Mitsubishi Electric Corporation Semiconductor Group CT30TM-8 Datasheet
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT30TM-8
STROBE FLASHER USE
CT30TM-8
¡VCES ............................................................................... 400V
¡I
CM ................................................................................... 180A
OUTLINE DRAWING Dimensions in mm
5.0
17
3.8MAX.
13.5MIN.
2.54 2.54
q
10.5MAX.
5.2
qwe
w
e
1.2
φ 3.2
1.3MAX.
0.8
q GATE
w COLLECTOR
e EMITTER
8.5
4.7MAX.
2.8
0.5 2.6
TO-220F
APPLICATION
Strobe Flasher.
MAXIMUM RATINGS (Tc = 25°C)
Parameter ConditionsSymbol Ratings Unit
VCES
VGES
VGEM
ICM
Tj
Tstg
Collector-emitter voltage
Gate-emitter voltage
Peak gate-emitter voltage
Collector current (Pulsed)
Junction temperature
Storage temperature
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol UnitParameter Test conditions
V(BR)CES
ICES
IGES
VGE(th)
Collector-emitter breakdown voltage
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
VGE = 0V
VCE = 0V, See notice 4
VCE = 0V, tw = 0.5s
See figure 1
IC = 1mA, VGE = 0V
VCE = 400V, VGE = 0V
VGE = ±40V , VCE = 0V
VCE = 10V, IC = 1mA
400
±30
±40
180
–40 ~ +150
–40 ~ +150
Limits
Min. Typ. Max.
450
—
—
—
—
—
—
—
—
10
±0.1
7.0
V
V
V
A
°C
°C
V
µA
µA
V
Feb.1999
PERFORMANCE CURVES
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT30TM-8
STROBE FLASHER USE
MAXIMUM PULSE COLLECTOR CURRENT
200
(A)
CM
160
T
C
120
80
40
0
PULSE COLLECTOR CURRENT I
GATE-EMITTER VOLTAGE V
APPLICATION EXAMPLE
IXe
MAXIMUM PULSE COLLECTOR CURRENT
<
50°C
=
CM = 1000µF
<
T
C
70°C
=
(µF)
M
2000
1600
1200
800
VCM = 350V
GE
(V)
400
MAIN CAPACITOR C
50403010020
<
T
C
70°C
=
>
V
GE
=
0
PULSE COLLECTOR CURRENT I
Figure 1 Figure 2
TRIGGER
SIGNAL
Vtrig
28V
CP
220200180140120 160
(A)
C
M
Vtrig
+
V
CM
–
R
G
V
G
CE
V
IGBT GATE
VOLTAGE
Xe TUBE
CURRENT
V
Ixe
G
IGBT
RECOMMEND CONDITION
CM
= 330V
V
P
= 160A
I
M
= 800µF
C
GE
= 28V
V
MAXIMUM CONDITION
360V
180A
1000µF
Notice 1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current.
And reverse gate current during turn-off must be kept less than 1A.
(In general, it is satisfied if RG ≥ 30Ω)
Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide.
So please handle carefully not to suffer from electrostatic charge.
Notice 3. The operation life should be endured 5,000 shots under the charge current
(Ixe ≤ 180A : full luminescence condition) of main condenser (CM=1000µF).
Repetition period under full luminescence condition is over 3 seconds.
Notice 4. Total operation hours must be applied within 5,000 hours.
Feb.1999
Loading...