CM150DX-24S
- 6th Generation NX series -
MITSUBISHI IGBT MODULES
CM150DX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
Collector current IC .............…............…
Collector-emitter voltage V
Maximum junction temperature T
●Flat base Type
●Copper base plate (non-plating)
●Tin plating pin terminals
●RoHS Directive compliant
Dual (Half-Bridge)
●UL Recognized under UL1557, File E323585
APPLICATION
AC Motor Control, Motion/Servo Control, Power supply, etc.
OUTLINE DRAWING & INTERNAL CONNECTION
...........…
CES
jmax
150
1200
...
175
Dimension in mm
A
V
°C
TERMINAL SECTION A
Tolerance otherwise specified
Division of Dimension Tolerance
0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1.2
The tolerance of size between
terminals is assumed to be ±0.4.
t=0.8
1
INTERNAL CONNECTION
G2
Es2
(38)
(39)
E2
(47)
C1
(48)
Di2
Tr2
TH1
Th
NTC
TH2
(1)
(2)
(15 )
C2E1
(24)
C2E1
Cs1
(22)
(23)
Di1
Tr1
Es1
G1
(16)
Feb. 2011
MITSUBISHI IGBT MODULES
CM150DX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified)
INVERTER PART IGBT/FWDi
Symbol Item Conditions Rating Unit
V
Collector-emitter voltage G-E short-circuited 1200 V
CES
V
Gate-emitter voltage C-E short-circuited ±20 V
GES
IC DC, TC=120 °C
I
CRM
P
Total power dissipation TC=25 °C
tot
IE
I
ERM
(Note.1)
(Note.1)
Collector current
Emitter current
Pulse, Repetitive
TC=25 °C
Pulse, Repetitive
(Note.2)
150
(Note.3)
(Note.2, 4)
(Note.2, 4)
300
1150 W
150
(Note.3)
300
A
A
MODULE
Symbol Item Conditions Rating Unit
T
Maximum junction temperature - 175
jmax
T
Maximum case temperature
Cmax
T
Operating junction temperature - -40 ~ +150
jop
T
Storage temperature - -40 ~ +125
stg
V
Isolation voltage Terminals to base plate, RMS, f=60 Hz, AC 1 min 2500 V
isol
(Note.2)
125
°C
°C
ELECTRICAL CHARACTERISTICS (Tj=25 °C, unless otherwise specified)
INVERTER PART IGBT/FWDi
Symbol Item Conditions
I
Collector-emitter cut-off current VCE=V
CES
I
Gate-emitter leakage current VGE=V
GES
V
Gate-emitter threshold voltage IC=15 mA, VCE=10 V 5.4 6.0 6.6 V
GE(th)
I
V
CEsat
(Terminal)
V
CEsat
(Chip)
C
ies
C
oes
C
res
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Input capacitance - - 15
Output capacitance - - 3.0
Reverse transfer capacitance
C
V
I
C
V
V
, G-E short-circuited - - 1 mA
CES
, C-E short-circuited - - 0.5 μA
GES
=150 A
GE
=150 A
GE
CE
(Note.5)
,
=15 V
(Note.5)
,
=15 V
=10 V, G-E short-circuited
Tj=25 °C - 1.80 2.25
Tj=125 °C - 2.00 -
=150 °C - 2.05 -
T
j
Tj=25 °C - 1.70 2.15
Tj=125 °C - 1.90 -
=150 °C - 1.95 -
T
j
Min. Typ. Max.
- - 0.25
QG Gate charge VCC=600 V, IC=150 A, VGE=15 V - 350 - nC
t
Turn-on delay time - - 800
d(on)
tr Rise time
t
Turn-off delay time - - 600
d(off)
tf Fall time
(Note.1)
VEC
(Terminal)
VEC
(Chip)
t
rr
Qrr
Emitter-collector voltage
(Note.1)
Emitter-collector voltage
(Note.1)
Reverse recovery time VCC=600 V, IE=150 A, VGE=±15 V, - - 300 ns
(Note.1)
Reverse recovery charge RG=0 Ω, Inductive load - 8.0 - μC
=600 V, IC=150 A, VGE=±15 V,
V
CC
=0 Ω, Inductive load
R
G
I
=150 A
E
G-E short-circuited
I
=150 A
E
G-E short-circuited
(Note.5)
(Note.5)
,
Tj=125 °C - 1.8 -
T
,
Tj=125 °C - 1.7 -
T
- - 200
- - 300
Tj=25 °C - 1.8 2.25
=150 °C - 1.8 -
j
Tj=25 °C - 1.7 2.15
=150 °C - 1.7 -
j
Eon Turn-on switching energy per pulse VCC=600 V, IC=IE=150 A, - 24.2 -
E
Turn-off switching energy per pulse VGE=±15 V, RG=0 Ω, Tj=150 °C, - 16.0 -
off
(Note.1)
Err
R
Reverse recovery energy per pulse Inductive load - 12.2 -
Internal lead resistance
CC'+EE'
Main terminals-chip, per switch,
=25 °C
T
C
(Note.2)
- - 1.8 mΩ
rg Internal gate resistance Per switch - 13 - Ω
Limits
Unit
V
V
nF
ns
V
V
mJ
2
Feb. 2011
MITSUBISHI IGBT MODULES
CM150DX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS (cont.; Tj=25 °C, unless otherwise specified)
NTC THERMISTOR PART
Symbol Item Conditions
R25 Zero-power resistance TC=25 °C
ΔR/R Deviation of resistance TC=100 °C, R
B
B-constant Approximate by equation
(25/50)
P25 Power dissipation TC=25 °C
(Note.2)
4.85 5.00 5.15 kΩ
=493 Ω -7.3 - +7.8 %
100
(Note.2)
- - 10 mW
(Note.6)
- 3375 - K
Min. Typ. Max.
Limits
Unit
THERMAL RESISTANCE CHARACTERISTICS
Symbol Item Conditions
R
Junction to case, per IGBT - - 0.13 K/W
th(j-c)Q
R
th(j-c)D
R
th(c-s)
Thermal resistance
Contact thermal resistance
(Note.2)
(Note.2)
Junction to case, per FWDi - - 0.23 K/W
Case to heat sink, per 1 module,
Thermal grease applied
(Note.7)
Min. Typ. Max.
- 15 - K/kW
Limits
Unit
MECHANICAL CHARACTERISTICS
Symbol Item Conditions
Mt Main terminals M 6 screw 3.5 4.0 4.5
Ms
ds Creepage distance
da Clearance
Mounting torque
Mounting to heat sink M 5 screw 2.5 3.0 3.5
Terminal to terminal 11.55 - -
Terminal to base plate 12.32 - -
Terminal to terminal 10.00 - -
Terminal to base plate 10.85 - -
Min. Typ. Max.
m Weight - - 350 - g
ec Flatness of base plate On the centerline X, Y
(Note.8)
±0 - +100 μm
Note.1: Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).
Note.2: Case temperature (T
) and heat sink temperature (Ts) are defined on the each surface (mounting side) of base plate
C
and heat sink just under the chips. Refer to the figure of chip location.
The heat sink thermal resistance should measure just under the chips.
Note.3: Pulse width and repetition rate should be such that the device junction temperature (T
Note.4: Junction temperature (T
) should not increase beyond T
j
jmax
rating.
j
Note.5: Pulse width and repetition rate should be such as to cause negligible temperature rise.
Note.6:
Refer to the figure of test circuit for V
R
25
/()
ln(B
)/(
5025
R
R
: resistance at absolute temperature T25 [K]; T25=25 [°C]+273.15=298.15 [K]
25
R
: resistance at absolute temperature T50 [K]; T50=50 [°C]+273.15=323.15 [K]
50
11
)
TT
502550
CEsat
, VEC.
Note.7: Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
Note.8: The base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure.
Y
mounting side
-:Concave
mounting side
+:Convex
-:Concave
X
Limits
) dose not exceed T
jmax
Unit
N·m
mm
mm
rating.
mounting side
+:Convex
Note.9: Japan Electronics and Information Technology Industries Association (JEITA) standards,
"EIAJ ED-4701/300: Environmental and endurance test methods for semiconductor devices (Stress test I)"
Note.10: Use the following screws when mounting the printed circuit board (PCB) on the stand offs.
"M2.6×10 or M2.6×12 self tapping screw"
The length of the screw depends on the thickness of the PCB.
3
Feb. 2011
MITSUBISHI IGBT MODULES
CM150DX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
RECOMMENDED OPERATING CONDITIONS (Ta=25 °C)
Symbol Item Conditions
VCC (DC) Supply voltage Applied across C1-E2 - 600 850 V
V
Gate (-emitter drive) voltage Applied across G1-Es1/G2-Es2 13.5 15.0 16.5 V
GEon
RG External gate resistance Per switch 0 - 30 Ω
Min. Typ. Max.
CHIP LOCATION (top view)
Limits
Dimension in mm, tolerance: ±1 mm
Unit
Tr1/Tr2: IGBT, Di1/Di2: FWDi, Th: NTC thermistor. Each mark points the center position of each chip.
4
Feb. 2011
MITSUBISHI IGBT MODULES
CM150DX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
TEST CIRCUIT AND WAVEFORMS
VGE=15 V
circuited
V
Short-
vCE
22
15
16
38
39
48
23/24
47
IC
Short-
circuited
VGE=15 V
22
15
16
38
39
48
23/24
47
V
I
C
Tr1 Tr2 Di1 Di2
V
test circuit VEC test circuit
CEsat
v
iE
GE
0 V
Load
VCE
V
+
i
C
i
CC
C
0 A
t
d(on )
+V
-V
-VGE
R
G
GE
VGE 0 V
GE
Switching characteristics test circuit and waveforms t
I
CM
VCC
iC
i
C
V
CC
Short-
circuited
V
Short-
circuited
t
r
t
d(off)
ICM
22
15
16
38
39
～
～
90 %
48
I
E
23/24
47
0
iE
t
Short-
circuited
Short-
circuited
22
15
16
38
39
Q
=0.5×Irr×t
rr
t
rr
48
23/24
47
V
I
E
rr
IE
0.5×I
t
rr
～
～
90 %
0 A
Irr
10%
t
t
f
, Qrr test waveform
rr
i
E
v
CE
0 A
IEM
v
EC
V
CC
t
0.1×I
0
CM
0.1×VCC
t
ti
IGBT Turn-on switching energy IGBT Turn-off switching energy FWDi Reverse recovery energy
Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing)
0.1×V
CC
t
i
0.02×I
CM
t0
t0 V
ti
5
Feb. 2011
MITSUBISHI IGBT MODULES
CM150DX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
INVERTER PART
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
VGE=15 V
3
Tj=125 °C
2
1
(Chip)
Tj=150 °C
Tj=25 °C
300
250
(A)
C
200
150
100
COLLECTOR CURRENT I
50
Tj=25 °C
VGE=20 V
15 V
OUTPUT CHARACTERISTICS
(TYPICAL)
13.5 V
12 V
11 V
10 V
9 V
(Chip)
3.5
(V)
2.5
CEsat
1.5
COLLECTOR-EMITTER
SATURATION VOLTAGE V
0.5
0
0246810
0
0 50 100 150 200 250 300
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
10
8
Tj=25 °C
(V)
CEsat
6
4
COLLECTOR-EMITTER
2
SATURATION VOLTAGE V
(TYPICAL)
(Chip)
1000
IC=300 A
IC=150 A
(A)
E
IC=60 A
100
EMITTER CURRENT I
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
G-E short-circuited
Tj=125 °C
Tj=150 °C
Tj=25 °C
(Chip)
0
6 8 10 12 14 16 1 8 20
10
0123
GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V)
6
Feb. 2011
MITSUBISHI IGBT MODULES
VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD
1000
100
SWITCHING TIME (ns)
SWITCHING CHARACTERISTICS
HALF-BRIDGE
(TYPICAL)
--------------- : T
=150 °C, - - - - -: Tj=125 °C
j
t
d(off)
t
d(on)
tf
tr
CM150DX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
SWITCHING CHARACTERISTICS
VCC=600 V, IC=150 A, VGE=±15 V, INDUCTIVE LOAD
1000
100
--------------- : T
SWITCHING TIME (ns)
HALF-BRIDGE
(TYPICAL)
=150 °C, - - - - -: Tj=125 °C
j
t
d(off)
t
d(on)
t
r
t
f
10
10 100 1000
10
1 10 100
COLLECTOR CURRENT IC (A) EXTERNAL GATE RESISTANCE RG (Ω)
SWITCHING ENERGY (mJ)
100
SWITCHING CHARACTERISTICS
SWITCHING CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
VCC=600 V, VGE=±15 V, RG=0 Ω,
INDUCTIVE LOAD, PER PULSE
--------------- : T
10
=150 °C, - - - - -: Tj=125 °C
j
Eon
E
off
Err
100
10
VCC=600 V, IC/IE=150 A, VGE=±15 V,
INDUCTIVE LOAD, PER PULSE
--------------- : T
SWITCHING ENERGY (mJ)
HALF-BRIDGE
(TYPICAL)
=150 °C, - - - - -: Tj=125 °C
j
E
on
E
off
E
rr
REVERSE RECOVERY ENERGY (mJ)
1
10 100 1000
COLLECTOR CURRENT IC (A)
EMITTER CURRENT I
(A)
E
7
REVERSE RECOVERY ENERGY (mJ)
1
0.1 1 10 100
EXTERNAL GATE RESISTANCE R
(Ω)
G
Feb. 2011
MITSUBISHI IGBT MODULES
100
10
1
CAPACITANCE (nF)
0.1
CAPACITANCE CHARACTERISTICS
(TYPICAL)
G-E short-circuited, Tj=25 °C
CM150DX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
REVERSE RECOVERY CHARACTERISTICS
VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD
1000
C
ies
(A)
rr
C
oes
C
res
100
(ns), I
rr
t
FREE WHEELING DIODE
(TYPICAL)
--------------- : T
=150 °C, - - - - -: Tj=125 °C
j
trr
Irr
0.01
0.1 1 10 100
10
10 100 1000
COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER CURRENT IE (A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
(MAXIMUM)
Single pulse, TC=25°C
1
0.1
20
15
(V)
GE
10
5
GATE-EMITTER VOLTAGE V
GATE CHARGE CHARACTERISTICS
(TYPICAL)
VCC=600 V, IC=150 A, Tj=25 °C
th(j-c)
0.01
0.001
0
0 100 200 300 400 500
0.00001 0.0001 0.001 0.01 0.1 1 10
NORMALIZED TRANSIENT THERMAL IMPEDANCE Z
R
th(j-c)Q
=0.13 K/W, R
th(j-c)D
=0.23 K/W
GATE CHARGE QG (nC) TIME (S)
8
Feb. 2011
MITSUBISHI IGBT MODULES
CM150DX-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
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Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of
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9
Feb. 2011
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