Mitsubishi Electric Corporation Semiconductor Group CT60AM-18B Datasheet
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT60AM-18B
RESONANT INVERTER USE
CT60AM-18B
¡V
CES ............................................................................... 900V
¡I
C .........................................................................................60A
¡Integrated Fast Recovery Diode
OUTLINE DRAWING Dimensions in mm
5
26
20.6MIN.
0.5
q GATE
w COLLECTOR
e EMITTER
r COLLECTOR
2
4
3
q
2
1
20MAX.
φ 3.2
2
1
5.45 5.45
4.0
wr
e
6
1
2.5
3
TO-3PL
APPLICATION
Microwave ovens, electromagnetic cooking devices, rice-cookers, v oltage-resonant in v erter circuit
electric appliances.
MAXIMUM RATINGS (Tc = 25°C)
ConditionsSymbol
VCES
VGES
VGEM
IC
ICM
IE
PC
Tj
Tstg
Parameter Ratings
Collector-emitter voltage
Gate-emitter voltage
Peak gate-emitter voltage
Collector current
Collector current (Pulsed)
Emitter current
Maximum power dissipation
Junction temperature
Storage temperature
VGE = 0V
VCE = 0V
VCE = 0V
TC = 25°C
900
±20
±30
60
120
40
200
–40 ~ +150
–40 ~ +150
Unit
V
V
V
A
A
A
W
°C
°C
Feb.1999
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise noted)
Symbol UnitParameter Test conditions
V
(BR) CES
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
td (on)
tr
td (off)
tf
Etail
ICtail
VEC
Trr
Rth (j-c)
Rth (j-c)
Collector-emitter breakdown voltage
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Tail loss
Collector tail current
Emitter-collector voltage
Reverse recovery time
Thermal resistance (IGBT part)
Thermal resistance
IC = 1mA, VGE = 0V
VCE = 900V, VGE = 0V
VGE = ±20V, VCE = 0V
VCE = 10V, IC = 6mA
IC = 60A, VCE = 15V
VCE = 25V, VGE = 0V, f = 1MHz
IC = 60A, Resistance load,
VCC = 300V, VGE = 15V, RG = 10Ω
ICP = 60A, Tj = 125°C,
dv/dt = 200V/µs
IE = 60A, VGE = 0V
IE = 60A, di/dt = 20A/µs
Junction to case
Junction to case
CT60AM-18B
RESONANT INVERTER USE
Limits
Min. Typ. Max.
900
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
2.0
5000
125
85
0.05
0.12
0.30
0.25
0.6
6
—
0.5
—
—
—
1
±0.5
6.0
2.7
—
—
—
—
—
—
—
1.0
12
3
2
0.63
4.0
V
mA
µA
V
V
pF
pF
pF
µs
µs
µs
µs
mJ/pls
A
V
µs
°C/W
°C/W
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
200
(A)
C
160
120
80
40
COLLECTOR CURRENT I
0
012345
COLLECTOR-EMITTER VOLTAGE V
(TYPICAL)
PC = 200W
VGE = 20V
15V
10V
TC = 25°C
Pulse Test
9V
8V
7V
CE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE VS.GATE-EMITTER VOLTAGE
(TYPICAL)
5
(V)
4
CE(sat)
3
2
COLLECTOR-EMITTER
1
TC = 25°C
Pulse Test
SATURATION VOLTAGE V
0
0 4 8 12 16 20
GATE-EMITTER VOLTAGE V
IC = 120A
60A
30A
15A
GE
(V)
Feb.1999
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