MITSUBISHI CM1200HCB-34N User Manual

MITSUBISHI HVIGBT MODULES

CM1200HCB-34N

4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

HIGH POWER SWITCHING USE

CM1200HCB-34N

● IC ................................................................ 1200A

● V

CES ....................................................... 1700V

● Insulated Type

● 1-element in a Pack

● AISiC Baseplate

● Trench Gate IGBT : CSTBT

● Soft Reverse Recovery Diode

APPLICATION

Traction drives, High Reliability Converters / Inverters, DC choppers

INSULATED TYPE

TM

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

130

±0.5

±0.1

3 - M4 NUTS

screwing depth
min. 7.7

CM

57

10.65

48.8

114

±0.1

C

C

E

±0.2

±0.3

18

±0.2

E

61.5

G

57

10.35

±0.3

±0.1

C

±0.2

+0.1

–0.2

20

E

6 - φ7

screwing depth
min. 16.5

±0.15

5

4 - M8 NUTS

±0.5

±0.1

±0.2

40

140

124

±0.1

MOUNTING HOLES

+1

0

38

+1

CC

C

G
E

E

CIRCUIT DIAGRAM

15

40

5.2

±0.2

0

28

±0.3

±0.2

LABEL

E

±0.5

29.5

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

Sep. 2009

MITSUBISHI HVIGBT MODULES

CM1200HCB-34N

HIGH POWER SWITCHING USE

4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

MAXIMUM RATINGS

Symbol Item Conditions Ratings Unit

V

CES

V

GES

I

C

I

CM

I

E

IEM
P

c

V

iso

T

j

T

op

T

stg

t

psc

ELECTRICAL CHARACTERISTICS

Symbol Item Conditions

I

CES

V

GE(th)

I

GES

C

ies

C

oes

C

res

Q

g

V

CE(sat)

t

d(on)

t

r

E

on(10%)

t

d(off)

t

f

E

off(10%)

V

EC

t

rr

Q

rr

E

rec(10%)

Collector-emitter voltage
Gate-emitter voltage

Collector current

Emitter current (Note 2)

Maximum power dissipation (Note 3)
Isolation voltage
Junction temperature
Operating temperature
Storage temperature
Maximum short circuit pulse width

Collector cutoff current

Gate-emitter threshold voltage
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Collector-emitter saturation
voltage
Tu r n-on delay time
Tu r n-on rise time
Tu r n-on switching energy

(Note 5)
Tu r n-off delay time
Tu r n-off fall time
Tu r n-off switching energy

(Note 5)
Emitter-collector voltage

(Note 2)
Reverse recovery time

(Note 2)
Reverse recovery charge

(Note 2)
Reverse recovery energy

(Note 2), (Note 5)

VGE = 0V, Tj = 25°C
V

CE

= 0V, Tj = 25°C

DC, T

c

= 80°C

Pulse (Note 1)
DC
Pulse (Note 1)
T

c

= 25°C, IGBT part

RMS, sinusoidal, f = 60Hz, t = 1 min.

V

CC

= 1000V, VCE ≤ V

V

CE

= V

CES

, VGE = 0V

CE

= 10 V, IC = 120 mA, Tj = 25°C

V
V

GE

= V

GES

, VCE = 0V, Tj = 25°C

V

CE

= 10 V, VGE = 0 V, f = 100 kHz, Tj = 25°C

V

CC

= 900 V, IC = 1200 A, VGE = ±15 V, Tj = 25°C

I

C

= 1200 A (Note 4)

V

GE

= 15 V

V

CC

= 900 V, IC = 1200 A, VGE = ±15 V

R

G(on)

= 1.1 Ω, Tj = 125°C, Ls = 100 nH

CES

, VGE = 15V, Tj = 125°C

T

j

= 25°C

T

j

= 125°C

Tj = 25°C
T

j

= 125°C

Inductive load

CC

= 900 V, IC = 1200 A, VGE = ±15 V

V
R

G(off)

= 2.0 Ω, Tj = 125°C, Ls = 100 nH

Inductive load

E

= 1200 A (Note 4)

I
V

GE

= 0 V

CC

= 900 V, IE = 1200 A, VGE = ±15 V

V
R

G(on)

= 1.1 Ω, Tj = 125°C, Ls = 100 nH

Tj = 25°C
T

j

= 125°C

Inductive load

—
—

5.5
—
—
—
—
—
—
—
—
—

—

—
—

—

—
—

—

—

—

INSULATED TYPE

1700

± 20

1200
2400
1200
2400
8600

4000
–40 ~ +150
–40 ~ +125
–40 ~ +125

10

Limits

Ty p

—

4.0

6.5
—

220

12

3.5

15.2

2.05

2.30
—
—

0.43

—
—

0.32

2.20

1.85

—

410

0.29

MaxMin

5

10

7.5

0.5
—
—
—
—

2.70
—

1.50

0.60

—

3.00

0.60

—

3.00
—

1.50

—

—

V
V
A
A
A
A

W

V

°C
°C
°C
µs

Unit

mA

V

µA
nF
nF
nF
µC

V

µs
µs

J/P

µs
µs

J/P

V

µs

µC

J/P

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

Sep. 2009

2

4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

THERMAL CHARACTERISTICS

Symbol Item Conditions

R

th(j-c)Q

R

th(j-c)R

R

th(c-f)

MECHANICAL CHARACTERISTICS

Symbol Item Conditions

M

t

M

s

M

t

m
CTI
d

a

d

s

L

P CE

R

CC’+EE’

Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed T

Thermal resistance
Thermal resistance
Contact thermal resistance

Junction to Case, IGBT part
Junction to Case, FWDi part
Case to Fin, λ

grease

= 1W/m·K, D

(c-f)

= 100 µm

M8: Main terminals screw

Mounting torque

M6: Mounting screw

M4: Auxiliary terminals screw
Mass
Comparative tracking index
Clearance
Creepage distance
Parasitic stray inductance
Internal lead resistance

2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).

3. Junction temperature (Tj) should not exceed T

4. Pulse width and repetition rate should be such as to cause negligible temperature rise.

5. E

on(10%)

/ E

off(10%)

/ E

rec(10%)

are the integral of

T

c

= 25°C

jmax

rating (150°C).

0.1VCE x 0.1IC x dt.

opmax

MITSUBISHI HVIGBT MODULES

CM1200HCB-34N

HIGH POWER SWITCHING USE

INSULATED TYPE

Limits

19.5

32.0

rating (125°C).

—
—
—

7.0

3.0

1.0
—

600

—
—

Ty p

—
—

10.0

Limits

Ty p

—
—
—

1.5
—
—
—
15

0.21

MaxMin

14.0

21.0
—

MaxMin

13.0

6.0

2.0
—
—
—
—
—
—

Unit

K/kW
K/kW
K/kW

Unit

N·m
N·m
N·m

kg

—
mm
mm

nH
mΩ

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

Sep. 2009

3

4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

PERFORMANCE CURVES

MITSUBISHI HVIGBT MODULES

CM1200HCB-34N

HIGH POWER SWITCHING USE

INSULATED TYPE

OUTPUT CHARACTERISTICS

2500

Tj = 125°C

V

GE

2000

)
A

(

1500

1000

COLLECTOR CURRENT

500

0

2500

= 20V

V

GE

= 15V

V

GE

= 12V

01 3245

COLLECTOR-EMITTER VOLTAGE (V

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

V

GE

= 15V

(

TYPICAL

(

TYPICAL

)

V

GE

V

)

GE

= 10V

= 8V

)

TRANSFER CHARACTERISTICS

2500

V

CE

= 20V

2000

)

A

(

1500

1000

COLLECTOR CURRENT

500

Tj = 25°C
T

j

6

0

02 64810

2500

= 125°C

GATE-EMITTER VOLTAGE (V

FORWARD CHARACTERISTICS

(

TYPICAL

FREE-WHEEL DIODE

(

TYPICAL

)

)

12

)

2000

)
A

(

1500

1000

COLLECTOR CURRENT

500

Tj = 25°C

j

= 125°C

T

01234

COLLECTOR-EMITTER SATURATION VOLTAGE (V

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

2000

)

A

(

1500

1000

EMITTER CURRENT

500

Tj = 25°C
T

j

00

01234

)

4

EMITTER-COLLECTOR VOLTAGE (V

= 125°C

)

Sep. 2009

4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

MITSUBISHI HVIGBT MODULES

CM1200HCB-34N

HIGH POWER SWITCHING USE

INSULATED TYPE

CAPACITANCE CHARACTERISTICS

3

10

7
5

3

2

)

2

10

nF

(

7
5

3

2

1

10

CAPACITANCE

7
5

3

V

GE

= 0V, Tj = 25°C

2

f = 100kHz

0

10

-1

23 57

10

COLLECTOR-EMITTER VOLTAGE (V

HALF-BRIDGE SWITCHING ENERGY

1.8
V

CC

= 900V, V

R

G (on)

1.6
Tj = 125°C, Inductive load

1.4

)
J/P

(

1.2

(

TYPICAL

0

23 57 23 57

CHARACTERISTICS

(

TYPICAL

GE

= 1.1Ω, R

= ±15V

G (off)

= 2.0Ω

)

GATE CHARGE CHARACTERISTICS

(

TYPICAL

)

20

V

CE

= 900V, IC = 1200A

Tj = 25°C

15

)

V

C

ies

(

10

5

0

C

oes

-5

GATE-EMITTER VOLTAGE

-10

C

10

res

1

10

2

)

-15
051015 2010

GATE CHARGE (µC

)

HALF-BRIDGE SWITCHING ENERGY

)

CHARACTERISTICS

(

TYPICAL

)

3.5

V

CC

= 900V, IC = 1200A

V

GE

= ±15V, Tj = 125°C

Inductive load

3.0

E

on

)

J/P

(

2.5

E

on

1.0

0.8

E

off

0.6

SWITCHING ENERGIES

0.4
E

rec

0.2

0

0 500 1000 1500 2000 2500

COLLECTOR CURRENT (A

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

)

2.0

1.5

1.0

SWITCHING ENERGIES

0.5

0

024681012

5

GATE RESISTANCE (Ω

E

off

E

rec

)

Sep. 2009

4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

MITSUBISHI HVIGBT MODULES

CM1200HCB-34N

HIGH POWER SWITCHING USE

INSULATED TYPE

HALF-BRIDGE SWITCHING TIME

1

10

V

CC

= 900V, V

7

R

G (on)

5

3

2

= 1.1Ω, R

T

j

= 125°C, Inductive load

t

d(off)

)
µs

0

10

(

10

SWITCHING TIMES

10

t

d(on)

7
5

3

2

-1

7
5

3

2

-2

10

t

f

t

r

2

COLLECTOR CURRENT (A

CHARACTERISTICS

(

TYPICAL

GE

= ±15V

G (off)

= 2.0Ω

3

10

)

FREE-WHEEL DIODE REVERSE RECOVERY

CHARACTERISTICS

(

2

10

V

CC

= 900V, V

7

R

G (on)

5

3

)

2

µs

(

1

10

7
5

3

2

0

10

7
5

REVERSE RECOVERY TIME

3

2

-1

10

4

423 57423 57

10

10

= 1.1Ω, Tj = 125°C

Inductive load

2

)

TYPICAL

GE

= ±15V

EMITTER CURRENT (A

10

)

l

rr

t

rr

3

423 57423 57

10

4

10

7
5

)

3

A

(

2

3

10

7
5

3

2

2

10

7
5

REVERSE RECOVERY CURRENT

3

2

1

10

4

)

TRANSIENT THERMAL IMPEDANCE

CHARACTERISTICS

1.2

R

th(j–c)Q

= 14.0K/kW

R

th(j–c)R

= 21.0K/kW

1.0

0.8

0.6

0.4

0.2

NORMALIZED TRANSIENT THERMAL IMPEDANCE

0

10

-3

23 57

10

-2

23 57

TIME (s

10

-1

23 57

)

10

0

23 57

10

1

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

Sep. 2009

6

4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

REVERSE BIAS SAFE OPERATING AREA

6000

V

CC

≤ 1200V, V

T

j

= 125°C, R

5000

)
A

(

4000

3000

2000

COLLECTOR CURRENT

1000

GE

G (off)

(

RBSOA

= ±15V
≥ 2.0Ω

)

25000

CC

≤ 1000V, V

V
R

G (on)

≥ 1.1Ω, R

j

= 125°C, tpsc ≤ 10µs

T

20000

)

A

(

15000

10000

COLLECTOR CURRENT

5000

MITSUBISHI HVIGBT MODULES

CM1200HCB-34N

HIGH POWER SWITCHING USE

INSULATED TYPE

SHORT CIRCUIT

SAFE OPERATING AREA

(SCSOA)

GE

= ±15V

G (off)

≥ 2.0Ω

0

0 500 1000 1500 2000

COLLECTOR-EMITTER VOLTAGE (V

FREE-WHEEL DIODE REVERSE RECOVERY

SAFE OPERATING AREA

(

)

RRSOA

1600

V

CC

≤ 1200V, di/dt ≤ 6500A/µs

Tj = 125°C

1400

)
A

(

1200

1000

800

600

400

REVERSE RECOVERY CURRENT

200

0

0 500 1000 1500 2000

)

COLLECTOR-EMITTER VOLTAGE (V

)

0

0

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

500 1000 1500 2000

COLLECTOR-EMITTER VOLTAGE (V

)

Sep. 2009

7