MITSUBISHI CM150DX-24A User Manual
CM150DX-24A
MITSUBISHI IGBT MODULES
CM150DX-24A
HIGH POWER SWITCHING USE
C ...................................................................150A
¡I
CES ......................................................... 1200V
¡V
¡Dual
¡Flatbase Type / Insulated Package /
Copper (non-plating) base plate
¡RoHS Directive compliant
APPLICATION
General purpose Inverters, Servo Amplifiers, Power supply, etc.
OUTLINE DRAWING & CIRCUIT DIAGRAM
152
137
121.7
±0.5
110
99
94.5
＊45.48
＊41.66
LABEL
＊72.14
＊68.34
4-M6 NUTS
24
±0.5
62
39
57.5
23
22
212019181716151413121110987654321
4-φ5.5 MOUNTING HOLES
(102.25)
＊95
50
(5.4)
+1
-0.5
12.5
17
(SCREWING DEPTH)
＊58.4
22
(14) (14) (4.2)
(13.5) (13.5)
46
45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
17
12
66
12
17
6.5
(21.14)
3.5
47
48
0
0
E2(39) G2(38)
(7.75)
A
＊18.8
＊15
0.8
(20.5)
17
7
13
Dimensions in mm
1.15
(3.81)
TERMINAL t = 0.8
1.5
12.5
(3)
SECTION A
＊Pin positions
with tolerance
0.65
φ4.3
(7.4)
1.2
φ2.5
φ2.1
φ0.5
E2(47)
C1(48)
TH1(1)
Tr 2
Di2
Th
NTC
TH2(2)
CIRCUIT DIAGRAM
Tr 1
E1(16)
Di1
E1C2
(24)
E1C2
(23)
C1(22)G1(15)
Toleranceotherwisespecified
Division of Dimension
0.5 to 3
over 3 to 6
over 6 to 30
over 30 to 120
over 120 to 400
Tolerance
±0.2
±0.3
±0.5
±0.8
±1.2
Jan. 2009
MITSUBISHI IGBT MODULES
CM150DX-24A
HIGH POWER SWITCHING USE
ABSOLUTE MAXIMUM RATINGS (T
j
= 25°C, unless otherwise specified)
INVERTER PART
Symbol Parameter Conditions Rating Unit
CES
V
V
GES
I
C
I
CRM
P
C
I
E (Note.3)
I
ERM(Note.3)
T
j
T
stg
V
iso
Note. 8: The base plate flatness measurement points are in the following figure.
Collector-emitter voltage
Gate-emitter voltage
Collector current
Maximum collector dissipation
Emitter current
(Free wheeling diode forward current)
Junction temperature
Storage temperature
Isolation voltage
—
Base plate flatness
—
Torque strength
—
Torque strength
—
Weight
Y
+
–
X
Heatsinkside
–
G-E Short
C-E Short
DC, T
C
= 91°C
Pulse
T
C
= 25°C
T
C
= 25°C
Pulse
Terminals to base plate, f = 60Hz, AC 1 minute
On the centerilne X, Y
Main terminals M6 screw
Mounting M5 screw
(Typical)
+：convex
–：concave
(Note. 1)
(Note. 4)
(Note. 1, 5)
(Note. 1)
(Note. 4)
(Note. 8)
1200
±20
150
300
960
150
300
–40 ~ +150
–40 ~ +125
2500
±0 ~ +100
3.5 ~ 4.5
2.5 ~ 3.5
330
V
A
W
A
°C
Vrms
μm
N·m
g
+
Heatsinkside
Jan. 2009
2
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
INVERTER PART
Symbol Parameter Conditions
I
CES
V
GE(th)
I
GES
V
CE(sat)
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
t
rr (Note.3)
Q
rr (Note.3)
V
EC(Note.3)
R
lead
R
th(j-c)Q
R
th(j-c)R
R
th(c-f)
R
Gint
R
G
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Module lead resistance
Thermal resistance
(Junction to case)
(Note. 1)
Contact thermal resistance
(Case to heat sink)
(Note. 1)
Internal gate resistance
External gate resistance
V
CE
= V
CES
, VGE = 0V
I
C
= 15mA, VCE = 10V
±V
GE
= V
GES
, VCE = 0V
I
C
= 150A, VGE = 15V
C
= 150A, VGE = 15V
I
V
CE
= 10V
V
GE
= 0V
CC
= 600V, IC = 150A, VGE = 15V
V
V
CC
= 600V, IC = 150A
V
GE
= ±15V, RG = 2.2Ω
Inductive load
E
= 150A)
(I
I
E
= 150A, VGE = 0V
I
E
= 150A, VGE = 0V
Main terminals-chip, per switch
per IGBT
per free wheeling diode
Thermal grease applied
per 1 module
T
C
= 25°C, per switch
(Note. 6)
(Note. 6)
T
j
= 25°C
T
j
= 125°C
Chip
T
j
= 25°C
T
j
= 125°C
Chip
MITSUBISHI IGBT MODULES
CM150DX-24A
HIGH POWER SWITCHING USE
Limits
Min. Typ. Max.
(Note. 6)
(Note. 2)
—
6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.0
—
7
—
2.0
2.2
1.9
—
—
—
675
—
—
—
—
—
6.0
2.6
2.16
2.5
1.6
—
—
0.015
0
—
0.5
2.6
—
—
23
2.0
0.45
—
130
100
450
600
150
—
3.4
—
—
—
0.13
0.23
—
—
21
Unit
mA
1
8
V
μA
V
nF
nC
ns
μC
V
mΩ
K/W
Ω
NTC THERMISTOR PART
Symbol Parameter Conditions
R
ΔR/R
B
(25/50)
P
25
Note.1: Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. (Refer to the figure of the chip location.)
Zero power resistance
Deviation of resistance
B constant
Power dissipation
2: Typical value is measured by using thermally conductive grease of λ = 0.9W/(m·K).
E, IERM, VEC, trr and Qrr represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).
3: I
4: Pulse width and repetition rate should be such that the device junction temperature (T
5: Junction temperature (T
6: Pulse width and repetition rate should be such as to cause negligible temperature rise.
(Refer to the figure of the test circuit for V
7:
B
(25/50)
R25: resistance at absolute temperature T
50
: resistance at absolute temperature T
R
25
R
= In( )/( )
R
50
j) should not increase beyond 150°C.
1
1
T
T
25
50
T
C
= 25°C
T
C
= 100°C, R
100
= 493Ω
Approximate by equation
T
C
= 25°C
CE(sat) and VEC)
25
[K]; T
25
= 25 [°C]+273.15 = 298.15 [K]
50
[K]; T
50
= 50 [°C]+273.15 = 323.15 [K]
(Note. 7)
j) dose not exceed Tjmax rating.
Min. Typ. Max.
4.85
–7.3
Limits
5.00
—
—
3375
—
—
5.15
+7.8
—
10
Unit
kΩ
%
K
mW
Jan. 2009
3
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