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CM150DX-24A
User Manual
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MITSUBISHI CM150DX-24A User Manual

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Page 1
CM150DX-24A
MITSUBISHI IGBT MODULES
CM150DX-24A
HIGH POWER SWITCHING USE
C ...................................................................150A
¡I
¡V ¡Dual
¡Flatbase Type / Insulated Package /
Copper (non-plating) base plate
¡RoHS Directive compliant
APPLICATION
General purpose Inverters, Servo Amplifiers, Power supply, etc.
OUTLINE DRAWING & CIRCUIT DIAGRAM
152 137
121.7
±0.5
110
99
94.5
＊45.48
＊41.66
LABEL
＊72.14
＊68.34
4-M6 NUTS
24
±0.5
62
39
57.5
23
22
212019181716151413121110987654321
4-φ5.5 MOUNTING HOLES
(102.25)
＊95
50
(5.4)
+1
-0.5
12.5 17
(SCREWING DEPTH)
＊58.4
22
(14) (14) (4.2)
(13.5) (13.5)
46
45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
17
12
66
12
17
6.5 (21.14)
3.5
47
48
0
0
E2(39) G2(38)
(7.75)
A
＊18.8
＊15
0.8
(20.5)
17
7
13
Dimensions in mm
1.15
(3.81)
TERMINAL t = 0.8
1.5
12.5
(3)
SECTION A
＊Pin positions
with tolerance
0.65
φ4.3
(7.4)
1.2
φ2.5 φ2.1
φ0.5
E2(47)
C1(48)
TH1(1)
Tr 2
Di2
Th
NTC
TH2(2)
CIRCUIT DIAGRAM
Tr 1
E1(16)
Di1
E1C2
(24)
E1C2
(23)
C1(22)G1(15)
Toleranceotherwisespecified
Division of Dimension
0.5 to 3
over 3 to 6
over 6 to 30
over 30 to 120
over 120 to 400
Tolerance
±0.2
±0.3
±0.5
±0.8
±1.2
Jan. 2009
Page 2
MITSUBISHI IGBT MODULES
CM150DX-24A
HIGH POWER SWITCHING USE
ABSOLUTE MAXIMUM RATINGS (T
j
= 25°C, unless otherwise specified)
INVERTER PART
Symbol Parameter Conditions Rating Unit
CES
V V
GES
I
C
I
CRM
P
C
I
E (Note.3)
I
ERM(Note.3)
T
j
T
stg
V
iso
Note. 8: The base plate flatness measurement points are in the following figure.
Collector-emitter voltage Gate-emitter voltage
Collector current
Maximum collector dissipation Emitter current (Free wheeling diode forward current) Junction temperature Storage temperature Isolation voltage
—
Base plate flatness
—
Torque strength
—
Torque strength
—
Weight
Y
+
–
X
Heatsinkside
–
G-E Short C-E Short DC, T
C
= 91°C
Pulse T
C
= 25°C
T
C
= 25°C
Pulse
Terminals to base plate, f = 60Hz, AC 1 minute On the centerilne X, Y Main terminals M6 screw Mounting M5 screw (Typical)
+：convex –：concave
(Note. 1) (Note. 4)
(Note. 1, 5)
(Note. 1) (Note. 4)
(Note. 8)
1200
±20 150 300 960 150
300 –40 ~ +150 –40 ~ +125
2500
±0 ~ +100
3.5 ~ 4.5
2.5 ~ 3.5 330
V
A
W
A
°C
Vrms
μm
N·m
g
+
Heatsinkside
Jan. 2009
2
Page 3
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) INVERTER PART
Symbol Parameter Conditions
I
CES
V
GE(th)
I
GES
V
CE(sat)
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
t
rr (Note.3)
Q
rr (Note.3)
V
EC(Note.3)
R
lead
R
th(j-c)Q
R
th(j-c)R
R
th(c-f)
R
Gint
R
G
Collector cutoff current Gate-emitter threshold voltage Gate leakage current
Collector-emitter saturation voltage
Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge
Emitter-collector voltage
Module lead resistance Thermal resistance (Junction to case)
(Note. 1) Contact thermal resistance (Case to heat sink)
(Note. 1) Internal gate resistance External gate resistance
V
CE
= V
CES
, VGE = 0V
I
C
= 15mA, VCE = 10V
±V
GE
= V
GES
, VCE = 0V
I
C
= 150A, VGE = 15V
C
= 150A, VGE = 15V
I
V
CE
= 10V
V
GE
= 0V
CC
= 600V, IC = 150A, VGE = 15V
V V
CC
= 600V, IC = 150A
V
GE
= ±15V, RG = 2.2Ω
Inductive load
E
= 150A)
(I
I
E
= 150A, VGE = 0V
I
E
= 150A, VGE = 0V Main terminals-chip, per switch per IGBT per free wheeling diode Thermal grease applied per 1 module T
C
= 25°C, per switch
(Note. 6)
(Note. 6)
T
j
= 25°C
T
j
= 125°C
Chip
T
j
= 25°C
T
j
= 125°C
Chip
MITSUBISHI IGBT MODULES
CM150DX-24A
HIGH POWER SWITCHING USE
Limits
Min. Typ. Max.
(Note. 6)
(Note. 2)
—
6 — — — — — — — — — — — — — — — — — — — —
—
—
2.0
—
7
—
2.0
2.2
1.9 — — —
675
— — — — —
6.0
2.6
2.16
2.5
1.6 — —
0.015
0
—
0.5
2.6 — — 23
2.0
0.45 —
130 100 450 600 150
—
3.4 — — —
0.13
0.23
—
— 21
Unit
mA
1 8
V
μA
V
nF
nC
ns
μC
V
mΩ
K/W
Ω
NTC THERMISTOR PART
Symbol Parameter Conditions
R ΔR/R B
(25/50)
P
25
Note.1: Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. (Refer to the figure of the chip location.)
Zero power resistance Deviation of resistance B constant Power dissipation
2: Typical value is measured by using thermally conductive grease of λ = 0.9W/(m·K).
E, IERM, VEC, trr and Qrr represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).
3: I 4: Pulse width and repetition rate should be such that the device junction temperature (T 5: Junction temperature (T 6: Pulse width and repetition rate should be such as to cause negligible temperature rise. (Refer to the figure of the test circuit for V
7:
B
(25/50)
R25: resistance at absolute temperature T
50
: resistance at absolute temperature T
R
25
R
= In( )/( )
R
50
j) should not increase beyond 150°C.
1
1
T
T
25
50
T
C
= 25°C
T
C
= 100°C, R
100
= 493Ω
Approximate by equation T
C
= 25°C
CE(sat) and VEC)
25
[K]; T
25
= 25 [°C]+273.15 = 298.15 [K]
50
[K]; T
50
= 50 [°C]+273.15 = 323.15 [K]
(Note. 7)
j) dose not exceed Tjmax rating.
Min. Typ. Max.
4.85 –7.3
Limits
5.00 —
—
3375
—
—
5.15 +7.8
— 10
Unit
kΩ
%
K
mW
Jan. 2009
3
Page 4
MITSUBISHI IGBT MODULES
CM150DX-24A
HIGH POWER SWITCHING USE
Chip Location (Top view) Dimensions in mm (tolerance: ±1mm)
(152)
(121.7)
(110)
(62)
(50)
0
17.6
28.6
37.2
0
46
45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
47
48
ir22D
T
Th
37.1
41.2
Di1
Tr1
73.7
212019181716151413121110987654321
24
23
22
LABEL SIDE
Each mark points the center position of each chip. Tr*: IGBT, Di*: FWDi, Th: NTC thermistor
0
30.0
41.2
Jan. 2009
4
Page 5
MITSUBISHI IGBT MODULES
CM150DX-24A
HIGH POWER SWITCHING USE
V
V
VGE = 15V
V
GE
= 0V
VGE = 0V
C1(C1s)
G1
E1(E1s)
GE
I
C
V
C1(C1s)
= 0V
G1
E1(E1s)
E1C2
C1
G2
E2(E2s)
E2
r
1T
T
V
CE(sat)
test circuit
VGE = 15V
G2
E2(E2s)
C1
C1(C1s)
G1
E1(E1s)
GE
I
E
V
C1(C1s)
= 0V
G1
E1(E1s)
E1C2
C1
E1C2
V
I
C
E2
r
2
C1
E1C2
0V
V
GE
= 0V
G2
E2(E2s)
E2
D
i
1
EC
test circuit
V
VGE
0V
VCC+
IC
0A
td(on) td(off)
tr
Load
VCE
IE
C
I
Arm
–
V
GE
+
V
GE
R
G
V
–
V
GE
GE
Switching time test circuit and waveforms
90%
0%
90%
tf
VGE = 0V
10%
G2
E2(E2s)
I
E
0A
Di2
t
rr, Qrr
E2
Irr
test waveform
I
E
trr
V
t
1/2 ✕ Irr
Qrr = 1/2 ✕ Irr ✕ trr
Jan. 2009
5
Page 6
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
300
V
GE
20V
250
(A)
C
200
150
100
50
COLLECTOR CURRENT I
0
(TYPICAL) Inverter part
=
15
Tj = 25°C
13
12
11
10
9
100 246813579
MITSUBISHI IGBT MODULES
HIGH POWER SWITCHING USE
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
4
(V)
3.5
CE(sat)
3
2.5
2
1.5
1
COLLECTOR-EMITTER
0.5
SATURATION VOLTAGE V
0
(TYPICAL) Inverter part
V
GE
= 15V
0
50 100 150 200 250 300
CM150DX-24A
Tj = 25°C T
j
= 125°C
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL) Inverter part
10
(V)
CE(sat)
Tj = 25°C
8
6
4
COLLECTOR-EMITTER
2
SATURATION VOLTAGE V
0
GATE-EMITTER VOLTAGE VGE (V)
CAPACITANCE CHARACTERISTICS
(TYPICAL) Inverter part
2
10
7 5
3 2
1
10
7 5
3 2
0
10
7
CAPACITANCE (nF)
5
3 2
V
GE
= 0V
–1
10
10
–1
2
0
10
357 2
357 2
10
1
IC = 300A
IC = 150A
IC = 60A
C
ies
C
oes
C
res
357
206 8 10 12 14 16 18
10
COLLECTOR CURRENT I
C
(A)
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL) Inverter part
3
10
7
5
(A)
E
3
2
2
10
7
5
3
EMITTER CURRENT I
2
1
10
040.5 1 1.5 2 2.5 3 3.5
EMITTER-COLLECTOR VOLTAGE V
Tj = 25°C T
j
= 125°C
EC
(V)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
3
10
7 5
3 2
2
10
7 5
3 2
1
10
7 5
SWITCHING TIME (ns)
3 2
0
10
2
10
1
23 57
10
2
t
f
t
d(off)
t
d(on)
t
r
Conditions: V
CC
= 600V
V
GE
= ±15V
R
G
= 2.2Ω
T
j
= 125°C
Inductive load
23 57
10
3
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT I
C
(A)
Jan. 2009
6
Page 7
MITSUBISHI IGBT MODULES
CM150DX-24A
HIGH POWER SWITCHING USE
SWITCHING CHARACTERISTICS
HALF-BRIDGE
3
10
7 5
3 2
2
10
7 5
3 2
1
10
7 5
SWITCHING TIME (ns)
3 2
0
10
10
(TYPICAL) Inverter part
t
f
t
d(off)
t
d(on)
t
r
0
57
10
1
GATE RESISTANCE R
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
2
10
7
5
3
2
1
10
7
5
3
2
SWITCHING LOSS (mJ/pulse)
0
10
10
0
57
10
1
Conditions: V
CC
= 600V
V
GE
= ±15V
I
C
= 150A
T
j
= 125°C
Inductive load
23 5723
G
(Ω)
E
on
E
off
E
rr
Conditions: V
CC
= 600V
V
GE
= ±15V
I
C
, IE = 150A
T
j
= 125°C
Inductive load
23 5723
10
10
SWITCHING CHARACTERISTICS
HALF-BRIDGE
(TYPICAL) Inverter part
2
10
Conditions:
7
V
CC
= 600V
5
V
GE
= ±15V
R
G
= 2.2Ω
3
T
j
= 125°C
2
Inductive load
1
10
7
E
off
5
3
E
rr
2
SWITCHING LOSS (mJ/pulse) l
0
10
2
10
1
57
COLLECTOR CURRENT I
EMITTER CURRENT I
10
E
on
2
23 5723
C
E
(A)
3
10
(A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE WHEELING DIODE
3
10
7 5
3 2
2
10
7
(ns)
5
rr
3 2
(A), t
rr
1
10
7 5
3 2
0
2
10
10
(TYPICAL) Inverter part
1
57
10
2
I
rr
t
rr
Conditions: V
CC
= 600V
V
GE
= ±15V
R
G
= 2.2Ω
T
j
= 25°C
Inductive load
23 5723
10
3
GATE RESISTANCE R
GATE CHARGE CHARACTERISTICS
(TYPICAL) Inverter part
20
IC = 150A
(V)
GE
VCC = 400V
15
10
5
GATE-EMITTER VOLTAGE V
0
0 200 400 600 1000800
GATE CHARGE QG (nC)
G
(Ω)
VCC = 600V
0
10
7 5
3
th(j–c)
2
–1
10
7 5
3 2
–2
10
7 5
NORMALIZED TRANSIENT
3
THERMAL IMPEDANCE Z
2
–3
10
10
7
EMITTER CURRENT I
E
(A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
Single pulse, T
C
= 25°C
Inverter IGBT part : Per unit base = R Inverter FWDi part : Per unit base = R
–5
–4
10
23 57
10
–3
23 57
23 57
10
–2
23 57
10
th(j–c) th(j–c)
–1
= 0.13K/W = 0.23K/W
23 57
TIME (s)
10
0
23 57
1
10
Jan. 2009
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