Mitsubishi Electric Corporation Semiconductor Group FK20SM-10 Datasheet
MITSUBISHI Nch POWER MOSFET
FK20SM-10
HIGH-SPEED SWITCHING USE
FK20SM-10
DSS ................................................................................500V
¡V
¡r
DS (ON) (MAX) ..............................................................0.36Ω
¡I
D ......................................................................................... 20A
¡Integrated Fast Recovery Diode (MAX.) ........150ns
OUTLINE DRAWING Dimensions in mm
4.5
1.5
4.4
0.6 2.8
2
1.0
5.45
q
15.9MAX.
r
φ 3.2
qwe
5.45
4
wr
e
5.0
2
4
q GATE
w DRAIN
e SOURCE
r DRAIN
20.0
19.5MIN.
TO-3P
APPLICATION
Servo motor drive, Robot, UPS, Inverter Fluorecent
lamp, etc.
MAXIMUM RATINGS (Tc = 25°C)
Parameter ConditionsSymbol Ratings Unit
VDSS
VGSS
ID
IDM
IS
ISM
PD
Tch
Tstg
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
—
VGS = 0V
VDS = 0V
Typical value
500
±30
20
60
20
60
275
–55 ~ +150
–55 ~ +150
4.8
V
V
A
A
A
A
W
°C
°C
g
Feb.1999
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
V
(BR) DSS
V
(BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
iss
C
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±25V , VDS = 0V
VDS = 500V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 10A, VGS = 10V
ID = 10A, VGS = 10V
I
D = 10A, VDS = 10V
DS = 25V, VGS = 0V, f = 1MHz
V
VDD = 200V, ID = 10A, VGS = 10V, RGEN = RGS = 50Ω
I
S = 10A, VGS = 0V
Channel to case
IS = 20A, dis/dt = –100A/µs
MITSUBISHI Nch POWER MOSFET
FK20SM-10
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
500
±30
—
—
2
—
—
7.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3
0.28
2.80
10.0
2800
350
55
60
80
270
80
1.5
—
—
—
—
±10
0.36
3.60
—
—
—
—
—
—
—
—
2.0
0.45
150
V
V
µA
mA
1
V
4
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
300
250
(W)
D
200
150
100
50
POWER DISSIPATION P
0
CASE TEMPERATURE T
C
(°C)
MAXIMUM SAFE OPERATING AREA
2
10
7
5
3
2
(A)
D
1
10
7
5
3
2
0
10
7
5
3
2
–1
10
TC = 25°C
Single Pulse
0
23 5710
1
23 5710223 5710
DRAIN CURRENT I
200150100500
10
DRAIN-SOURCE VOLTAGE V
tw=100µs
1ms
10ms
100ms
DC
DS
(V)
3
Feb.1999
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