Mitsubishi Electric Corporation Semiconductor Group CT35SM-8 Datasheet
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT35SM-8
STROBE FLASHER USE
CT35SM-8
¡VCES ................................................................................400V
¡I
CM ....................................................................................200A
OUTLINE DRAWING Dimensions in mm
4.5
1.5
4.4
0.6 2.8
2
1.0
5.45
q
15.9MAX.
r
φ 3.2
qwe
5.45
4
wr
e
5.0
20.0
2
4
19.5MIN.
q GATE
w COLLECTOR
e EMITTER
r COLLECTOR
TO-3P
APPLICATION
Strobe Flasher.
MAXIMUM RATINGS (Tc = 25°C)
Parameter ConditionsSymbol Ratings Unit
VCES
VGES
VGEM
ICM
Tj
Tstg
Collector-emitter voltage
Gate-emitter voltage
Peak gate-emitter voltage
Collector current (Pulsed)
Junction temperature
Storage temperature
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol UnitParameter Test conditions
V(BR)CES
ICES
IGES
VGE(th)
Collector-emitter breakdown voltage
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
VGE = 0V
VCE = 0V, See notice 4
VCE = 0V, tw = 0.5s
See figure 1
IC = 1mA, VGE = 0V
VCE = 400V, VGE = 0V
VGE = ±40V , VCE = 0V
VCE = 10V, IC = 1mA
400
±30
±40
200
–40 ~ +150
–40 ~ +150
Limits
Min. Typ. Max.
450
—
—
—
—
—
—
—
—
10
±0.1
7.0
V
V
V
A
°C
°C
V
µA
µA
V
Feb.1999
PERFORMANCE CURVES
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT35SM-8
STROBE FLASHER USE
MAXIMUM PULSE COLLECTOR CURRENT
200
(A)
CM
CM = 1000µF
160
120
80
40
0
PULSE COLLECTOR CURRENT I
GATE-EMITTER VOLTAGE V
APPLICATION EXAMPLE
IXe
MAXIMUM PULSE COLLECTOR CURRENT
2000
1600
(µF)
M
<
T
C
70°C
=
1200
800
VCM = 350V
GE
(V)
400
MAIN CAPACITOR C
50403010020
<
T
C
70°C
=
>
V
GE
28V
=
0
PULSE COLLECTOR CURRENT I
Figure 1 Figure 2
TRIGGER
SIGNAL
Vtrig
CP
240220200160140 180
(A)
M
C
Vtrig
+
V
CM
–
R
G
V
G
V
CE
IGBT GATE
VOLTAGE
Xe TUBE
CURRENT
V
Ixe
G
IGBT
RECOMMEND CONDITION
V
CM
= 330V
I
P
= 180A
C
M
= 800µF
V
GE
= 28V
MAXIMUM CONDITION
360V
200A
1000µF
Notice 1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current.
And reverse gate current during turn-off must be kept less than 1A.
(In general, it is satisfied if RG ≥ 30Ω)
Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide.
So please handle carefully not to suffer from electrostatic charge.
Notice 3. The operation life should be endured 5,000 shots under the charge current
(Ixe ≤ 200A : full luminescence condition) of main condenser (CM=1000µF).
Repetition period under full luminescence condition is over 3 seconds.
Notice 4. Total operation hours must be applied within 5,000 hours.
Feb.1999
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