MITSUBISHI CM150DU-24NFH User Guide

CM150DU-24NFH

MITSUBISHI IGBT MODULES

CM150DU-24NFH

HIGH POWER SWITCHING USE

¡IC...................................................................150A

¡V

CES ......................................................... 1200V

¡Insulated Type
¡2-elements in a pack

APPLICATION

High frequency switching use (30kHz to 60kHz).
Gradient amplifier, Induction heating, power supply, etc.

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

TC measured point

94

2.5

80

±0.25

E2

25

23

C1

12 13.5

2.5

2–φ6.5
MOUNTING HOLES

114418

13

G1E1 E2G2

TAB #110. t=0.5

4

24

48

3–M5NUTS
12mm deep

7

17 23

CM

C2E1

16 16

G2E2E1G1

+1

–0.5

30

LABEL

21.2 7.5

C2E1

E2

CIRCUIT DIAGRAM

C1

Feb.2004

MAXIMUM RATINGS (Tj = 25°C)

MITSUBISHI IGBT MODULES

CM150DU-24NFH

HIGH POWER SWITCHING USE

Symbol Parameter

V

CES

VGES
IC
ICM
IE (
IEM (
PC (
PC’ (
Tj
Tstg
Viso

Collector-emitter voltage
Gate-emitter voltage

Collector current

Note 1

)

Emitter current

Note 1

)

Maximum collector dissipation

Note 3

)

Maximum collector dissipation

Note 3

)

Junction temperature
Storage temperature
Isolation voltage

—

Mounting torque

—

Weight

—

G-E Short
C-E Short
Operation (Note 2)
Pulse (Note 2)
Operation (Note 2)
Pulse (Note 2)
T

C = 25°C

T

C’ = 25°C

*4

Main Terminal to base plate, AC 1 min.
Main Terminal M5
Mounting holes M6
Typical value

Conditions UnitRatings

ELECTRICAL CHARACTERISTICS (Tj = 25°C)

Symbol

CES

I
V

GE(th)

IGES
VCE(sat)

Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Qrr (
VEC(
Rth(j-c)Q

th(j-c)R

R

th(c-f)

R
Rth(j-c’)Q

th(j-c’)R

R

G

R

1 : TC measured point is shown in page OUTLINE DRAWING.

*

2 : Typical value is measured by using Shin-etsu Silicone “G-746”.

*

3 : If you use this value, Rth(f-a) should be measured just under the chips.

*

4 : TC’ measured point is just under the chips.

*

Note 1. I

Collector cutoff current
Gate-emitter threshold voltage

Gate leakage current
Collector-emitter
saturation voltage (Note 4)
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time

Note 1

)

Reverse recovery charge

Note 1

)

Emitter-collector voltage

Note 1

)

Thermal resistance
Contact thermal resistance

Thermal resistance
External gate resistance

E, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).

2. Pulse width and repetition rate should be such that the device junction temp. (T

3. Junction temperature (T

4. No short circuit capability is designed.

Parameter

VCE = VCES, VGE = 0V

C = 15mA, VCE = 10V

I
V

GE = VGES, VCE = 0V

T

j = 25°C

T

j = 125°C
CE = 10V

V
V

GE = 0V
CC = 600V, IC = 150A, VGE = 15V

V

V

CC = 600V, IC = 150A

V

GE1 = VGE2 = 15V

R

G = 2.1Ω, Inductive load switching operation

I

E = 150A

E = 150A, VGE = 0V

I

*1

IGBT part (1/2 module)
FWDi part (1/2 module)
Case to fin, Thermal compound Applied

*4

IGBT part (1/2 module)
FWDi part (1/2 module)

j) should not increase beyond 150°C.

Test conditions

I

C = 150A, VGE = 15V

j) does not exceed Tjmax rating.

*2

(1/2 module)

1200

±20
150
300
150
300
650

960
–40 ~ +150
–40 ~ +125

2500

2.5 ~ 3.5

3.5 ~ 4.5
310

Limits

Min. Max.

—

4.5 7.5
—

—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—

2.1

Typ.

—

1

6V

—

5.0

5.0
—
—
—

680

—
—
—
—
—

7.5
—
—
—

0.07
—
—
—

0.5

6.5
—
24

2.0

0.45
—

150

80

400
150
150

—

3.5

0.19

0.35
—

0.13

0.21
21

V
V
A
A
A

A
W
W

°C
°C

V

N • m
N • m

g

Unit

mA

µA

V

nF
nF
nF
nC

ns
ns
ns
ns
ns

µC

V

°C/W
°C/W
°C/W

*3

°C/W

*3

°C/W

Ω

Feb.2004

PERFORMANCE CURVES

MITSUBISHI IGBT MODULES

CM150DU-24NFH

HIGH POWER SWITCHING USE

OUTPUT CHARACTERISTICS

300

Tj = 25°C

)

A

(

250

C

(

TYPICAL

200

150

100

50

COLLECTOR CURRENT I

0

0246810

COLLECTOR-EMITTER VOLTAGE V

COLLECTOR-EMITTER SATURATION

)

V

(

CE(sat)

VOLTAGE CHARACTERISTICS

9

V

GE

8
7

= 15V

Tj = 25°C
T

j

= 125°C

(

TYPICAL

6
5
4
3
2

COLLECTOR-EMITTER

1

SATURATION VOLTAGE V

0

0 50 100 150 200 250 300

COLLECTOR CURRENT IC (A

)

VGE=20

(V)

)

15

14

13

12

TRANSFER CHARACTERISTICS

300

V

)

A

(

C

CE

250

= 10V

(

TYPICAL

)

200

CE

11

10

9
8

(V

)

150

100

50

COLLECTOR CURRENT I

0

0510 15 20

GATE-EMITTER VOLTAGE VGE (V

Tj = 25°C

j

= 125°C

T

)

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

10

)

V

(

8

CE(sat)

6

4

COLLECTOR-EMITTER

2

SATURATION VOLTAGE V

0

61014188121620

)

GATE-EMITTER VOLTAGE VGE (V

(

TYPICAL

)

Tj = 25°C

IC = 300A

IC = 150A

IC = 60A

)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

3

10

7
5

)

A

(

E

3
2

2

10

7
5

3

EMITTER CURRENT I

2

1

10

012 435

(

TYPICAL

Tj = 125°C

)

Tj = 25°C

EMITTER-COLLECTOR VOLTAGE VEC (V

CAPACITANCE CHARACTERISTICS

2

10

)

7
5

nF

(

3

res

2

, C

1

10

oes

7

, C

5

ies

3
2

0

10

7
5

3
2

CAPACITANCE C

V

GE

–1

10

–1

10

2

)

COLLECTOR-EMITTER VOLTAGE VCE (V

(

TYPICAL

= 0V

0

10

357 2

)

1

10

357 2

C

ies

C

oes

C

res

357

10

2

)

Feb.2004

MITSUBISHI IGBT MODULES

CM150DU-24NFH

HIGH POWER SWITCHING USE

SWITCHING TIME CHARACTERISTICS

3

10

7
5

3

)

2

ns

(

2

10

7
5

3
2

1

10

7
5

SWITCHING TIME

3
2

0

10

1

10

(

TYPICAL

23 57

COLLECTOR CURRENT IC (A

TRANSIENT THERMAL

HALF-BRIDGE

IMPEDANCE CHARACTERISTICS

–3

23 57 2 3 57 2 3 57 23 57

10

0

10

7
5

3

th(j – c)

2

–1

10

7
5

3
2

–2

10

7
5

NORMALIZED TRANSIENT

3

Per unit base =

THERMAL IMPEDANCE Z

2

th(j–c)

R

–3

10

(

–2

10

= 0.19°C/W

IGBT part

2

10

–1

10

–5

23 57 2 3 57

10

TIME (s

)

t

d(off)

t

d(on)

t

f

t

r

Conditions:

CC

= 600V

V

GE

= ±15V

V
R

G

= 2.1Ω

j

= 125°C

T
Inductive load

23 57

)

0

10

Single Pulse

C

= 25°C

T

–4

10

)

REVERSE RECOVERY CHARACTERISTICS

OF FREE-WHEEL DIODE

(

3

10

)

Tj = 25°C

7

ns

(

5

rr

3
2

2

10

7
5

3
2

REVERSE RECOVERY TIME t

1

10

3

10

)

1

10

23 57

EMITTER CURRENT IE (A

TYPICAL

10

2

)

I

rr

t

rr

Conditions:

CC

= 600V

V

GE

= ±15V

V
R

G

= 2.1Ω

j

= 25°C

T
Inductive load

23 57

)

10

)

3

10

A

(

7

rr

5
3

2

2

10

7
5

3
2

1

10

REVERSE RECOVERY CURRENT I

3

TRANSIENT THERMAL

10

10

10

10

10

IMPEDANCE CHARACTERISTICS

1

–1

7
5

3
2

–2

7
5

3
2

–3

–3

NORMALIZED TRANSIENT

–3

23 57 2 3 57 2 3 57 23 57

10

0

10

7
5

3

th(j – c)

2

–1

10

7
5

3
2

–2

10

7
5

3

Per unit base =

THERMAL IMPEDANCE Z

2

R

th(j–c)

–3

10

(

FWDi part

–2

10

= 0.35°C/W

–1

10

–5

23 57 2 3 57

10

TIME (s

)

10

Single Pulse
T

C

= 25°C

10

)

10

10

10

10

10

1

–1

7
5

3
2

–2

7
5

3
2

–3

–3

0

–4

GATE CHARGE CHARACTERISTICS

20

)

IC = 150A

V

(

GE

(

TYPICAL

VCC = 400V

)

15

10

5

GATE-EMITTER VOLTAGE V

0

0 200 400 600 800 1000

GATE CHARGE QG (nC

VCC = 600V

)

Feb.2004