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CM150DY-24A
User Manual
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MITSUBISHI CM150DY-24A User Manual

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Page 1
CM150DY-24A
MITSUBISHI IGBT MODULES
CM150DY-24A
HIGH POWER SWITCHING USE
¡IC...................................................................150A
¡V
CES ......................................................... 1200V
¡Insulated Type ¡2-elements in a pack
APPLICATION
AC drive inverters & Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
94
232317
17
2-φ6.5 MOUNTING HOLES
C2E1
13
48
12 12 12
E2
80
±0.25
C1
E2 G2
E1G1
4184
3-M5 NUTS
20
(14)
4
+1.0
29
–0.5
16 7 16 7 16
LABEL
C2E1
21.2 7.5
E2
CIRCUIT DIAGRAM
E2 G2G1 E1
C1
Jul. 2004
Page 2
ABSOLUTE MAXIMUM RATINGS (Tj = 25°C)
Symbol Parameter
V
CES
VGES IC ICM IE ( IEM ( PC ( Tj Tstg Viso
Collector-emitter voltage Gate-emitter voltage
Collector current
Note 1
)
Emitter current
Note 1
)
Maximum collector dissipation
Note 3
)
Junction temperature Storage temperature Isolation voltage
—
Torque strength
—
Weight
—
G-E Short C-E Short DC, T
C = 81°C
Pulse (Note 2)
Pulse (Note 2)
C = 25°C
*1
T
Main terminal to base plate, AC 1 min. Main terminal M5 Mounting holes M6 Typical value
Conditions UnitRatings
*1
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol ICES V
GE(th)
IGES VCE(sat)
Cies Coes Cres QG td(on) tr td(off) tf trr ( Qrr ( VEC( Rth(j-c)Q
th(j-c)R
R
th(c-f)
R RG
1 : Tc, Tf measured point is just under the chips.
*
2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
*
Note 1. I
Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time
Note 1
)
Reverse recovery charge
Note 1
)
Emitter-collector voltage
Note 1
)
Thermal resistance Contact thermal resistance
External gate resistance
E, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (T
3. Junction temperature (T
Parameter
V
CE = VCES, VGE = 0V
I
C = 15mA, VCE = 10V
V
GE = VGES, VCE = 0V
T
j = 25°C
T
j = 125°C CE = 10V
V V
GE = 0V CC = 600V, IC = 150A, VGE = 15V
V
CC = 600V, IC = 150A
V V
GE1 = VGE2 = 15V
R
G = 2.1Ω, Inductive load switching operation
I
E = 150A
E = 150A, VGE = 0V
I IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compound Applied (1/2 module)
j) should not increase beyond 150°C.
Test conditions
I
C = 150A, VGE = 15V
*1
*1
j) does not exceed Tjmax rating.
MITSUBISHI IGBT MODULES
CM150DY-24A
HIGH POWER SWITCHING USE
1200
±20 150 300 150 300
960 –40 ~ +150 –40 ~ +125
2500
Min. Max.
—
68
— — — — — — — — — — — — — — — —
*1,*2
—
2.1
2.5 ~ 3.5
3.5 ~ 4.5 310
Limits
Typ.
—
7V
—
2.1
2.4 — — —
675
— — — — —
6.0 — — —
0.022 —
1
0.5
3.0 — 23
2
0.45 —
130 100 450 350 150
—
3.8
0.13
0.23 — 31
N • m
Unit
°C/W
V V
A
A
W
°C °C
V
g
mA
µA
V
nF
nC
ns
ns
µC
V
Ω
Jul. 2004
Page 3
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
300
V
GE
(A)
C
250
200
20V
=
(TYPICAL)
15
13
Tj = 25°C
12
MITSUBISHI IGBT MODULES
CM150DY-24A
HIGH POWER SWITCHING USE
COLLECTOR-EMITTER SATURATION
(V)
CE (sat)
VOLTAGE CHARACTERISTICS
4
V
GE
3
(TYPICAL)
= 15V
150
100
50
COLLECTOR CURRENT I
0
0 46810
2
COLLECTOR-EMITTER VOLTAGE V
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
(V)
8
CE (sat)
6
4
COLLECTOR-EMITTER
2
SATURATION VOLTAGE V
0
Tj = 25°C
IC = 300A IC = 150A
IC = 60A
11
10
CE
2
1
COLLECTOR-EMITTER
Tj = 25°C T
j
9
(V)
SATURATION VOLTAGE V
0
0 100 300200 250150
50
COLLECTOR CURRENT IC (A)
= 125°C
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
3
10
7 5
(A)
E
3 2
2
10
7 5
3
EMITTER CURRENT I
2
1
2012 146 8 10 16 18
10
012 435
(TYPICAL)
Tj = 25°C
j
= 125°C
T
GATE-EMITTER VOLTAGE V
CAPACITANCE–V CHARACTERISTICS
2
10
7 5
(nF)
3
res
2
, C
1
10
oes
7
, C
5
ies
3 2
0
10
7 5
3 2
CAPACITANCE C
10
V
GE
–1
–1
2
10
(TYPICAL)
= 0V
0
10
357 2
357 2
COLLECTOR-EMITTER VOLTAGE V
10
CE
1
GE
C
ies
C
oes
C
res
357
(V)
CE
10
(V)
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
3
10
7 5
3 2
2
10
7 5
3 2
1
10
7 5
SWITCHING TIME (ns)
3 2
0
2
10
10
1
(TYPICAL)
2
10
57
t
f
t
d(off)
t
d(on)
t
r
Conditions: V
CC
= 600V
GE
= ±15V
V
G
= 2.1Ω
R
j
= 125°C
T Inductive load
23 5723
10
3
COLLECTOR CURRENT IC (A)
Jul. 2004
Page 4
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
3
10
(A)
rr
7
(ns)
rr
5 3
2
2
10
7 5
3 2
REVERSE RECOVERY TIME t
1
10
REVERSE RECOVERY CURRENT l
1
10
(TYPICAL)
23 57
10
2
I
rr
t
rr
Conditions: V V R T Inductive load
23 57
EMITTER CURRENT I
CC
= 600V
GE
= ±15V
G
= 2.1Ω
j
= 25°C
E
(A)
10
MITSUBISHI IGBT MODULES
CM150DY-24A
HIGH POWER SWITCHING USE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
10
10
10
10
10
1
–1
7 5
3 2
–2
7 5
3 2
–3
–3
–3
10
0
10
7 5
(ratio)
3 2
th (j–c’)
–1
10
7 5
3 2
IGBT part:
–2
10
Per unit base =
7
R
5
NORMALIZED TRANSIENT
3
FWDi part:
3
Per unit base =
2
R
THERMAL IMPEDANCE Z
–3
10
–2
23 57 23 57 23 57 23 57
10
th(j–c)
= 0.13°C/W
th(j–c)
= 0.23°C/W
10
10
–1
–5
0
10
Single Pulse
C’
= 25°C
T Under the chip
–4
23 57 23 57
10
TIME (s)
SWITCHING LOSS vs.
COLLECTOR CURRENT
2
10
7 5
3 2
1
10
7 5
3 2
0
10
7 5
3
SWITCHING LOSS (mJ/pulse)
2
–1
10
1
10
(TYPICAL)
2
10
57
COLLECTOR CURRENT I
RECOVERY LOSS vs. I
(TYPICAL)
2
10
Conditions:
7
CC
= 600V
V
5
GE
= ±15V
V
G
= 2.1Ω
R
3
j
= 125°C
T
2
Inductive load C snubber at bus
1
10
7 5
3 2
RECOVERY LOSS (mJ/pulse)
0
10
10
1
57
10
2
Esw(off)
Esw(on)
Conditions:
CC
= 600V
V
GE
= ±15V
V R
G
= 2.1Ω
j
= 125°C
T Inductive load C snubber at bus
23 5723
C
(A)
E
Err
23 5723
10
10
SWITCHING LOSS vs.
GATE RESISTANCE
(TYPICAL)
2
10
7 5
3
Esw(off)
2
1
10
Esw(on)
7 5
3 2
SWITCHING LOSS (mJ/pulse)
0
10
3
10
0
GATE RESISTANCE R
57
10
Conditions:
CC
= 600V
V
GE
= ±15V
V I
C
= 150A
j
= 125°C
T Inductive load C snubber at bus
1
23 5723
G
(Ω)
10
2
RECOVERY LOSS vs.
GATE RESISTANCE
2
10
7 5
3 2
1
10
7 5
3 2
RECOVERY LOSS (mJ/pulse)
0
10
3
10
0
(TYPICAL)
1
10
57
Conditions:
CC
= 600V
V
GE
= ±15V
V
E
= 150A
I
j
= 125°C
T Inductive load C snubber at bus
Err
23 5723
10
2
EMITTER CURRENT I
E
(A)
GATE RESISTANCE R
G
(Ω)
Jul. 2004
Page 5
GATE CHARGE
CHARACTERISTICS
20
IC = 150A
(V)
GE
16
12
8
4
GATE-EMITTER VOLTAGE V
0
0
(TYPICAL)
VCC = 400V
400200 800 1000600
GATE CHARGE QG (nC)
MITSUBISHI IGBT MODULES
CM150DY-24A
HIGH POWER SWITCHING USE
VCC = 600V
Jul. 2004
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