Mitsubishi Electric Corporation Semiconductor Group CT25ASJ-8 Datasheet
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT25ASJ-8
STROBE FLASHER USE
CT25ASJ-8
¡VCES ................................................................................400V
¡I
CM ....................................................................................150A
¡Drive V oltage V
GE=4V
¡Small Package MP-3
OUTLINE DRAWING Dimensions in mm
0.9MAX.
2.3
q
5.0 ± 0.2
4
1.0MAX.
2.3
1
6.5
10MAX.
5.5 ± 0.2
1.0
2.3MIN. 1.5 ± 0.2
2.3
2
3
wr
q GATE
w COLLECTOR
e EMITTER
r COLLECTOR
e
0.5 ± 0.1
0.5 ± 0.2
0.8
MP-3
APPLICATION
Strobe Flasher.
MAXIMUM RATINGS (Tc = 25°C)
Parameter ConditionsSymbol Ratings Unit
VCES
VGES
VGEM
ICM
Tj
Tstg
Collector-emitter voltage
Gate-emitter voltage
Peak gate-emitter voltage
Collector current (Pulsed)
Junction temperature
Storage temperature
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol UnitParameter Test conditions
V(BR)CES
ICES
IGES
VGE(th)
Collector-emitter breakdown voltage
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
VGE = 0V
See figure 1
IC = 1mA, VGE = 0V
VCE = 400V, VGE = 0V
VGE = ±6V , VCE = 0V
VCE = 10V, IC = 1mA
400
±6
±8
150
–40 ~ +150
–40 ~ +150
Limits
Min. Typ. Max.
450
—
—
—
—
—
—
—
—
10
±0.1
1.5
V
V
V
A
°C
°C
V
µA
µA
V
Feb.1999
PERFORMANCE CURVES
MAXIMUM PULSE COLLECTOR CURRENT
160
(A)
CM
CM = 400µF
120
80
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT25ASJ-8
STROBE FLASHER USE
40
0
PULSE COLLECTOR CURRENT I
02468
GATE-EMITTER VOLTAGE V
APPLICATION EXAMPLE
IXe
R
G
V
G
IGBT
V
CE
Figure 1
Vtrig
TC ≤ 70°C
20µH
GE
(V)
TRIGGER
SIGNAL
M
C
+
V
CM
–
IGBT GATE
VOLTAGE
Xe TUBE
CURRENT
Vtrig
V
Ixe
G
RECOMMEND CONDITION
V
CM
= 330V
I
CP
= 130A
C
M
= 330µF
V
GE
= 5V
Notice 1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current.
Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide.
Notice 3. The operation life should be endured 5,000 shots under the charge current
Notice 4. Total operation hours must be applied within 5,000 hours.
And reverse gate current during turn-off must be kept less than 0.1A.
(In general, it is satisfied if RG ≥ 30Ω)
So please handle carefully not to suffer from electrostatic charge.
(Ixe ≤ 150A : full luminescence condition) of main condenser (CM=400µF).
Repetition period under full luminescence condition is over 3 seconds.
MAXIMUM CONDITION
350V
150A
400µF
Feb.1999
Loading...