MITSUBISHI CM1200HCB-34N User Manual

MITSUBISHI HVIGBT MODULES

CM1200HCB-34N

4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

HIGH POWER SWITCHING USE

CM1200HCB-34N

● IC ................................................................ 1200A

● V

CES ....................................................... 1700V

● Insulated Type

● 1-element in a Pack

● AISiC Baseplate

● Trench Gate IGBT : CSTBT

● Soft Reverse Recovery Diode

APPLICATION

Traction drives, High Reliability Converters / Inverters, DC choppers

INSULATED TYPE

TM

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

130

±0.5

±0.1

3 - M4 NUTS

screwing depth min. 7.7

CM

57

10.65

48.8

114

±0.1

C

E

±0.2

±0.3

18

±0.2

E

61.5

G

57

10.35

±0.3

±0.1

C

±0.2

+0.1

–0.2

20

E

6 - φ7

screwing depth min. 16.5

±0.15

5

4 - M8 NUTS

±0.5

±0.1

±0.2

40

140

124

±0.1

MOUNTING HOLES

+1

0

38

+1

CC

C

G E

E

CIRCUIT DIAGRAM

15

40

5.2

±0.2

0

28

±0.3

±0.2

LABEL

E

±0.5

29.5

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

Sep. 2009

MITSUBISHI HVIGBT MODULES

CM1200HCB-34N

HIGH POWER SWITCHING USE

4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

MAXIMUM RATINGS

Symbol Item Conditions Ratings Unit

V

CES

V

GES

I

C

I

CM

I

E

IEM P

c

V

iso

T

j

T

op

T

stg

t

psc

ELECTRICAL CHARACTERISTICS

Symbol Item Conditions

I

CES

V

GE(th)

I

GES

C

ies

C

oes

C

res

Q

g

V

CE(sat)

t

d(on)

t

r

E

on(10%)

t

d(off)

t

f

E

off(10%)

V

EC

t

rr

Q

rr

E

rec(10%)

Collector-emitter voltage Gate-emitter voltage

Collector current

Emitter current (Note 2)

Maximum power dissipation (Note 3) Isolation voltage Junction temperature Operating temperature Storage temperature Maximum short circuit pulse width

Collector cutoff current

Gate-emitter threshold voltage Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Collector-emitter saturation voltage Tu r n-on delay time Tu r n-on rise time Tu r n-on switching energy

(Note 5) Tu r n-off delay time Tu r n-off fall time Tu r n-off switching energy

(Note 5) Emitter-collector voltage

(Note 2) Reverse recovery time

(Note 2) Reverse recovery charge

(Note 2) Reverse recovery energy

(Note 2), (Note 5)

VGE = 0V, Tj = 25°C V

CE

= 0V, Tj = 25°C

DC, T

c

= 80°C

Pulse (Note 1) DC Pulse (Note 1) T

c

= 25°C, IGBT part

RMS, sinusoidal, f = 60Hz, t = 1 min.

V

CC

= 1000V, VCE ≤ V

V

CE

= V

CES

, VGE = 0V

CE

= 10 V, IC = 120 mA, Tj = 25°C

V V

GE

= V

GES

, VCE = 0V, Tj = 25°C

V

CE

= 10 V, VGE = 0 V, f = 100 kHz, Tj = 25°C

V

CC

= 900 V, IC = 1200 A, VGE = ±15 V, Tj = 25°C

I

C

= 1200 A (Note 4)

V

GE

= 15 V

V

CC

= 900 V, IC = 1200 A, VGE = ±15 V

R

G(on)

= 1.1 Ω, Tj = 125°C, Ls = 100 nH

CES

, VGE = 15V, Tj = 125°C

T

j

= 25°C

T

j

= 125°C

Tj = 25°C T

j

= 125°C

Inductive load

CC

= 900 V, IC = 1200 A, VGE = ±15 V

V R

G(off)

= 2.0 Ω, Tj = 125°C, Ls = 100 nH

Inductive load

E

= 1200 A (Note 4)

I V

GE

= 0 V

CC

= 900 V, IE = 1200 A, VGE = ±15 V

V R

G(on)

= 1.1 Ω, Tj = 125°C, Ls = 100 nH

Tj = 25°C T

j

= 125°C

Inductive load

— —

5.5 — — — — — — — — —

—

— —

—

— —

—

INSULATED TYPE

1700

± 20

1200 2400 1200 2400 8600

4000 –40 ~ +150 –40 ~ +125 –40 ~ +125

10

Limits

Ty p

—

4.0

6.5 —

220

12

3.5

15.2

2.05

2.30 — —

0.43

— —

0.32

2.20

1.85

—

410

0.29

MaxMin

5

10

7.5

0.5 — — — —

2.70 —

1.50

0.60

—

3.00

0.60

—

3.00 —

1.50

—

V V A A A A

W

V

°C °C °C µs

Unit

mA

V

µA nF nF nF µC

V

µs µs

J/P

µs µs

J/P

V

µs

µC

J/P

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

Sep. 2009

2

4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

THERMAL CHARACTERISTICS

Symbol Item Conditions

R

th(j-c)Q

R

th(j-c)R

R

th(c-f)

MECHANICAL CHARACTERISTICS

Symbol Item Conditions

M

t

M

s

M

t

m CTI d

a

d

s

L

P CE

R

CC’+EE’

Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed T

Thermal resistance Thermal resistance Contact thermal resistance

Junction to Case, IGBT part Junction to Case, FWDi part Case to Fin, λ

grease

= 1W/m·K, D

(c-f)

= 100 µm

M8: Main terminals screw

Mounting torque

M6: Mounting screw

M4: Auxiliary terminals screw Mass Comparative tracking index Clearance Creepage distance Parasitic stray inductance Internal lead resistance

2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).

3. Junction temperature (Tj) should not exceed T

4. Pulse width and repetition rate should be such as to cause negligible temperature rise.

5. E

on(10%)

/ E

off(10%)

/ E

rec(10%)

are the integral of

T

c

= 25°C

jmax

rating (150°C).

0.1VCE x 0.1IC x dt.

opmax

MITSUBISHI HVIGBT MODULES

CM1200HCB-34N

HIGH POWER SWITCHING USE

INSULATED TYPE

Limits

19.5

32.0

rating (125°C).

— — —

7.0

3.0

1.0 —

600

— —

Ty p

— —

10.0

Limits

Ty p

— — —

1.5 — — — 15

0.21

MaxMin

14.0

21.0 —

MaxMin

13.0

6.0

2.0 — — — — — —

Unit

K/kW K/kW K/kW

Unit

N·m N·m N·m

kg

— mm mm

nH mΩ

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

Sep. 2009

3