Mitsubishi Electric Corporation Semiconductor Group CM150E3U-12H Datasheet
MITSUBISHI IGBT MODULES
CM150E3U-12H
HIGH POWER SWITCHING USE
INSULA TED TYPE
TC Measured
Point
E
CM
D
C
3-M5 Nuts
O
R
C2E1
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 3.7 94.0
B 3.15±0.01 80.0±0.25
C 1.89 48.0
D 0.94 24.0
E 0.28 7.0
F 0.67 17.0
G 0.91 23.0
H 0.91 23.0
J 0.43 11.0
L 0.16 4.0
GF
P PQ
E2
A
B
H
J
E2 C1C2E1
G2 G2
L
2 - Mounting
Holes
(6.5 Dia.)
V
U
Description:
M
N
O
TAB#110 t=0.5
S
Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one
IGBT having a reverse-connected
super-fast recovery free-wheel di-
T
ode and an anode-collector connected super-fast recovery freewheel diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
E2
G2
thermal management.
Features:
u Low Drive Power
C1
u Low V
CE(sat)
u Discrete Super-Fast Recovery
Free-Wheel Diode
u High Frequency Operation
u Isolated Baseplate for Easy
Heat Sinking
Application:
Dimensions Inches Millimeters
M 0.47 12.0
N 0.53 13.5
O 0.1 2.5
P 0.63 16.0
Q 0.98 25.0
R 1.18 +0.04/-0.02 30.0 +1.0/-0.5
S 0.3 7.5
T 0.83 21.2
U 0.16 4.0
V 0.51 13.0
u Brake
Ordering Information:
Example: Select the complete
module number you desire from the
table - i.e. CM150E3U-12H is a
600V (V
), 150 Ampere IGBT
CES
Module.
Current Rating V
Type Amperes Volts (x 50)
CM 150 12
CES
Sep.1998
MITSUBISHI IGBT MODULES
CM150E3U-12H
HIGH POWER SWITCHING USE
INSULA TED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM150E3U-12H Units
Junction T emperature T
Storage T emperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) P
j
stg
CES
GES
C
CM
E
EM
c
Mounting Torque, M5 Main Terminal – 2.5~3.5 N · m
Mounting Torque, M6 Mounting – 3.5~4.5 N · m
Weight – 310 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
iso
-40 to 150 °C
-40 to 125 °C
600 Volts
±20 Volts
150 Amperes
300* Amperes
150 Amperes
300* Amperes
600 Watts
2500 Vrms
rating.
j(max)
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Voltage I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)
VCE = V
VGE = V
, VGE = 0V – – 1 mA
CES
, VCE = 0V – – 0.5 µA
GES
IC = 15mA, VCE = 10V 4.5 6 7.5 Volts
IC = 150A, VGE = 15V, Tj = 25°C – 2.4 3.0 Volts
IC = 150A, VGE = 15V, Tj = 125°C – 2.6 – Volts
Total Gate Charge Q
Emitter-Collector Voltage** V
Emitter-Collector Voltage V
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
G
EC
FM
VCC = 300V, IC = 150A, VGE = 15V – 300 – nC
IE = 150A, VGE = 0V – – 2.6 Volts
IF = 150A, Clamp Diode Part – – 2.6 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
Load Rise Time t
Switch Turn-off Delay Time t
Times Fall Time t
Diode Reverse Recovery Time** t
Diode Reverse Recovery Charge** Q
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
ies
oes
res
d(on)
r
d(off)
f
rr
rr
rr
rr
VCE = 10V, VGE = 0V – – 7.2 nF
VCC = 300V, IC = 150A, – – 100 ns
V
= V
GE1
GE2
RG = 4.2Ω, Resistive – – 300 ns
Load Switching Operation – – 300 ns
IE = 150A, diE/dt = -300A/µs – – 160 ns
IE = 150A, diE/dt = -300A/µs – 0.36 – µC
IF = 150A, Clamp Diode Part – – 160 ns
diF/dt = -300A/µs – 0.36 – µC
= 15V, – – 350 ns
– – 13.2 nF
––2nF
Sep.1998
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