAIN
e SOURCE
r DRAIN
r
4.5
9.8 ± 0.5
B
4.5
0.5
1.3
+0.3
0
–0
TO-220S
(1.5)
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
Parameter Conditions Ratings Unit
GS = 0V
V
DS = 0V
V
L = 100µH
Typical value
60
±20
10
40
10
10
40
30
–55 ~ +150
–55 ~ +150
1.2
V
V
A
A
A
A
A
W
°C
°C
g
Feb.1999
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
)
)
Symbol UnitParameter Test conditions
V
(BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
iss
C
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
GS = ±20V, VDS = 0V
V
DS = 60V, VGS = 0V
V
D = 1mA, VDS = 10V
I
D = 5A, VGS = 10V
I
D = 5A, VGS = 4V
I
D = 5A, VGS = 10V
I
D = 5A, VDS = 5V
I
V
DS = 10V, VGS = 0V, f = 1MHz
DD = 30V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω
V
S = 5A, VGS = 0V
I
Channel to case
S = 10A, dis/dt = –100A/µs
I
MITSUBISHI Nch POWER MOSFET
FS10VSJ-06
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
60
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.5
53
66
0.265
13
800
190
80
14
17
65
40
1.0
—
55
—
±0.1
0.1
2.0
70
91
0.35
—
—
—
—
—
—
—
—
1.5
4.17
—
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
40
30
20
10
POWER DISSIPATION PD (W)
0
0 20050 100 150
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
20
Tc = 25°C
Pulse Test
16
VGS = 10V
12
8
(TYPICAL)
8V
6V
C (°C)
4V
PD = 30W
MAXIMUM SAFE OPERATING AREA
5
3
2
1
10
7
5
3
2
0
10
DRAIN CURRENT ID (A)
10
7
5
3
2
–1
7
5
TC = 25°C
Single Pulse
0
357 2 10
210
357 2210
DRAIN-SOURCE VOLTAGE V
OUTPUT CHARACTERISTICS
(TYPICAL)
10
8VVGS = 10V
6V
8
6
4
1
4V
tw = 10ms
357
DS (V)
100ms
1ms
10ms
DC
3V
2
4
DRAIN CURRENT ID (A)
0
0 0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V
3V
2
DRAIN CURRENT ID (A)
0
0 0.2 0.4 0.6 0.8 1.0
DRAIN-SOURCE VOLTAGE VDS (V
Tc = 25°C
Pulse Test
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10VSJ-06
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
2.0
1.6
(V)
1.2
DS (ON)
0.8
VOLTAGE V
0.4
DRAIN-SOURCE ON-STATE
0
0246810
GATE-SOURCE VOLTAGE V
TRANSFER CHARACTERISTICS
(TYPICAL)
40
32
(A)
D
24
16
8
DRAIN CURRENT I
Tc = 25°C
Pulse Test
ID = 15A
10A
GS
(V)
Tc = 25°C
DS
= 10V
V
Pulse Test
5A
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
100
Tc = 25°C
Pulse Test
80
(mΩ)
60
DS (ON)
40
20
DRAIN-SOURCE ON-STATE
RESISTANCE r
0
0
357 2 10
357 2 10
10
DRAIN CURRENT I
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
2
10
7
5
4
(S)
3
fs
10
2
TC = 25°C
1
75°C
125°C
7
5
4
3
ADMITTANCE y
FORWARD TRANSFER
2
VGS = 4V
10V
1
32357
D
(A)
VDS = 5V
Pulse Test
2
0
0246810
GATE-SOURCE VOLTAGE V
DRAIN-SOURCE VOLTAGE
2
4
10
7
5
3
2
3
10
7
5
3
2
CAPACITANCE
Ciss, Coss, Crss (pF)
2
10
7
5
3
2
10
DRAIN-SOURCE VOLTAGE V
CAPACITANCE VS.
(TYPICAL)
0
210
1
357357 2 10
GS
(V)
Tch = 25°C
Z
f = 1MH
VGS = 0V
Ciss
Coss
Crss
2
357 23
DS
(V)
0
10
0
10
23457 10
DRAIN CURRENT I
SWITCHING CHARACTERISTICS
(TYPICAL)
2
10
t
d(off)
7
5
4
t
f
3
2
t
d(on)
1
10
t
r
7
5
4
3
SWITCHING TIME (ns)
2
0
10
0
10
23457 10
DRAIN CURRENT ID (A)
1
10
Tch = 25°C
V
V
R
1
10
DD
GS
GEN
23457
D
(A)
= 30V
= 10V
= RGS = 50Ω
23457
2
2
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS10VSJ-06
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
10
Tch = 25°C
I
D
(V)
GS
= 10A
8
6
VDS = 10V
20V
40V
4
2
GATE-SOURCE VOLTAGE V
0
0 4 8 12 16 20
g
GATE CHARGE Q
(nC)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(t°C)
(25°C)
DS (ON)
DS (ON)
10
1
7
5
4
VGS = 10V
D
= 1/2I
I
Pulse Test
(TYPICAL)
D
3
2
0
10
7
5
4
3
2
–1
10
–50 0 50 100 150
DRAIN-SOURCE ON-STATE RESISTANCE r
DRAIN-SOURCE ON-STATE RESISTANCE r
CHANNEL TEMPERATURE Tch (°C)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
40
VGS = 0V
Pulse Test
32
(A)
S
24
16
8
SOURCE CURRENT I
0
0 0.4 0.8 1.2 1.6 2.0
SOURCE-DRAIN VOLTAGE V
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
4.0
VDS = 10V
D
= 1mA
I
3.2
(V)
2.4
GS (th)
1.6
VOLTAGE V
0.8
GATE-SOURCE THRESHOLD
0
–50 0 50 100 150
CHANNEL TEMPERATURE Tch (°C)
TC = 125°C
75°C
25°C
SD
(V)
BREAKDOWN VOLTAGE VS.
(t°C)
(25°C)
(BR) DSS
(BR) DSS
1.4
CHANNEL TEMPERATURE
(TYPICAL)
VGS = 0V
D
= 1mA
I
1.2
1.0
0.8
0.6
0.4
–50 0 50 100 150
DRAIN-SOURCE BREAKDOWN VOLTAGE V
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
TRANSIENT THERMAL IMPEDANCE
(°C/W)
2
10
7
(ch–c)
5
th
3
2
1
10
7
D = 1.0
5
3
0.5
2
0.2
0
10
10
7
5
3
2
–1
10
–4
23 57
0.1
0.05
0.02
0.01
Single Pulse
10
TRANSIENT THERMAL IMPEDANCE Z
CHARACTERISTICS
–3
–2
23 57 23 57 23 57
10
10
–1
PULSE WIDTH t
10023 57
w
(s)
P
DM
tw
D
T
tw
=
T
10123 57
2
10
Feb.1999
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