Mitsubishi Electric Corporation Semiconductor Group CM150E3U-24H Datasheet

T

Measured

C

Point

MITSUBISHI IGBT MODULES

CM150E3U-24H

HIGH POWER SWITCHING USE

INSULATED TYPE

A
D

S(4 - Mounting
Holes)

F

B

E

CM

T

3 - M6 Nuts

C

C2E1

Outline Drawing and Circuit Diagram

Q

K K K

E2

H

QN

P

R

M

L

E2
G2

C1

G

Description:

Mitsubishi IGBT Modules are de­signed for use in switching applica­tions. Each module consists of one
IGBT having a reverse-connected
super-fast recovery free-wheel di­ode and an anode-collector con­nected super-fast recovery free­wheel diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.

Features:

u Low Drive Power
u Low V

CE(sat)

u Discrete Super-Fast Recovery

Free-Wheel Diode

u High Frequency Operation
u Isolated Baseplate for Easy

Heat Sinking

Dimensions Inches Millimeters

A 4.25 108.0
B 2.44 62.0
C 1.14 +0.04/-0.02 29 +1.0/-0.5
D 3.66±0.01 93.0±0.25
E 1.88±0.01 48.0±0.25
F 0.87 22.0
G 0.16 4.0
H 0.24 6.0
K 0.71 18.0

Dimensions Inches Millimeters

L 0.87 22.0
M 0.33 8.5
N 0.10 2.5
P 0.85 21.5
Q 0.98 25.0
R 0.11 2.8
S 0.25 Dia. 6.5 Dia.

T 0.6 15.15

Application:

u Brake

Ordering Information:

Example: Select the complete
module number you desire from the
table - i.e. CM150E3U-24H is a
1200V (V

), 150 Ampere IGBT

CES

Module.

Type Amperes Volts (x 50)

Current Rating V

CM 150 24

CES

Sep.1998

MITSUBISHI IGBT MODULES

CM150E3U-24H

HIGH POWER SWITCHING USE

INSULATED TYPE

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM150E3U-24H Units
Junction Temperature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current (Tj ≤ 150°C) I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) P

j

stg
CES
GES

C
CM

E

EM

c

Mounting Torque, M6 Main Terminal – 3.5 ~ 4.5 N · m
Mounting Torque, M6 Mounting – 3.5 ~ 4.5 N · m
Weight – 400 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

iso

-40 to 150 °C

-40 to 125 °C
1200 Volts

±20 Volts

150 Amperes

300* Amperes

150 Amperes

300* Amperes

890 Watts

2500 Vrms

rating.

j(max)

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Voltage I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V

CES
GES

GE(th)

CE(sat)

VCE = V
VGE = V

, VGE = 0V – – 1 mA

CES

, VCE = 0V – – 0.5 µA

GES

IC = 15mA, VCE = 10V 4.5 6 7.5 Volts

IC = 150A, VGE = 15V, Tj = 25°C – 2.9 3.7 Volts

IC = 150A, VGE = 15V, Tj = 125°C – 2.85 – Volts
Total Gate Charge Q
Emitter-Collector Voltage** V
Emitter-Collector Voltage V

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T

G
EC
FM

VCC = 600V, IC = 150A, VGE = 15V – 560 – nC

IE = 150A, VGE = 0V – – 3.2 Volts

IF = 150A, Clamp Diode Part – – 3.2 Volts

rating.

j(max)

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
Load Rise Time t
Switch Turn-off Delay Time t
Times Fall Time t
Diode Reverse Recovery Time** t
Diode Reverse Recovery Charge** Q
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

ies

oes

res

d(on)

r

d(off)

f

rr

rr

rr

rr

VCE = 10V, VGE = 0V – – 7.4 nF

VCC = 600V, IC = 150A, – – 200 ns

V

= V

GE1

GE2

RG = 2.1Ω, Resistive – – 300 ns

Load Switching Operation – – 350 ns
IE = 150A, diE/dt = -300A/µs – – 300 ns
IE = 150A, diE/dt = -300A/µs – 0.82 – µC
IF = 150A, Clamp Diode Part – – 300 ns

diF/dt = -300A/µs – 0.82 – µC

= 15V, – – 250 ns

––22nF

– – 4.4 nF

Sep.1998