Mitsubishi Electric Corporation Semiconductor Group FG6000AU-120D Datasheet
MITSUBISHI GATE TURN-OFF THYRISTORS
FG6000AU-120D
HIGH POWER INVERTER USE
PRESS PACK TYPE
FG6000AU-120D
● ITQRM
● I
T(AV) Average on-state current.....................1500A
● Q
Repetitive controllable on-state current
...........6000A
RR Repetitive peak off state voltage .........6000V
OUTLINE DRAWING Dimension in mm
GATE (WHITE)
AUXILIARY CATHODE
CONNECTOR (RED)
φ 190 max
φ 130 ± 0.2
0.4 min0.4 min
35 ± 0.5
φ 130 ± 0.2
φ 190 max
φ 3.6 ± 0.2 DEPTH 2.2 ± 0.2
CATHODE
TYPE NAME
ANODE
φ 3.6 ± 0.2 DEPTH 2.2 ± 0.2
● Anode short type
APPLICATION
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
300 ± 8
MAXIMUM RATINGS
Symbol
VRRM
VRSM
VR(DC)
VDRM
VDSM
VD(DC)
+
: VGK = –2V
Symbol Parameter Conditions
I
TQRM
IT(RMS)
IT(AV)
ITSM
2
I
t
diT/dt
VFGM
VRGM
IFGM
IRGM
PFGM
PRGM
PFG(AV)
PRG(AV)
Tj
Tstg
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Repetitive controllable on-state current
RMS on-state current
Average on-state current
Surge (non-repetitive) on-state current
Current-squared, time integration
Critical rate of rise of on-state current
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate reverse current
Peak forward gate power dissipation
Peak reverse gate power dissipation
Average forward gate power dissipation
Average reverse gate power dissipation
Junction temperature
Storage temperature
Mounting force required
—
Weight
—
Parameter Unit
+
+
+
VD = 3000V, VDM = 5500V, Tj = 125°C, CS = 6.0µF, LS = 0.2µH
f = 60Hz, sine wave θ = 180°, Tf = 72°C
One half cycle at 60Hz
One cycle at 60Hz
V
D = 3000V, IGM = 90A, Tj = 125°C
Recommended value 108
Standard value
Voltage class
120D
22
22
22
6000
6000
4800
6000
3100
2000
40
6.7 × 10
500
10
22
200
2400
2000
50
140
630
–40 ~ +125
–40 ~ +150
98 ~ 118
4600
V
V
V
V
V
V
UnitRatings
A
A
A
6
kA
2
A
A/µs
V
V
A
A
W
kW
W
W
°C
°C
kN
g
s
Aug.1998
ELECTRICAL CHARACTERISTICS
Symbol Parameter Test conditions
VTM
IRRM
IDRM
IRG
dv/dt
tgt
tgq
IGQM
VGT
IGT
Rth(j-f)
On-state voltage
Repetitive peak reverse current
Repetitive peak off-state current
Reverse gate current
Critical rate of rise of off-state voltage
Turn-on time
Turn-off time
Peak gate turn-off current
Gate trigger voltage
Gate trigger current
Thermal resistance
Tj = 125°C, ITM = 6000A, Instantaneous measurment
T
j = 125°C, VRRM Applied
T
j = 125°C, VDRM Applied, VGK = –2V
T
j = 125°C, VRG = 22V
T
j = 125°C, VD = 3000V, VDM
T
j = 125°C, ITM = 6000A, IGM = 90A, VD = 3000V
Tj = 125°C, ITM = 6000A, VDM = 5500V, d
VRG = 20V, CS = 6.0µF, LS = 0.2µH
DC METHOD :V
D = 24V , RL = 0.1Ω, Tj = 25°C
Junction to fin
PERFORMANCE CURVES
MITSUBISHI GATE TURN-OFF THYRISTORS
FG6000AU-120D
HIGH POWER INVERTER USE
PRESS PACK TYPE
Limits
Min Typ
= 5500V,
VGK = –2V
iGQ/dt
= –80A/µs
—
—
—
—
1000
—
—
—
—
—
—
—
—
—
—
—
—
—30µs
1800
—
—
0.0044
—
Max
100
320
100
—
6.0
10
—
1.5
8.4
Unit
V
mA
mA
mA
V/µs
µs
A
V
A
°C/W
MAXIMUM ON-STATE CHARACTERISTIC
4
10
Tj = 125°C
7
5
3
2
3
10
7
5
3
ON-STATE CURRENT (A)
2
2
10
0246810
ON-STATE VOLTAGE (V)
GATE CHARACTERISTICS
3
10
7
5
3
2
2
10
7
5
3
VFGM = 10V
2
1
10
7
5
VGT = 1.5V
3
2
0
10
GATE VOLTAGE (V)
7
5
3
2
–1
10
–1
10
IGT = 8.4A
23 57
PFG(AV) = 140W
Tj = 25°C
0
10
IFGM = 200A
1
23 5723 57
10
PFGM = 2000W
2
10
23 57
10
RATED SURGE ON-STATE CURRENT
50
40
30
20
10
SURGE ON-STATE CURRENT (kA)
0
0
23 57 10
10
10
1
23 57
2
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM THERMAL IMPEDANCE
CHARACTERISTIC
(JUNCTION TO FIN)
0.008
0
10
210
357
1
0.007
0.006
0.005
0.004
0.003
0.002
0.001
THERMAL IMPEDANCE (°C/W)
0
3
–3
10
210
–2
357 2 10
357 2 10
–1
357
0
GATE CURRENT (mA)
TIME (s)
Aug.1998
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