MITSUBISHI Nch POWER MOSFET
FK20KM-6
HIGH-SPEED SWITCHING USE
FK20KM-6
¡VDSS ................................................................................300V
¡r
DS (ON) (MAX) ..............................................................0.33Ω
¡I
D ......................................................................................... 20A
¡V
iso ................................................................................2000V
¡Integrated Fast Recovery Diode (MAX.) ........150ns
OUTLINE DRAWING Dimensions in mm
10 ± 0.3 2.8 ± 0.2
3 ± 0.33.6 ± 0.3
15 ± 0.314 ± 0.5
123
w
q
e
6.5 ± 0.3
φ 3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
2.54 ± 0.252.54 ± 0.25
2.6 ± 0.2
q GATE
w DRAIN
e SOURCE
0.75 ± 0.15
4.5 ± 0.2
TO-220FN
APPLICATION
Servo motor drive, Robot, UPS, Inverter Fluorecent
lamp, etc.
MAXIMUM RATINGS (Tc = 25°C)
Parameter ConditionsSymbol Ratings Unit
VDSS
VGSS
ID
IDM
IS
ISM
PD
Tch
Tstg
Viso
—
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight
VGS = 0V
VDS = 0V
AC for 1minute, Terminal to case
Typical value
300
±30
20
60
20
60
40
–55 ~ +150
–55 ~ +150
2000
2.0
V
V
A
A
A
A
W
°C
°C
Vrms
g
Feb.1999
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
V
(BR) DSS
V
(BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±25V , VDS = 0V
VDS = 300V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 10A, VGS = 10V
ID = 10A, VGS = 10V
ID = 10A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 150V, ID = 10A, VGS = 10V, RGEN = RGS = 50Ω
IS = 10A, VGS = 0V
Channel to case
IS = 20A, dis/dt = –100A/µs
MITSUBISHI Nch POWER MOSFET
FK20KM-6
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
300
±30
—
—
2
—
—
8.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3
0.25
2.5
13.0
1400
280
55
25
50
150
65
1.5
—
—
—
—
±10
0.33
3.3
—
—
—
—
—
—
—
—
2.0
3.13
150
V
V
µA
mA
1
V
4
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
(W)
40
D
30
20
10
POWER DISSIPATION P
0
CASE TEMPERATURE T
C
(°C)
MAXIMUM SAFE OPERATING AREA
2
10
7
5
3
2
(A)
D
1
10
7
5
3
2
0
10
7
5
10
3
2
–1
0
10
TC = 25°C
Single Pulse
23 5710
1
23 5710223 5710
DRAIN CURRENT I
200150100500
DRAIN-SOURCE VOLTAGE V
tw=10µs
100µs
1ms
10ms
DC
DS
(V)
3
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK20KM-6
HIGH-SPEED SWITCHING USE
OUTPUT CHARACTERISTICS
(TYPICAL)
PD = 40W
(A)
D
50
40
V
GS
= 20V
10V
7V
TC = 25°C
Pulse Test
30
20
10
DRAIN CURRENT I
0
0 1020304050
DRAIN-SOURCE VOLTAGE VDS (V)
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
20
TC = 25°C
Pulse Test
16
(V)
6V
5V
ID = 40A
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS=20V 10V
6V
(A)
D
20
16
PD =
40W
12
8
4
DRAIN CURRENT I
0
0 4 8 12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
0.5
TC = 25°C
Pulse Test
0.4
(Ω)
TC = 25°C
Pulse Test
V
GS
= 10V
5.5V
5V
4.5V
20V
12
DS (ON)
8
VOLTAGE V
4
DRAIN-SOURCE ON-STATE
0
0 4 8 12 16 20
GATE-SOURCE VOLTAGE V
TRANSFER CHARACTERISTICS
(TYPICAL)
40
32
(A)
D
24
16
8
DRAIN CURRENT I
20A
10A
GS
(V)
TC = 25°C
VDS = 50V
Pulse Test
0.3
DS (ON)
0.2
0.1
RESISTANCE r
DRAIN-SOURCE ON-STATE
0
–1
5710023 5710123 5710
2310
DRAIN CURRENT I
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
2
10
V
DS
= 10V
7
Pulse Test
5
(S)
3
fs
2
1
10
7
5
3
ADMITTANCE y
FORWARD TRANSFER
2
D
125°C
2
(A)
TC = 25°C
75°C
0
0 4 8 12 16 20
GATE-SOURCE VOLTAGE V
GS
(V)
0
10
10023 5710
DRAIN CURRENT I
1
23 5710
D
(A)
2
Feb.1999
DRAIN-SOURCE VOLTAGE
5
3
2
3
10
7
5
3
2
2
10
CAPACITANCE
7
5
Ciss, Coss, Crss (pF)
3
Tch = 25°C
2
f = 1MHz
GS
= 0V
V
1
10
23 5710
DRAIN-SOURCE VOLTAGE V
CAPACITANCE VS.
(TYPICAL)
0
23 5710
1
23 5710
Ciss
Coss
Crss
DS
2
(V)
23
MITSUBISHI Nch POWER MOSFET
HIGH-SPEED SWITCHING USE
SWITCHING CHARACTERISTICS
3
10
7
5
3
2
2
10
7
5
3
SWITCHING TIME (ns)
2
1
10
0
10
(TYPICAL)
t
d(off)
t
f
t
r
t
d(on)
23 5710
DRAIN CURRENT ID (A)
Tch = 25°C
VDD = 150V
VGS = 10V
R
GEN
= R
1
23 5710
FK20KM-6
GS
= 25Ω
2
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
20
16
12
Tch = 25°C
ID = 20A
V
DS
100V
= 50V
(V)
GS
200V
8
4
GATE-SOURCE VOLTAGE V
0
0 20406080100
g
GATE CHARGE Q
(nC)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(t°C)
(25°C)
DS (ON)
DS (ON)
10
1
7
5
VGS = 10V
ID = 1/2I
Pulse Test
(TYPICAL)
D
3
2
0
10
7
5
3
2
–1
10
0
50 100 150 200 250
DRAIN-SOURCE ON-STATE RESISTANCE r
DRAIN-SOURCE ON-STATE RESISTANCE r
CHANNEL TEMPERATURE Tch (°C)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
40
TC = 125°C
32
(A)
S
24
16
8
SOURCE CURRENT I
0
0 0.8 1.6 2.4 3.2 4.0
SOURCE-DRAIN VOLTAGE V
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
5.0
VDS = 10V
ID = 1mA
4.0
(V)
3.0
GS (th)
2.0
VOLTAGE V
1.0
GATE-SOURCE THRESHOLD
0
–50 0 50 100 150
CHANNEL TEMPERATURE Tch (°C)
VGS = 0V
Pulse Test
25°C
75°C
SD
(V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK20KM-6
HIGH-SPEED SWITCHING USE
BREAKDOWN VOLTAGE VS.
(t°C)
(25°C)
CHANNEL TEMPERATURE
(TYPICAL)
1.4
(BR) DSS
(BR) DSS
VGS = 0V
D = 1mA
I
1.2
1.0
0.8
0.6
0.4
–50 0 50 100 150
DRAIN-SOURCE BREAKDOWN VOLTAGE V
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
DIODE REVERSE VS.
SOURCE CURRENT d
is/dt CHARACTERISTIC
(TYPICAL)
10
5
3
2
trr
2
IS = 20A
GS = 0V
V
V
DD = 150V
7
5
3
2
Irr
1
REVERSE RECOVERY TIME trr (ns)
10
7
5
1
10
23 5710
Tch = 25°C
T
ch = 150°C
2
23 5710
SOURCE CURRENT CHARACTERISTIC
3
10
dis/dt = –100A
7
GS = 0V
V
5
DD = 150V
V
3
2
2
10
trr
7
5
3
2
REVERSE RECOVERY TIME trr (ns)
1
10
0
23 5710
10
SOURCE CURRENT IS (A)
TRANSIENT THERMAL IMPEDANCE
5
3
2
10
7
5
3
2
10
7
5
3
1
0
1
10
7
rr (A)
5
D=1
3
0.5
2
0
10
0.2
7
5
0.1
3
2
–1
10
7
5
3
2
–2
10
REVERSE RECOVERY CURRENT I
10
–4
23 57
0.05
0.02
0.01
Single Pulse
–3
23 57 23 57 23 57
10
DIODE REVERSE VS.
(TYPICAL)
Irr
Tch = 25°C
T
1
23 5710
CHARACTERISTICS
10
–2
10
–1
ch = 150°C
PDM
tw
T
tw
D=
10023 57
10
7
5
3
2
10
7
5
3
2
10
2
T
10123 57
2
rr (A)
1
0
REVERSE RECOVERY CURRENT I
2
10
SOURCE CURRENT dis/dt (–A/µs)
TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W)
PULSE WIDTH t
w (s)
Feb.1999
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