MITSUBISHI Nch POWER MOSFET
FK20SM-10
HIGH-SPEED SWITCHING USE
FK20SM-10
DSS ................................................................................500V
¡V
¡r
DS (ON) (MAX) ..............................................................0.36Ω
¡I
D ......................................................................................... 20A
¡Integrated Fast Recovery Diode (MAX.) ........150ns
OUTLINE DRAWING Dimensions in mm
4.5
1.5
4.4
0.6 2.8
2
1.0
5.45
q
15.9MAX.
r
φ 3.2
qwe
5.45
4
wr
e
5.0
2
4
q GATE
w DRAIN
e SOURCE
r DRAIN
20.0
19.5MIN.
TO-3P
APPLICATION
Servo motor drive, Robot, UPS, Inverter Fluorecent
lamp, etc.
MAXIMUM RATINGS (Tc = 25°C)
Parameter ConditionsSymbol Ratings Unit
VDSS
VGSS
ID
IDM
IS
ISM
PD
Tch
Tstg
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
—
VGS = 0V
VDS = 0V
Typical value
500
±30
20
60
20
60
275
–55 ~ +150
–55 ~ +150
4.8
V
V
A
A
A
A
W
°C
°C
g
Feb.1999
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
V
(BR) DSS
V
(BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
iss
C
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±25V , VDS = 0V
VDS = 500V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 10A, VGS = 10V
ID = 10A, VGS = 10V
I
D = 10A, VDS = 10V
DS = 25V, VGS = 0V, f = 1MHz
V
VDD = 200V, ID = 10A, VGS = 10V, RGEN = RGS = 50Ω
I
S = 10A, VGS = 0V
Channel to case
IS = 20A, dis/dt = –100A/µs
MITSUBISHI Nch POWER MOSFET
FK20SM-10
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
500
±30
—
—
2
—
—
7.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3
0.28
2.80
10.0
2800
350
55
60
80
270
80
1.5
—
—
—
—
±10
0.36
3.60
—
—
—
—
—
—
—
—
2.0
0.45
150
V
V
µA
mA
1
V
4
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
300
250
(W)
D
200
150
100
50
POWER DISSIPATION P
0
CASE TEMPERATURE T
C
(°C)
MAXIMUM SAFE OPERATING AREA
2
10
7
5
3
2
(A)
D
1
10
7
5
3
2
0
10
7
5
3
2
–1
10
TC = 25°C
Single Pulse
0
23 5710
1
23 5710223 5710
DRAIN CURRENT I
200150100500
10
DRAIN-SOURCE VOLTAGE V
tw=100µs
1ms
10ms
100ms
DC
DS
(V)
3
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK20SM-10
HIGH-SPEED SWITCHING USE
OUTPUT CHARACTERISTICS
(TYPICAL)
50
(A)
D
40
PD =
275W
VGS = 20V
10V
6V
TC = 25°C
Pulse Test
30
20
10
DRAIN CURRENT I
0
0 1020304050
DRAIN-SOURCE VOLTAGE VDS (V)
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
40
TC = 25°C
Pulse Test
32
(V)
5V
4V
OUTPUT CHARACTERISTICS
(TYPICAL)
VSD = 20V
10V
6V
(A)
D
20
16
12
8
4
DRAIN CURRENT I
0
0 4 8 12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
0.5
TC = 25°C
Pulse Test
0.4
(Ω)
VGS = 10V
PD = 275W
TC = 25°C
Pulse Test
20V
5V
4V
24
DS (ON)
16
VOLTAGE V
8
DRAIN-SOURCE ON-STATE
0
0 4 8 12 16 20
GATE-SOURCE VOLTAGE V
TRANSFER CHARACTERISTICS
(TYPICAL)
40
32
(A)
D
24
16
8
DRAIN CURRENT I
ID = 40A
GS
TC = 25°C
VDS = 50V
Pulse Test
20A
10A
(V)
0.3
DS (ON)
0.2
0.1
RESISTANCE r
DRAIN-SOURCE ON-STATE
0
–1
5710023 5710123 5710
2310
DRAIN CURRENT I
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
2
10
VDS = 10V
7
Pulse Test
5
(S)
3
fs
2
1
10
7
5
3
ADMITTANCE y
FORWARD TRANSFER
2
125°C
D
(A)
TC = 25°C
75°C
2
0
0 4 8 12 16 20
GATE-SOURCE VOLTAGE V
GS
(V)
0
10
10023 5710
DRAIN CURRENT I
1
23 5710
D
(A)
2
Feb.1999
DRAIN-SOURCE VOLTAGE
7
5
3
2
3
10
7
5
3
2
CAPACITANCE
2
10
Ciss, Coss, Crss (pF)
7
Tch = 25°C
5
f = 1MHz
3
GS
= 0V
V
2
23 5710
DRAIN-SOURCE VOLTAGE V
CAPACITANCE VS.
(TYPICAL)
0
23 5710
1
23 5710
Ciss
Coss
Crss
DS
2
(V)
23
MITSUBISHI Nch POWER MOSFET
HIGH-SPEED SWITCHING USE
SWITCHING CHARACTERISTICS
3
10
7
5
3
2
2
10
7
t
d(on)
5
t
3
SWITCHING TIME (ns)
2
1
10
0
23 5710
10
(TYPICAL)
t
d(off)
t
f
r
DRAIN CURRENT ID (A)
FK20SM-10
Tch = 25°C
VDD = 200V
VGS = 10V
GEN
= R
GS
R
1
= 50Ω
23 5710
2
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
20
16
12
8
Tch = 25°C
ID = 20A
VDS = 100V
200V
400V
(V)
GS
4
GATE-SOURCE VOLTAGE V
0
0 40 80 120 160 200
g
GATE CHARGE Q
(nC)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(t°C)
(25°C)
DS (ON)
DS (ON)
10
1
7
5
VGS = 10V
ID = 1/2I
Pulse Test
(TYPICAL)
D
3
2
0
10
7
5
3
2
–1
10
0
50 100 150 200 250
DRAIN-SOURCE ON-STATE RESISTANCE r
DRAIN-SOURCE ON-STATE RESISTANCE r
CHANNEL TEMPERATURE Tch (°C)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
50
TC=125°C
40
(A)
S
30
20
10
SOURCE CURRENT I
0
0 0.8 1.6 2.4 3.2 4.0
SOURCE-DRAIN VOLTAGE V
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
5.0
VDS = 10V
D
= 1mA
I
4.0
(V)
3.0
GS (th)
2.0
VOLTAGE V
1.0
GATE-SOURCE THRESHOLD
0
–50 0 50 100 150
CHANNEL TEMPERATURE Tch (°C)
25°C
75°C
VGS = 0V
Pulse Test
SD
(V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK20SM-10
HIGH-SPEED SWITCHING USE
BREAKDOWN VOLTAGE VS.
(t°C)
(25°C)
CHANNEL TEMPERATURE
(TYPICAL)
1.4
(BR) DSS
(BR) DSS
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
0.4
–50 0 50 100 150
DRAIN-SOURCE BREAKDOWN VOLTAGE V
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
DIODE REVERSE VS.
SOURCE CURRENT d
is/dt CHARACTERISTIC
(TYPICAL)
10
5
3
trr
2
2
IS = 20A
GS = 0V
V
V
DD =250V
7
5
3
Irr
2
1
REVERSE RECOVERY TIME trr (ns)
10
7
5
1
23 5710
10
Tch = 25°C
T
ch = 150°C
2
23 5710
SOURCE CURRENT CHARACTERISTIC
3
10
dis/dt = –100A/µs
7
GS = 0V
V
5
V
DD = 250V
3
2
trr
2
10
7
5
Irr
3
2
REVERSE RECOVERY TIME trr (ns)
1
10
0
10
TRANSIENT THERMAL IMPEDANCE
1
10
7
rr (A)
5
3
2
0
10
7
D=1
5
3
0.5
2
0.2
–1
10
0.1
7
5
3
2
–2
10
REVERSE RECOVERY CURRENT I
10
–4
23 57
–3
23 57 23 57 23 57
10
10
10
5
3
2
1
7
5
3
2
0
7
5
3
DIODE REVERSE VS.
(TYPICAL)
Tch = 25°C
ch = 150°C
T
23 5710
1
23 5710
SOURCE CURRENT IS (A)
CHARACTERISTICS
0.05
0.02
0.01
Single Pulse
10
–2
10
–1
10023 57
PDM
tw
D=
T
tw
T
2
10
7
5
3
2
1
10
7
5
3
2
0
10
2
10123 57
rr (A)
REVERSE RECOVERY CURRENT I
2
10
SOURCE CURRENT dis/dt (–A/µs)
TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W)
PULSE WIDTH t
w (s)
Feb.1999
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