CM150RX-12A
MITSUBISHI IGBT MODULES
CM150RX-12A
HIGH POWER SWITCHING USE
¡IC ...................................................................150A
CES ............................................................ 600V
¡V
¡7pack (3-phase Inverter + Brake)
¡Flatbase Type / Insulated Package /
Copper (non-plating) base plate
¡RoHS Directive compliant
APPLICATION
General purpose Inverters, Servo Amplifiers
OUTLINE DRAWING & CIRCUIT DIAGRAM
φ4.3
φ2.5
φ2.1
1.5
12.5
SECTION A
17
13
(3) (5.4)
12.5
(SCREWING DEPTH)
+1
17
-0.5
P(35)
B(4)
GB(6)
EB(5)
N(36)
GuP(34)
EuP(33)
GuN(30)
EuN(29)
22
39
14
13.64
(20.5)
(21.14)
6.5
126617
12
17
(21.14)
6.5
GvP(26)
EvP(25)
U(1)
GvN(22)
EvN(21)
CIRCUIT DIAGRAM
0
15
18.8
＊
(7.75)
＊
34
33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13
35
36
12 43
12 17
13.5 20.71 22.86 22.86 22.86
GwP(18)
EwP(17)
V(2)
GwN(14)
EwN(13)
LABEL
49.28
45.48
34.04
30.24
＊
＊
＊
＊
136.9
121.7
110
99
94.5
8.5
6
TH1(11)
NTC
TH2(10)
W(3)
±0.5
64.52
60.72
＊
＊
0.8
79.76
75.96
＊
＊
91.2
＊
95
＊
(102.25)
(110)
114.06
＊
3.5
4-φ5.5 MOUNTING HOLES
12
11
10
9
±0.5
8
39
7
6
5
57.5
50
A
6-M5 NUTS
Toleranceotherwisespecified
Division of Dimension
0.5 to 3
over 3 to 6
over 6 to 30
over 30 to 120
over 120 to 400
62
77.1
＊Pin positions
with tolerance
Dimensions in mm
1.15
0.65
(3.81)
1.2
TERMINAL t = 0.8
0.8
＊
54.2
(50)
＊
34.52
＊
30.72
＊
15.48
＊
11.66
0
φ0.5
Tolerance
±0.2
±0.3
±0.5
±0.8
±1.2
(7.4)
(20.5)
7
Jan. 2009
MITSUBISHI IGBT MODULES
CM150RX-12A
HIGH POWER SWITCHING USE
ABSOLUTE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
INVERTER PART
Symbol Parameter Conditions Rating Unit
CES
V
V
GES
I
C
I
CRM
P
C
I
E (Note.3)
I
ERM(Note.3)
Collector-emitter voltage
Gate-emitter voltage
Collector current
Maximum collector dissipation
Emitter current
(Free wheeling diode forward current)
BRAKE PART
Symbol Parameter Conditions
CES
V
V
GES
I
C
I
CRM
P
C
V
RRM(Note.3)
I
F (Note.3)
I
FRM(Note.3)
Collector-emitter voltage
Gate-emitter voltage
Collector current
Maximum collector dissipation
Repetitive peak reverse voltage
Forward current
G-E Short
C-E Short
DC, T
C
= 63°C
Pulse
T
C
= 25°C
T
C
= 25°C
Pulse
G-E Short
C-E Short
DC, T
C
= 70°C
Pulse
T
C
= 25°C
C
= 25°C
T
Pulse
(Note. 1)
(Note. 4)
(Note. 1, 5)
(Note. 1)
(Note. 4)
(Note. 1)
(Note. 4)
(Note. 1, 5)
(Note. 1)
(Note. 4)
600
±20
150
300
520
150
300
Rating Unit
600
±20
75
150
280
600
75
150
V
A
W
A
V
A
W
V
A
MODULE
Symbol Parameter Conditions
j
T
T
stg
V
iso
Note. 8: The base plate flatness measurement points are in the following figure.
Junction temperature
Storage temperature
Isolation voltage
—
Base plate flatness
—
Torque strength
—
Torque strength
—
Weight
+
–
Heatsinkside
X
Heatsinkside
Terminals to base plate, f = 60Hz, AC 1 minute
On the centerline X, Y
Main terminals
Mounting
M5 screw
M5 screw
(Typical)
Y
–
+
+：convex
–：concave
(Note. 8)
Rating Unit
–40 ~ +150
–40 ~ +125
2500
±0 ~ +100
2.5 ~ 3.5
2.5 ~ 3.5
330
°C
Vrms
μm
N·m
g
Jan. 2009
2
MITSUBISHI IGBT MODULES
CM150RX-12A
HIGH POWER SWITCHING USE
ELECTRICAL CHARACTERISTICS (T
j
= 25°C, unless otherwise specified)
INVERTER PART
Symbol Parameter Conditions
I
CES
V
GE(th)
I
GES
V
CE(sat)
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
t
rr (Note.3)
Q
rr (Note.3)
V
EC(Note.3)
R
th(j-c)Q
R
th(j-c)R
R
Gint
R
G
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Collector-emitter saturation
voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Thermal resistance
(Junction to case)
(Note. 1)
Internal gate resistance
External gate resistance
V
CE
= V
CES
, VGE = 0V
I
C
= 15mA, VCE = 10V
±V
GE
= V
GES
, VCE = 0V
I
C
= 150A, VGE = 15V
C
= 150A, VGE = 15V
I
V
CE
= 10V
V
GE
= 0V
CC
= 300V, IC = 150A, VGE = 15V
V
V
CC
= 300V, IC = 150A
V
GE
= ±15V, RG = 6.2Ω
Inductive load
(I
E
= 150A)
E
= 150A, VGE = 0V
I
E
= 150A, VGE = 0V
I
per IGBT
per free wheeling diode
T
C
= 25°C, per switch
(Note. 6)
(Note. 6)
T
j
= 25°C
T
j
= 125°C
Chip
T
j
= 25°C
T
j
= 125°C
Chip
(Note. 6)
Limits
Min. Typ. Max.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.1
—
5
6
—
1.7
1.9
1.6
—
—
—
300
—
—
—
—
—
5
2.0
1.95
1.9
—
—
0
—
1
7
0.5
2.1
—
—
18
2
0.6
—
120
100
350
600
200
—
2.8
—
—
0.24
0.46
—
41
Unit
mA
V
μA
V
nF
nC
ns
μC
V
K/W
Ω
BRAKE PART
Symbol Parameter Conditions
I
CES
VGE(th)
IGES
VCE(sat)
Cies
Coes
Cres
QG
I
RRM(Note.3)
VFM(Note.3)
Rth(j-c)Q
Rth(j-c)R
RGint
RG
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Collector-emitter saturation
voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Repetitive peak reverse current
Forward voltage drop
Thermal resistance
(Junction to case)
(Note. 1)
Internal gate resistance
External gate resistance
V
CE = VCES, VGE = 0V
I
C = 7.5mA, VCE = 10V
±V
GE = VGES, VCE = 0V
I
C = 75A, VGE = 15V
C = 75A, VGE = 15V
I
V
CE = 10V
V
GE = 0V
CC = 300V, IC = 75A, VGE = 15V
V
V
R = VRRM
IF = 75A
F = 75A
I
per IGBT
per Clamp diode
T
C = 25°C
(Note. 6)
(Note. 6)
T
j = 25°C
T
j = 125°C
Chip
T
j = 25°C
T
j = 125°C
Chip
(Note. 6)
Limits
Min. Typ. Max.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
8.0
—
5
6
—
1.7
1.9
1.6
—
—
—
200
—
2.0
1.95
1.9
—
—
0
—
1
7
0.5
2.1
—
—
9.3
1.0
0.3
—
1
2.8
—
—
0.44
0.85
—
83
Unit
mA
V
μA
V
nF
nC
mA
V
K/W
Ω
Jan. 2009
3
MITSUBISHI IGBT MODULES
CM150RX-12A
HIGH POWER SWITCHING USE
NTC THERMISTOR PART
—
—
—
Limits
5.00
—
3375
—
Limits
0.015 —
Symbol Parameter Conditions
R
ΔR/R
B
(25/50)
P
25
Zero power resistance
Deviation of resistance
B constant
Power dissipation
T
C
= 25°C
T
C
= 100°C, R
100
= 493Ω
Approximate by equation
T
C
= 25°C
(Note. 7)
Min. Typ. Max.
4.85
–7.3
MODULE
Symbol Parameter Conditions
Contact t
R
th(c-f)
Note.1: Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. (Refer to the figure of the chip location.)
2: Typical value is measured by using thermally conductive grease of λ = 0.9W/(m·K).
3: I
E, IERM, VEC, trr and Qrr represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).
F, IFRM, VF, VRRM and IRRM represent ratings and characteristics of the Clamp diode of Brake part.
I
4: Pulse width and repetition rate should be such that the device junction temperature (T
5: Junction temperature (T
6: Pulse width and repetition rate should be such as to cause negligible temperature rise.
(Refer to the figure of the test circuit for V
7:
B
(25/50)
R25: resistance at absolute temperature T
R
50
: resistance at absolute temperature T
hermal resistance
(Case to fin)
j) should not increase beyond 150°C.
25
1
R
= In( )/( )
R
50
1
T
T
25
50
(Note. 1)
Thermal grease applied
per 1 module
CE(sat) and VEC)
25
[K]; T
25
= 25 [°C]+273.15 = 298.15 [K]
50
[K]; T
50
= 50 [°C]+273.15 = 323.15 [K]
(Note. 2)
j) dose not exceed Tjmax rating.
Min. Typ. Max.
5.15
+7.8
—
10
Unit
kΩ
%
K
mW
Unit
K/W
Chip Location (Top view) Dimensions in mm (tolerance: ±1mm)
LABEL SIDE
22.6
44.8 (Di/VP)
34.1
T
V
D
V
45.3
r
P
i
P
(136.9)
55.3 (Di/VN)
55.8
T
r
V
N
D
i
V
N
(110)
(121.7)
(77.1)
(62)
(50)
20.6
26.0
29.4
35.4
23.1 (Di/UP)
0
0
35
36
33.6 (Di/UN)
34
33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13
T
r
U
P
T
r
D
i
U
N
U
P
D
i
U
N
12 43
Each mark points the center position of each chip. Tr**: IGBT, Di**: FWDi (DiBr: Clamp diode), Th: NTC thermistor
79.1 (Di/WP)
79.6
89.3
T
r
W
P
T
r
D
i
W
N
W
P
D
i
W
N
89.6 (Di/WN)
96.4
97.8
99.7
D
i
B
r
T
h
T
r
B
r
0
12
11
10
17.3
26.8
9
8
7
6
41.4
5
Jan. 2009
4
MITSUBISHI IGBT MODULES
CM150RX-12A
HIGH POWER SWITCHING USE
VGE = 15V
V
GuP
EuP
VGE = 0V
GuN
EuN
P side Inverter part T
(example of U arm)
GE
= 0V(GvP-EvP, GwP-EwP, GvN-EvN,
V
GwN-EwN, GB-EB)
VGE = 0V
V
GuP
EuP
P
GE
= 0V
V
I
C
GuP
EuP
U
VGE = 15V
GuN
EuN
P
U
VGE = 15V
V
I
C
N
GB
EB
P
B
V
I
C
N
N
r
N side Inverter part T
r
r Tr
B
(example of U arm)
GE
= 0V(GvP-EvP, GwP-EwP, GvN-EvN,
V
GwN-EwN, GB-EB)
CE(sat)
test circuit
V
P
GE
= 0V
V
I
E
GuP
EuP
U
P
U
VGE = 0V(GuP-EuP, GvP-EvP, GwP-EwP,
GuN-EuN, GvN-EvN, GwN-EwN)
P
V
I
F
B
V
GE
= 0V
GuN
EuN
P side Inverter part D
(example of U arm)
GE
= 0V(GvP-EvP, GwP-EwP, GvN-EvN,
V
GwN-EwN, GB-EB)
Arm
–
V
GE
+
V
GE
R
G
0V
–
V
V
GE
GE
VGE = 0V
GuN
EuN
N
i
N side Inverter part D
(example of U arm)
GE
= 0V(GvP-EvP, GwP-EwP, GvN-EvN,
V
GwN-EwN, GB-EB)
EC/VFM
V
V
0V
0A
t
d(on)
GE
I
C
t
r
t
Load
V
CE
I
E
VCC+
C
I
Switching time test circuit and waveforms
N
test circuit
90%
0%
d(off)
90%
t
f
V
I
E
VGE = 0V
GB
EB
N
i
r Di
B
VGE = 0V(GuP-EuP, GvP-EvP, GwP-EwP,
GuN-EuN, GvN-EvN, GwN-EwN)
I
E
t
rr
10%
0A
I
rr
1/2 ✕ I
Q
rr
t
rr
= 1/2 ✕ Irr ✕ t
rr
trr, Qrr test waveform
Jan. 2009
5
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
300
V
GE
=
20V
250
(A)
C
200
150
100
50
COLLECTOR CURRENT I
0
(TYPICAL) Inverter part
15
13
Tj = 25°C
12
11
10
9
8
246813579
100
HIGH POWER SWITCHING USE
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
3.5
(V)
3
CE(sat)
2.5
2
1.5
1
COLLECTOR-EMITTER
0.5
SATURATION VOLTAGE V
0
(TYPICAL) Inverter part
V
GE
= 15V
050
100 150 200 250 300
MITSUBISHI IGBT MODULES
CM150RX-12A
Tj = 25°C
T
j
= 125°C
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL) Inverter part
10
(V)
8
CE(sat)
6
4
COLLECTOR-EMITTER
2
SATURATION VOLTAGE V
0
GATE-EMITTER VOLTAGE VGE (V)
CAPACITANCE CHARACTERISTICS
(TYPICAL) Inverter part
2
10
7
5
3
2
1
10
7
5
3
2
0
10
7
CAPACITANCE (nF)
5
3
2
V
GE
= 0V
–1
10
10
–1
2
0
10
357 2
357 2
10
1
Tj = 25°C
IC = 150A
IC = 300A
IC = 60A
C
ies
C
oes
C
res
357
10
COLLECTOR CURRENT I
C
(A)
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL) Inverter part
3
10
7
5
(A)
E
3
2
2
10
7
5
3
EMITTER CURRENT I
2
1
206 8 10 12 14 16 18
10
0 0.5 1 1.5 2 2.5 3 3.5 4
EMITTER-COLLECTOR VOLTAGE V
Tj = 25°C
T
j
= 125°C
EC
(V)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
3
10
7
5
t
d(off)
t
10
2
f
Conditions:
V
CC
= 300V
V
GE
= ±15V
R
G
= 6.2Ω
T
j
= 125°C
Inductive load
23 57
10
3
3
2
2
10
7
t
d(on)
5
3
SWITCHING TIME (ns)
2
t
r
1
10
2
10
1
23 57
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT I
C
(A)
Jan. 2009
6
MITSUBISHI IGBT MODULES
CM150RX-12A
HIGH POWER SWITCHING USE
SWITCHING CHARACTERISTICS
HALF-BRIDGE
(TYPICAL) Inverter part
3
10
7
5
3
2
tf
td(off)
2
10
7
5
td(on)
3
SWITCHING TIME (ns)
2
1
10
0
10
tr
57
10
1
GATE RESISTANCE RG (Ω)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
2
10
7
5
3
2
1
10
7
5
3
2
0
10
7
5
3
SWITCHING LOSS (mJ/pulse)
2
–1
10
10
(TYPICAL) Inverter part
Conditions:
V
CC = 300V
V
GE = ±15V
I
C, IE = 150A
T
j = 125°C
Inductive load
0
57
10
1
Conditions:
V
CC = 300V
V
GE = ±15V
I
C = 150A
T
j = 125°C
Inductive load
23 5723
Eon
Eoff
Err
23 5723
10
10
SWITCHING CHARACTERISTICS
HALF-BRIDGE
(TYPICAL) Inverter part
1
10
7
5
3
2
Eoff
Eon
Err
0
10
7
5
3
2
SWITCHING LOSS (mJ/pulse) lrr
–1
10
2
10
1
57
10
2
Conditions:
V
CC = 300V
V
GE = ±15V
R
G = 6.2Ω
T
j = 125°C
Inductive load
23 5723
10
3
COLLECTOR CURRENT IC (A)
E
EMITTER CURRENT I
(A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE WHEELING DIODE
(TYPICAL) Inverter part
3
10
Conditions:
7
V
CC = 300V
5
V
GE = ±15V
R
G = 6.2Ω
3
T
j = 25°C
2
(ns)
(A), trr
2
Inductive load
2
10
7
5
3
2
1
10
1
10
57
10
Irr
trr
2
23 5723
10
3
GATE RESISTANCE RG (Ω)
GATE CHARGE CHARACTERISTICS
(TYPICAL) Inverter part
20
IC = 150A
VCC = 200V
15
10
5
GATE-EMITTER VOLTAGE VGE (V)
0
0 100 200 300 400 500 600
GATE CHARGE QG (nC)
VCC = 300V
0
10
7
5
3
th(j–c)
2
–1
10
7
5
3
2
–2
10
7
5
NORMALIZED TRANSIENT
3
THERMAL IMPEDANCE Z
2
–3
10
10
7
EMITTER CURRENT I
E
(A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
Single pulse
T
C = 25°C
Inverter IGBT part : Per unit base = R
Inverter FWDi part : Per unit base = R
Brake IGBT part : Per unit base = R
Brake Clamp-Di part : Per unit base = R
–5
–4
10
23 57
10
–3
23 57
23 57
10
–2
23 57
10
th(j–c)
th(j–c)
th(j–c)
th(j–c)
–1
23 57
= 0.24K/W
= 0.46K/W
= 0.44K/W
= 0.85K/W
TIME (s)
10
0
23 57
1
10
Jan. 2009
MITSUBISHI IGBT MODULES
CM150RX-12A
HIGH POWER SWITCHING USE
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL) Brake part
3.5
V
GE
= 15V
3
2.5
2
1.5
1
COLLECTOR-EMITTER
0.5
SATURATION VOLTAGE VCE(sat) (V)
0
025
50 75 100 125 150
COLLECTOR CURRENT IC (A)
Tj = 25°C
T
j
= 125°C
FORWARD CHARACTERISTICS
CLAMP DIODE
(TYPICAL) Brake part
3
10
7
5
3
(A)
F
2
2
10
7
5
3
2
1
10
7
5
3
FORWARD CURRENT I
2
0
10
0 0.5 1 1.5 2 2.5 3 3.5 4
FORWARD VOLTAGE VF (V)
Tj = 25°C
T
j
= 125°C
Jan. 2009
8
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