CM150DU-24F
MITSUBISHI IGBT MODULES
CM150DU-24F
HIGH POWER SWITCHING USE
¡IC...................................................................150A
CES ......................................................... 1200V
¡V
¡Insulated Type
¡2-elements in a pack
APPLICATION
General purpose inverters & Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
Tc measured point
G2
E2
E1
G1
C1
4
2.8
14 14 14
CM
C2E1
25 2.521.525
3-M6 NUTS
4-φ6. 5 MOUNTING HOLES
18 7 18 7 18
93
108
±0.25
E2
Dimensions in mm
RTC
6156
±0.25
48
62
C2E1
E2
RTC
G2E2
C1
E1
G1
CIRCUIT DIAGRAM
0.5 0.5
0.5
0.5
+1.0
29
–0.5
LABEL
7.5
8.5
22
4
Aug. 1999
MAXIMUM RATINGS (Tj = 25°C)
MITSUBISHI IGBT MODULES
CM150DU-24F
HIGH POWER SWITCHING USE
Symbol
CES
V
VGES
IC
ICM
IE (
IEM (
PC (
Tj
Tstg
Viso
Collector-emitter voltage
Gate-emitter voltage
Collector current
Note 1
)
Emitter current
Note 1
)
Maximum collector dissipation
Note 3
)
Junction temperature
Storage temperature
Isolation voltage
—
—
Torque strength
—
Weight
ELECTRICAL CHARACTERISTICS
Symbol
ICES
V
GE(th)
IGES
VCE(sat)
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Qrr (
VEC(
Rth(j-c)Q
th(j-c)R
R
th(c-f)
R
Rth(j-c’)Q
G
R
Note 1. IE, VEC, trr, Qrr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi).
1 : Tc measured point is indicated in OUTLINE DRAWING.
*
2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
*
3 : If you use this value, Rth(f-a) should be measured just under the chips.
*
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Note 1
)
Reverse recovery charge
Note 1
)
Emitter-collector voltage
Note 1
)
Thermal resistance
Contact thermal resistance
Thermal resistance
External gate resistance
2. Pulse width and repetition rate should be such that the device junction temp. (T
3. Junction temperature (T
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Parameter
G-E Short
C-E Short
C = 25°C
T
Pulse (Note 2)
C = 25°C
T
Pulse (Note 2)
C = 25°C
T
Main terminal to base plate, AC 1 min.
Main Terminal M6
Mounting holes M6
Typical value
(Tj = 25°C)
Parameter
VCE = VCES, VGE = 0V
C = 15mA, VCE = 10V
I
V
GE = VCES, VCE = 0V
j = 25°C
T
j = 125°C
T
V
CE = 10V
GE = 0V
V
CC = 600V, IC = 150A, VGE = 15V
V
V
CC = 600V, IC = 150A
GE1 = VGE2 = 15V
V
G = 2.1Ω, Inductive load switching operation
R
E = 150A
I
I
E = 150A, VGE = 0V
*1
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to fin, Thermal compoundapplied
Tc measured point is just under the chips
j) should not increase beyond 150°C.
Conditions UnitRatings
Test conditions
Min. Max.
—
57
—
I
C = 150A, VGE = 15V
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
*2
(1/2 module)
—
—
2.1
j) does not exceed Tjmax rating.
1200
±20
150
300
150
300
600
–40 ~ +150
–40 ~ +125
2500
3.5 ~ 4.5
3.5 ~ 4.5
400
Limits
T yp.
—
1
V
V
A
A
W
°C
°C
V
N • m
N • m
g
Unit
mA
6V
—
1.8
1.9
—
—
—
1650
—
—
—
—
—
6.0
—
—
—
0.04
—
—
20
2.4
59
2.6
1.5
150
80
450
300
150
3.2
0.21
0.24
0.13
21
µA
—
V
nF
—
nC
ns
ns
—
µC
V
°C/W
—
✽3
Ω
Aug. 1999
MITSUBISHI IGBT MODULES
CM150DU-24F
HIGH POWER SWITCHING USE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
300
Tj = 25°C
250
(A)
C
200
150
100
50
COLLECTOR CURRENT I
0
0 0.5 1 1.5 2 2.5 3 3.5 4
COLLECTOR-EMITTER VOLTAGE V
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
5
Tj = 25°C
(V)
4
CE (sat)
3
2
COLLECTOR-EMITTER
1
SATURATION VOLTAGE V
0
V
GE
(TYPICAL)
= 20V
15
11
10
(TYPICAL)
8.5
8
9.5
9
IC = 300A
IC = 150A
IC = 60A
CE
206 8 12 1610 14 18
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
3
V
GE
(V)
2.5
CE (sat)
= 15V
Tj = 25°C
j
= 125°C
T
2
1.5
1
COLLECTOR-EMITTER
0.5
SATURATION VOLTAGE V
0
0 200100 300
COLLECTOR CURRENT IC (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
3
10
Tj = 25°C
7
5
(A)
E
3
2
2
10
7
5
3
EMITTER CURRENT I
2
1
10
0.5 1 1.5 2 2.5 3 3.5
GATE-EMITTER VOLTAGE V
CAPACITANCE–V
CHARACTERISTICS
2
10
7
5
(nF)
3
res
2
, C
1
10
oes
7
, C
5
ies
3
2
0
10
7
5
3
2
CAPACITANCE C
V
GE
–1
10
–1
2
10
(TYPICAL)
= 0V
0
10
357 2
357 2
COLLECTOR-EMITTER VOLTAGE V
10
CE
1
C
ies
C
oes
C
res
GE
(V)
357
CE
10
(V)
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
23
(TYPICAL)
2
10
57
t
f
t
d(off)
t
d(on)
t
r
Conditions:
CC
= 600V
V
GE
= ±15V
V
G
= 2.1Ω
R
j
= 125°C
T
Inductive load
23 57
10
3
3
10
7
5
3
2
2
10
7
5
3
2
1
10
7
5
SWITCHING TIMES (ns)
3
2
0
2
10
10
1
COLLECTOR CURRENT IC (A)
Aug. 1999
MITSUBISHI IGBT MODULES
CM150DU-24F
HIGH POWER SWITCHING USE
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
3
10
(A)
rr
7
(ns)
rr
5
3
2
2
10
7
5
3
2
REVERSE RECOVERY TIME t
1
10
REVERSE RECOVERY CURRENT l
1
10
23 57
10
2
I
rr
t
rr
23 57
EMITTER CURRENT I
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
IC = 150A
(V)
18
GE
16
14
12
VCC = 400V
VCC = 600V
10
8
6
4
2
GATE-EMITTER VOLTAGE V
0
0 500 1500 25001000 2000
Conditions:
CC
= 600V
V
V
GE
= ±15V
R
G
= 2.1Ω
Tj = 25
°C
Inductive load
E
(A)
10
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
10
10
10
10
10
1
3
2
–1
7
5
3
2
–2
7
5
3
2
–3
–3
–3
10
1
10
7
IGBT part:
5
Per unit base = R
3
FWDi part:
(°C/W)
2
Per unit base = R
0
10
th (j–c)
7
5
3
2
–1
10
7
5
3
2
–2
10
7
NORMALIZED TRANSIENT
5
Single Pulse
3
2
T
THERMAL IMPEDANCE Z
–3
3
10
–2
23 57 23 57 23 57 23 57
10
C
= 25°C
–1
10
th(j–c)
th(j–c)
–5
10
0
10
= 0.21°C/W
= 0.24°C/W
–4
23 57 23 57
10
TMIE (s)
GATE CHARGE QG (nC)
Aug. 1999
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