MITSUBISHI CM150DY-12NF User Manual

CM150DY-12NF

MITSUBISHI IGBT MODULES

CM150DY-12NF

HIGH POWER SWITCHING USE

¡IC...................................................................150A

¡V

CES ............................................................600V

¡Insulated Type
¡2-elements in a pack

APPLICATION

General purpose inverters & Servo controls, etc

OUTLINE DRAWING & CIRCUIT DIAGRAM

Tc measured point (Base plate)

94

17

232317

C1

0.25

2-φ6.5 MOUNTING HOLES

C2E1

13

48

12 12 12

16 7 16 7 16

–0.5

+1.0

29

E2

80±

LABEL

E2 G2

E1G1

4184

3-M5 NUTS

TAB #110. t=0.5

21.2 7.5

C2E1

20

(14)

E2

CIRCUIT DIAGRAM

Dimensions in mm

4

E2 G2G1 E1

C1

Jul.2004

MITSUBISHI IGBT MODULES

CM150DY-12NF

HIGH POWER SWITCHING USE

MAXIMUM RATINGS

Symbol Parameter

V

CES

VGES
IC
ICM
IE (
IEM (
PC (
Tj
Tstg
Viso

Collector-emitter voltage
Gate-emitter voltage

Collector current

Note 1

)

Emitter current

Note 1

)

Maximum collector dissipation

Note 3

)

Junction temperature
Storage temperature
Isolation voltage

—

Torque strength

—

Weight

—

(Tj = 25°C)

Conditions UnitRatings
G-E Short
C-E Short

C’ =97°C

*3

DC, T
Pulse (Note 2)

Pulse (Note 2)
T

C = 25°C

Main Terminal to base plate, AC 1 min.
Main Terminal M5
Mounting holes M6
Typical value

ELECTRICAL CHARACTERISTICS (Tj = 25°C)

Symbol
ICES
V

GE(th)

IGES
VCE(sat)

Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Qrr (
VEC(
Rth(j-c)Q

th(j-c)R

R

th(c-f)

R
Rth(j-c’)Q

G

R

1 : Tc measured point is shown in page OUTLINE DRAWING.

*

2 : Typical value is measured by using Shin-etsu Silicone “G-746”.

*

3 : Tc’ measured point is just under the chips.

*

Note 1. I

Collector cutoff current
Gate-emitter threshold voltage

Gate leakage current
Collector-emitter saturation voltage

Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time

Note 1

)

Reverse recovery charge

Note 1

)

Emitter-collector voltage

Note 1

)

Thermal resistance
Contact thermal resistance

Thermal resistance
External gate resistance

If you use this value, R

E, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).

2. Pulse width and repetition rate should be such that the device junction temp. (T

3. Junction temperature (T

Parameter

V

CE = VCES, VGE = 0V

I

C = 15mA, VCE = 10V

V

GE = VGES, VCE = 0V

T

j = 25°C

T

j = 125°C

CE = 10V

V
V

GE = 0V
CC = 300V, IC = 150A, VGE = 15V

V

CC = 300V, IC = 150A

V
V

GE1 = VGE2 = 15V

R

G = 4.2Ω, Inductive load switching operation

I

E = 150A

E = 150A, VGE = 0V

I

*1

IGBT part (1/2 module)
FWDi part (1/2 module)
Case to fin, Thermal compound Applied
Tc measured point is just under the chips

th(f-a) should be measured just under the chips.

j) should not increase beyond 150°C.

Test conditions

I

C = 150A, VGE = 15V

j) does not exceed Tjmax rating.

*2

(1/2 module)

600
±20
150
300
150
300

590
–40 ~ +150
–40 ~ +125

2500

2.5 ~ 3.5

3.5 ~ 4.5
310

Limits

Min. Max.

—

—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—

4.2

Typ.

—

5 7.5

6V

—

1.7

1.7
—
—
—

600

—
—
—
—
—

2.5
—
—
—

0.07
—
—

0.5

2.2
—
23

2.8

0.9
—

120
100
300
300
150

—

2.6

0.21

0.47
—

0.16
42

1

V
V
A
A
A
A

W

°C
°C

V
N • m
N • m

g

Unit

mA

µA

V

nF
nF
nF
nC

ns
ns
ns
ns
ns

µC

V

°C/W
°C/W
°C/W

*3

°C/W

Ω

Jul.2004