MITSUBISHI HVIGBT MODULES
CM1200HG-66H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
CM1200HG-66H
● IC ................................................................ 1200A
● V
CES ....................................................... 3300V
● High Insulated Type
● 1-element in a Pack
● AISiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
INSULA TED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
190
3 - M4 NUTS
screwing depth
min. 7.7
±0.5
57
57
±0.25
6
5
14
±0.25
E
GC
±0.3
±0.5
61.2
59.2
12
4
3
±0.3
±0.5
61.2
±0.5
57
±0.25
5 - M8 NUTS
±0.1
17
2
±0.25
±0.3
44
124
1
±0.1
9
8 - φ 7 MOUNTING HOLES
screwing depth
min. 16.5
+1.0
0
±0.15
48
5
±0.5
140
+1.0
(6)
C
C
G
E
E
(5)
CIRCUIT DIAGRAM
18
±0.3
41
±0.5
(4)
C
E
(3)
22
±0.3
(2)
C
E
(1)
LABEL
0
38
±0.3
40.4
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200HG-66H
HIGH POWER SWITCHING USE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS
Symbol Item Conditions UnitRatings
V
CES
VGES
IC
ICM
IE
IEM
PC
Tj
Top
Tstg
Viso
Qpd
tpsc
Collector-emitter voltage
Gate-emitter voltage
Collector current
(Note 2)
Emitter current
(Note 2)
Maximum power dissipation
(Note 3)
Junction temperature
Operating temperature
Storage temperature
Isolation voltage
Partial discharge
Maximum short circuit pulse
width
VGE = 0V, Tj = 25°C
V
CE = 0V, Tj = 25°C
T
C = 90°C
Pulse (Note 1)
Pulse (Note 1)
T
C = 25°C, IGBT part
RMS, sinusoidal, f = 60Hz, t = 1min.
V1 = 6900V
rms, V2 = 5100Vrms
f = 60Hz (acc. to IEC 1287)
V
CC = 2200V, VCES ≤ 3300V, VGE = 15V
T
j = 125°C
12500
–40 ~ +150
–40 ~ +125
–40 ~ +125
10200
INSULATED TYPE
3300
±20
1200
2400
1200
2400
10
10
V
V
A
A
A
A
W
°C
°C
°C
V
pC
µs
ELECTRICAL CHARACTERISTICS
Symbol
I
CES
V
GE(th)
IGES
VCE(sat)
Cies
Coes
Cres
Qg
VEC
td(on)
tr
Eon
td(off)
tf
Eoff
trr
Qrr
Erec
Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C).
Collector cut-off current
Gate-emitter
threshold voltage
Gate leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
(Note 2)
Emitter-collector voltage
Turn-on delay time
Turn-on rise time
Turn-on switching energy
Turn-off delay time
Turn-off fall time
Turn-off switching energy
(Note 2)
Reverse recovery time
(Note 2)
Reverse recovery charge
(Note 2)
Reverse recovery energy
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
3. Junction temperature (T
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Item Conditions
V
CE = VCES, VGE = 0V, Tj = 25°C
I
C = 120mA, VCE = 10V, Tj = 25°C
GE = VGES, VCE = 0V, Tj = 25°C
V
I
C = 1200A, VGE = 15V, Tj = 25°C (Note 4)
I
C = 1200A, VGE = 15V, Tj = 125°C (Note 4)
V
CE = 10V, f = 100kHz
V
GE = 0V, Tj = 25°C
CC = 1650V, IC = 1200A, VGE = 15V, Tj = 25°C
V
I
E = 1200A, VGE = 0V, Tj = 25°C (Note 4)
I
E = 1200A, VGE = 0V, Tj = 125°C (Note 4)
V
CC = 1650V, IC = 1200A, VGE = ±15V
R
G(on) = 1.6Ω, Tj = 125°C, Ls = 100nH
Inductive load
V
CC = 1650V, IC = 1200A, VGE = ±15V
R
G(off) = 1.6Ω, Tj = 125°C, Ls = 100nH
Inductive load
V
CC = 1650V, IC = 1200A, VGE = ±15V
R
G(on) = 1.6Ω, Tj = 125°C, Ls = 100nH
Inductive load
j) should not exceed Tjmax rating (150°C).
Min Typ Max
—
5.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Limits
—
6.0
—
3.30
3.60
180
18.0
5.4
8.6
2.80
2.70
—
—
1.60
—
—
1.55
—
800
0.90
15
7.0
0.5
4.20
—
—
—
—
—
3.60
—
1.60
1.00
—
2.50
1.00
—
1.40
—
—
Unit
mA
V
µA
V
nF
nF
nF
µC
V
µs
µs
J/pulse
µs
µs
J/pulse
µs
µC
J/pulse
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
THERMAL CHARACTERISTICS
Symbol
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Thermal resistance
Contact thermal resistance
MECHANICAL CHARACTERISTICS
Symbol
M
CTI
d
a
ds
LC-E(int)
RC-E(int)
Mounting torque
Mass
—
Comparative tracking index
Clearance distance in air
Creepage distance along surface
Internal inductance
Internal lead resistance
Item Conditions
Junction to Case, IGBT part
Junction to Case, FWDi part
Case to Fin, λ
Item Conditions
M8 : Main terminals screw
M6 : Mounting screw
M4 : Auxiliary terminals screw
IGBT part
T
C = 25°C
grease = 1W/m·K
MITSUBISHI HVIGBT MODULES
CM1200HG-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
Limits
Min Typ Max
—
—
—
Min Typ Max
7.0
3.0
1.0
—
600
26.0
56.0
—
—
—
—
6.0
Limits
—
—
—
1.35
—
—
—
18
0.18
10.0
20.0
15.0
—
6.0
3.0
—
—
—
—
—
—
Unit
K/kW
K/kW
K/kW
Unit
N·m
kg
—
mm
mm
nH
mΩ
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
MITSUBISHI HVIGBT MODULES
CM1200HG-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTPUT CHARACTERISTICS
2400
T
j
= 125°C
2000
)
A
(
1600
V
V
1200
800
COLLECTOR CURRENT
400
0
COLLECTOR-EMITTER VOLTAGE (V
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
6
)
V
V
GE
(
= 15V
(
TYPICAL
)
2400
2000
GE
GE
= 20V
= 15V
V
GE
= 12V
V
GE
= 10V
)
A
(
1600
1200
800
COLLECTOR CURRENT
V
GE
=8V
3421056
400
0
)
(
TYPICAL
)
6
TRANSFER CHARACTERISTICS
V
CE
= 20V
T
j
= 25°C
T
j
= 125°C
(
TYPICAL
684201012
GATE-EMITTER VOLTAGE (V
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(
TYPICAL
)
)
)
5
4
3
2
1
T
j
= 25°C
T
j
COLLECTOR-EMITTER SATURATION VOLTAGE
0
400 800 1200 16000 2000 2400
COLLECTOR CURRENT (A
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
= 125°C
)
)
5
V
(
4
3
2
1
EMITTER-COLLECTOR VOLTAGE
0
800 1200400 16000 2000 2400
EMITTER CURRENT (A
T
j
= 25°C
T
j
= 125°C
)
Jul. 2005
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HG-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
CAPACITANCE CHARACTERISTICS
3
10
VGE = 0V, Tj = 25°C
7
f = 100kHz
5
3
2
)
2
10
nF
(
7
5
3
2
1
10
CAPACITANCE
7
5
3
2
0
10
-1
23 57
10
COLLECTOR-EMITTER VOLTAGE (V
SWITCHING ENERGY CHARACTERISTICS
3
VCC = 1650V, VGE = ±15V
G(on) = RG(off) = 1.6Ω
R
Tj = 125°C, Inductive load
2.5
)
10
0
(
TYPICAL
)
23 57 23 57
10
1
HALF-BRIDGE
(
TYPICAL
)
Cies
Coes
Cres
)
Eon
10
GATE CHARGE CHARACTERISTICS
(
TYPICAL
)
20
VCC = 1650V, IC = 1200A
Tj = 25°C
16
)
V
(
12
8
GATE-EMITTER VOLTAGE
4
2
0
GATE CHARGE
963012
(µC)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(
TYPICAL
)
6
VCC = 1650V, IC = 1200A
GE = ±15V
V
Tj = 125°C, Inductive load
5
)
Eon
J/pulse
(
2
Eoff
1.5
1
SWITCHING ENERGIES
0.5
0
1200 16008004000 2000 2400
COLLECTOR CURRENT (A
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Erec
)
J/pulse
4
(
3
2
SWITCHING ENERGIES
1
0
51001520
GATE RESISTANCE
Eoff
Erec
(Ω)
Jul. 2005
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HG-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME CHARACTERISTICS
2
10
VCC = 1650V, V
7
G(on)
= R
R
5
T
j
= 125°C, Inductive load
3
2
)
µs
1
10
(
7
5
3
2
0
10
SWITCHING TIMES
7
5
3
2
-1
10
1
10
t
t
23 57
COLLECTOR CURRENT (A
HALF-BRIDGE
(
GE
G(off) =
1.6Ω
d(off)
d(on)
2
10
TYPICAL
)
= ±15V
t
r
t
f
23 57 23 57
10
3
)
10
REVERSE RECOVERY CHARACTERISTICS
2
10
VCC = 1650V, V
7
R
G(on)
5
3
)
2
µs
(
1
10
7
5
3
2
0
10
7
5
REVERSE RECOVERY TIME
3
2
-1
4
10
10
= R
j
= 125°C, Inductive load
T
1
23 57
G(off) =
I
rr
t
rr
10
(
TYPICAL
GE
1.6Ω
2
)
= ±15V
23 57 23 57
10
3
EMITTER CURRENT (A
4
10
7
5
)
A
3
(
2
3
10
7
5
3
2
2
10
7
5
REVERSE RECOVERY CURRENT
3
2
1
10
4
10
)
FREE-WHEEL DIODE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
1.2
Single Pulse, T
R
th(j–c)Q
R
th(j–c)R
1.0
C
= 10K/kW
= 20K/kW
= 25°C
0.8
0.6
0.4
0.2
NORMALIZED TRANSIENT THERMAL IMPEDANCE
0
10
-3
23 57
10
-2
23 57
TIME (s
10
-1
23 57
)
10
0
23 57
10
1
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HG-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
REVERSE BIAS SAFE OPERATING AREA
3000
V
CC
≤ 2200V, V
T
j
= 125°C, R
2500
)
A
(
2000
1500
1000
COLLECTOR CURRENT
500
0
COLLECTOR-EMITTER VOLTAGE (V
G(off)
1000 20000 3000 4000
(
RBSOA
GE
= +/-15V
≥ 1.6Ω
FREE-WHEEL DIODE REVERSE
)
3000
)
2500
A
(
2000
1500
1000
REVERSE RECOVERY CURRENT
)
RECOVERY SAFE OPERATING AREA
V
CC
≤ 2200V, di/dt ≤ 5400A/µs
T
j
= 125°C
500
0
1000 20000 3000 4000
EMITTER-COLLECTOR VOLTAGE (V
(
RRSOA
)
)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
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