Mitsubishi Electric Corporation Semiconductor Group CM150DU-12H Datasheet
MITSUBISHI IGBT MODULES
CM150DU-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
TC Measured
Point
E
CM
D
C
3-M5 Nuts
O
R
C2E1
GF
P PQ
E2
A
B
H
J
E2 C1C2E1
G1 E1 G2 G2
M
N
O
2 - Mounting
Holes
K
(6.5 Dia.)
L
TAB#110 t=0.5
S
V
U
Description:
Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two
IGBTs in a half-bridge configuration
with each transistor having a re-
T
verse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system
assembly and thermal manage-
E2
G2
ment.
Features:
u Low Drive Power
C1
u Low V
CE(sat)
u Discrete Super-Fast Recovery
E1
G1
Free-Wheel Diode
u High Frequency Operation
u Isolated Baseplate for Easy
Heat Sinking
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 3.7 94.0
B 3.15±0.01 80.0±0.25
C 1.89 48.0
D 0.94 24.0
E 0.28 7.0
F 0.67 17.0
G 0.91 23.0
H 0.91 23.0
J 0.43 11.0
K 0.71 18.0
L 0.16 4.0
Dimensions Inches Millimeters
M 0.47 12.0
N 0.53 13.5
O 0.1 2.5
P 0.63 16.0
Q 0.98 25.0
R 1.18 +0.04/-0.02 30.0 +1.0/-0.5
S 0.3 7.5
T 0.83 21.2
U 0.16 4.0
V 0.51 13.0
Applications:
u AC Motor Control
u Motion/Servo Control
u UPS
u Welding Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM150DU-12H is a
600V (V
), 150 Ampere Dual
CES
IGBT Module.
Type Amperes Volts (x 50)
Current Rating V
CM 150 12
CES
Sep.1998
MITSUBISHI IGBT MODULES
CM150DU-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM150DU-12H Units
Junction Temperature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) P
j
stg
CES
GES
C
CM
E
EM
c
Mounting Torque, M5 Main Terminal – 2.5~3.5 N · m
Mounting Torque, M6 Mounting – 3.5~4.5 N · m
Weight – 310 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
iso
-40 to 150 °C
-40 to 125 °C
600 Volts
±20 Volts
150 Amperes
300* Amperes
150 Amperes
300* Amperes
600 Watts
2500 Vrms
rating.
j(max)
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Voltage I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)
VCE = V
VGE = V
, VGE = 0V – – 1 mA
CES
, VCE = 0V – – 0.5 µA
GES
IC = 15mA, VCE = 10V 4.5 6 7.5 Volts
IC = 150A, VGE = 15V, Tj = 25°C – 2.4 3.0 Volts
IC = 150A, VGE = 15V, Tj = 125°C – 2.6 – Volts
Total Gate Charge Q
Emitter-Collector Voltage** V
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
G
EC
VCC = 300V, IC = 150A, VGE = 15V – 300 – nC
IE = 150A, VGE = 0V – – 2.6 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
Load Rise Time t
Switch Turn-off Delay Time t
Times Fall Time t
Diode Reverse Recovery Time** t
Diode Reverse Recovery Charge** Q
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
ies
oes
res
d(on)
r
d(off)
f
rr
rr
VCE = 10V, VGE = 0V – – 7.2 nF
VCC = 300V, IC = 150A, – – 100 ns
V
= V
GE1
GE2
RG = 4.2Ω, Resistive – – 300 ns
Load Switching Operation – – 300 ns
IE = 150A, diE/dt = -300A/µs – – 160 ns
IE = 150A, diE/dt = -300A/µs – 0.36 – µC
= 15V, – – 350 ns
– – 13.2 nF
––2nF
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R
Q Per IGBT 1/2 Module – – 0.21 °C/W
th(j-c)
D Per FWDi 1/2 Module – – 0.47 °C/W
th(j-c)
th(c-f)
Per Module, Thermal Grease Applied – 0.035 – °C/W
Sep.1998
Loading...