Mitsubishi Electric Corporation Semiconductor Group FG2000FX-50DA Datasheet
MITSUBISHI GATE TURN-OFF THYRISTORS
FG2000FX-50DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
FG2000FX-50DA
● ITQRM
T(AV) Average on-state current.....................1050A
● I
● V
Repetitive controllable on-state current
DRM
Repetitive peak off state voltage
...........2200A
...................2500V
OUTLINE DRAWING Dimensions in mm
φ 63 ± 0.5
0.4 MIN0.4 MIN
26 ± 0.5
φ 63±0.5
φ 93 MAX
● Anode short type
APPLICATION
Inverters, D.C. choppers, Induction heaters, D.C. to D.C. converters.
GATE (WHITE)
400 ± 8
AUXILIARY CATHODE
CONNECTOR (RED)
φ 3.5 DEPTH 2.2 ± 0.2
CATHODE
TYPE NAME
ANODE
φ 3.5 DEPTH 2.2 ± 0.2
MAXIMUM RATINGS
Symbol
VRRM
VRSM
VR(DC)
VDRM
VDSM
VD(DC)
+ : VGK = –2V
Symbol Parameter Conditions Ratings
I
TQRM
IT(RMS)
IT(AV)
ITSM
2
I
t
diT/dt
VFGM
VRGM
IFGM
IRGM
PFGM
PRGM
PFG(AV)
PRG(AV)
Tj
Tstg
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Repetitive controllable on-state current
RMS on-state current
Average on-state current
Surge (non-repetitive) on-state current
Current-squared, time integration
Critical rate of rise of on-state current
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate reverse current
Peak forward gate power dissipation
Peak reverse gate power dissipation
Average forward gate power dissipation
Average reverse gate power dissipation
Junction temperature
Storage temperature
Mounting force required
—
Weight
—
Parameter
+
+
+
V
DM = 1875V, Tj = 125°C, CS = 4.0µF, LS = 0.3µH
f = 60Hz, sine wave θ = 180°, T
One half cycle at 60Hz
One cycle at 60Hz
V
D = 1250V, IGM = 30A, Tj = 125°C
Recommended value 20
Standard value
Voltage class
50DA
17
17
17
2500
2500
2000
f = 73°C
10.5 × 10
–40 ~ +125
–40 ~ +150
18 ~ 24
2200
1650
1050
16
1000
10
17
100
650
280
18
50
150
760
Unit
V
V
V
V
V
V
Unit
A
A
A
kA
5
2
A
A/µs
V
V
A
A
W
kW
W
W
°C
°C
kN
g
s
Aug.1998
ELECTRICAL CHARACTERISTICS
Symbol
VTM
IRRM
IDRM
IRG
dv/dt
tgt
tgq
IGQM
VGT
IGT
Rth(j-f)
On-state voltage
Repetitive peak reverse current
Repetitive peak off-state current
Reverse gate current
Critical rate of rise of off-state voltage
Turn-on time
Turn-off time
Peak gate turn-off current
Gate trigger voltage
Gate trigger current
Thermal resistance
Parameter Test conditions
PERFORMANCE CURVES
MITSUBISHI GATE TURN-OFF THYRISTORS
T
j = 125°C, ITM = 2000A, Instantaneous measurment
T
j = 125°C, VRRM Applied
T
j = 125°C, VDRM Applied, VGK = –2V
T
j = 125°C, VRG = 17V
T
j = 125°C, VD = 1250V, VGK = –2V
T
j = 125°C, ITM = 2200A, IGM = 30A, VD = 1250V
Tj = 125°C, ITM = 2200A, VDM = 1875V, d
VRG = 17V, CS = 4.0µF, LS = 0.3µH
DC METHOD : V
D = 24V, RL = 0.1Ω, Tj = 25°C
Junction to fin
iGQ/dt
= –30A/µs
FG2000FX-50DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
Limits
Min Typ Max
—
—
—
—
1000
—
—
—
—
—
—
—
—
—
—
—
—
—30µs
610
—
—
—
2500
0.017
Unit
V
2.4
mA
50
mA
50
mA
50
V/µs
—
µs
10
A
—
V
1.5
mA
°C/W
MAXIMUM ON-STATE CHARACTERISTIC
4
10
7
Tj = 125°C
5
3
2
3
10
7
5
3
2
2
10
7
5
ON-STATE CURRENT (A)
3
2
1
10
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
ON-STATE VOLTAGE (V)
GATE CHARACTERISTICS
2
10
7
5
3
V
FGM
2
1
10
7
5
3
2
0
10
7
GATE VOLTAGE (V)
5
3
2
–1
10
= 10V
P
FG(AV)
= 50W
VGT = 1.5V
Tj = 25°C
IGT = 2500mA
2
2310
5710323 5710423 5710
I
FGM
P
FGM
= 280W
= 100A
RATED SURGE ON-STATE CURRENT
20
16
12
8
4
SURGE ON-STATE CURRENT (kA)
0
10023 5710
1
23 5710
2
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM THERMAL IMPEDANCE
CHARACTERISTIC
(JUNCTION TO FIN)
0.020
0
2310
5710
1
0.016
0.012
0.008
0.004
THERMAL IMPEDANCE (°C/W)
5
0
–3
2310
–2
5710
23 5710–123 5710
0
GATE CURRENT (mA)
TIME (S)
Aug.1998
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