Mitsubishi Electric Corporation Semiconductor Group CT20VS-8 Datasheet
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT20VS-8
STROBE FLASHER USE
CT20VS-8
¡VCES ............................................................................... 400V
¡I
CM ................................................................................... 130A
OUTLINE DRAWING Dimensions in mm
+0.3
–0.5
3.0
10.5MAX.
1
qwe
5
wr
e
1.5MAX.
0.8
2.6 ± 0.4
q GATE
w COLLECTOR
e EMITTER
r COLLECTOR
1.5MAX.
8.6 ± 0.3
r
q
9.8 ± 0.5
4.5
4.5
0.5
1.3
+0.3
0
–0
TO-220S
(1.5)
APPLICATION
Strobe Flasher.
MAXIMUM RATINGS (Tc = 25°C)
Parameter ConditionsSymbol Ratings Unit
VCES
VGES
VGEM
ICM
Tj
Tstg
Collector-emitter voltage
Gate-emitter voltage
Peak gate-emitter voltage
Collector current (Pulsed)
Junction temperature
Storage temperature
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol UnitParameter Test conditions
V(BR)CES
ICES
IGES
VGE(th)
Collector-emitter breakdown voltage
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
VGE = 0V
VCE = 0V, See notice 4
VCE = 0V, tw = 0.5s
See figure 1
IC = 1mA, VGE = 0V
VCE = 400V, VGE = 0V
VGE = ±40V , VCE = 0V
VCE = 10V, IC = 1mA
400
±30
±40
130
–40 ~ +150
–40 ~ +150
Limits
Min. Typ. Max.
450
—
—
—
—
—
—
—
—
10
±0.1
7.0
V
V
V
A
°C
°C
V
µA
µA
V
Feb.1999
PERFORMANCE CURVES
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT20VS-8
STROBE FLASHER USE
MAXIMUM PULSE COLLECTOR CURRENT
200
160
120
80
40
0
PULSE COLLECTOR CURRENT ICM (A)
GATE-EMITTER VOLTAGE V
APPLICATION EXAMPLE
IXe
MAXIMUM PULSE COLLECTOR CURRENT
2000
1600
1200
800
VCM = 350V
400
MAIN CAPACITOR CM (µF)
<
TC = 70°C
>
VGE = 28V
0
PULSE COLLECTOR CURRENT I
<
TC = 50°C
<
TC = 70°C
CM = 800µF
50403010020
GE (V)
Figure 1 Figure 2
TRIGGER
SIGNAL
Vtrig
1601401208060 100
CP (A)
C
M
Vtrig
+
VCM
–
RG
VG
RECOMMEND CONDITION
CM = 330V
V
P = 120A
I
M = 700µF
C
GE = 28V
V
Notice 1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current.
Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide.
Notice 3. The operation life should be endured 5,000 shots under the charge current
Notice 4. Total operation hours must be applied within 5,000 hours.
And reverse gate current during turn-off must be kept less than 1A.
(In general, it is satisfied if RG ≥ 30Ω)
So please handle carefully not to suffer from electrostatic charge.
(Ixe ≤ 130A : full luminescence condition) of main condenser (CM=800µF).
Repetition period under full luminescence condition is over 3 seconds.
IGBT
CE
V
MAXIMUM CONDITION
360V
130A
800µF
IGBT GATE
VOLTAGE
Xe TUBE
CURRENT
V
Ixe
G
Feb.1999
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