Mitsubishi Electric Corporation Semiconductor Group CM200DY-12H Datasheet

MITSUBISHI IGBT MODULES

CM200DY-12H

HIGH POWER SWITCHING USE

INSULATED TYPE

A

H

C2E1

B

EE

H

S

C1E2

C

C2E1

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 3.70 94.0
B 3.150±0.01 80.0±0.25
C 1.89 48.0
D 1.18 Max. 30.0 Max.
E 0.90 23.0
F 0.83 21.2
G 0.71 18.0
H 0.67 17.0

J 0.63 16.0

K

P - DIA. (2 TYP.)

J

D

Q

G1 E1 E2 G2

L

R - M5 THD (3 TYP.)

JJ

N

N

M

E2

Dimensions Inches Millimeters

K 0.51 13.0
L 0.47 12.0
M 0.30 7.5
N 0.28 7.0
P 0.256 Dia. Dia. 6.5
Q 0.31 8.0
R M5 Metric M5
S 0.16 4.0

G

S

TAB#110 t=0.5

F

G2
E2

C1

E1
G1

Description:

Mitsubishi IGBT Modules are de­signed for use in switching applica­tions. Each module consists of two
IGBTs in a half-bridge configuration
with each transistor having a re­verse-connected super-fast recov­ery free-wheel diode. All compo­nents and interconnects are iso­lated from the heat sinking base­plate, offering simplified system as­sembly and thermal management.

Features:

u Low Drive Power
u Low V

CE(sat)

u Discrete Super-Fast Recovery

Free-Wheel Diode

u High Frequency Operation
u Isolated Baseplate for Easy

Heat Sinking

Applications:

u AC Motor Control
u Motion/Servo Control
u UPS
u Welding Power Supplies

Ordering Information:

Example: Select the complete part
module number you desire from
the table below -i.e. CM200DY-12H
is a 600V (V

), 200 Ampere

CES

Dual IGBT Module.

Type Current Rating V

Amperes Volts (x 50)

CM 200 12

CES

Sep.1998

MITSUBISHI IGBT MODULES

CM200DY-12H

HIGH POWER SWITCHING USE

INSULATED TYPE

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM200DY-12H Units
Junction Temperature T
Storage T emperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (TC = 25°C) I
Peak Collector Current I
Emitter Current** (TC = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) P

j

stg
CES
GES

C
CM

E

EM

c

Mounting Torque, M5 Main Terminal – 1.47 ~ 1.96 N · m
Mounting Torque, M6 Mounting – 1.96 ~ 2.94 N · m
Weight – 270 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

j(max)

iso

rating.

–40 to 150 °C
–40 to 125 °C

600 Volts
±20 Volts
200 Amperes

400* Amperes

200 Amperes

400* Amperes

780 Watts

2500 Vrms

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V

CES
GES

GE(th)

CE(sat)

VCE = V
VGE = V

, VGE = 0V – – 1.0 mA

CES

, VCE = 0V – – 0.5 µA

GES

IC = 20mA, VCE = 10V 4.5 6.0 7.5 Volts
IC = 200A, VGE = 15V – 2.1 2.8** Volts

IC = 200A, VGE = 15V, Tj = 150°C – 2.15 – Volts
Total Gate Charge Q
Emitter-Collector Voltage V

** Pulse width and repetition rate should be such that device junction temperature rise is negligible.

G

EC

VCC = 300V, IC = 200A, VGE = 15V – 600 – nC

IE = 200A, VGE = 0V – – 2.8 Volts

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
Load Rise Time t
Switching Turn-off Delay Time t
Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q

ies
oes
res

d(on)

r

d(off)

f

rr

rr

VGE = 0V, VCE = 10V – – 7 nF

V

= 300V, IC = 200A, – – 550 ns

CC

V

= V

GE1

= 15V, RG = 3.1Ω – – 300 ns

GE2

IE = 200A, diE/dt = –400A/µs – – 110 ns
IE = 200A, diE/dt = –400A/µs – 0.54 – µC

–– 20nF

– – 4 nF
– – 200 ns

– – 300 ns

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R

th(j-c)
th(j-c)
th(c-f)

Per Module, Thermal Grease Applied – – 0.065 °C/W

Per IGBT – – 0.16 °C/W
Per FWDi – – 0.35 °C/W

Sep.1998