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MITSUBISHI HVIGBT MODULES
CM1200HB-66H
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE
CM1200HB-66H
● IC................................................................ 1200A
HIGH POWER SWITCHING USE
● V
CES ....................................................... 3300V
● Insulated T ype
● 1-element in a pack
APPLICATION
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
190
3 - M4 NUTS
CM
171
±0.25
±0.25
57
C
79.4
57
C
E
G
E
20.25
41.25
61.5
57
±0.25
CC
EE
61.5
13
6 - M8 NUTS
20
±0.25
40
140
124
8 - φ7MOUNTING HOLES
5.2
C
G
E
C
E
CIRCUIT DIAGRAM
15
40
C
E
C
E
5
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
38
28
LABEL
29.5
Mar. 2003
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MITSUBISHI HVIGBT MODULES
CM1200HB-66H
HIGH POWER SWITCHING USE
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS (Tj = 25°C)
Symbol Item Conditions UnitRatings
CES
V
VGES
IC
ICM
IE
IEM
PC
Tj
Tstg
Viso
Collector-emitter voltage
Gate-emitter voltage
Collector current
(Note 2)
Emitter current
(Note 2)
Maximum collector dissipation
(Note 3)
Junction temperature
Storage temperature
Isolation voltage
—
Mounting torque
—
Mass
GE = 0V
V
CE = 0V
V
DC, T
C = 100°C
Pulse (Note 1)
Pulse (Note 1)
C = 25°C, IGBT part
T
—
—
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value
15600
–40 ~ +150
–40 ~ +125
6.67 ~ 13.00
2.84 ~ 6.00
0.88 ~ 2.00
INSULATED TYPE
3300
±20
1200
2400
1200
2400
6000
N·m
N·m
N·m
2.2
V
V
A
A
A
A
W
°C
°C
V
kg
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
I
CES
V
GE(th)
IGES
VCE(sat)
Cies
Coes
Cres
QG
td (on)
tr
td (off)
tf
VEC
trr
Qrr
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Note 1. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
Collector cutoff current
Gate-emitter
threshold voltage
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
(Note 2)
Emitter-collector voltage
(Note 2)
Reverse recovery time
(Note 2)
Reverse recovery charge
Thermal resistance
Contact thermal resistance
2. I
E, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
3. Junction temperature (T
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Item Conditions
V
CE = VCES, VGE = 0V
I
C = 120mA, VCE = 10V
V
GE = VGES, VCE = 0V
j = 25°C
T
T
j = 125°C
V
CE = 10V
GE = 0V
V
CC = 1650V, IC = 1200A, VGE = 15V
V
V
CC = 1650V, IC = 1200A
V
GE1 = VGE2 = 15V
R
G = 1.6Ω
I
C = 1200A, VGE = 15V (Note 4)
Resistive load switching operation
I
E = 1200A, VGE = 0V
E = 1200A,
I
die / dt = –2400A / µs (Note 1)
Junction to case, IGBT part
Junction to case, FWDi part
Case to fin, conductive grease applied
j) should not increase beyond 150°C.
Min Typ Max
Limits
—
—
6.04.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3.80
4.00
180
18.0
5.4
8.6
—
—
—
—
2.80
—
400
—
—
0.006
0.008
0.016
15
7.5
0.5
4.94
—
—
—
—
—
1.60
2.00
2.50
1.00
3.64
1.40
—
—
Unit
mA
V
µA
V
nF
nF
nF
µC
µs
µs
µs
µs
V
µs
µC
K/W
K/W
K/W
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Mar. 2003
Page 3
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
MITSUBISHI HVIGBT MODULES
CM1200HB-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
)
A
(
2400
2000
1600
OUTPUT CHARACTERISTICS
Tj = 25°C
VGE = 14V
VGE = 15V
VGE = 20V
(
TYPICAL
VGE = 11V
1200
800
400
COLLECTOR CURRENT IC
0
2468
COLLECTOR-EMITTER VOLTAGE V
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
8
)
V
(
CE(sat)
VGE = 15V
6
(
TYPICAL
4
)
VGE = 13V
VGE = 12V
VGE = 10V
VGE = 9V
VGE = 8V
VGE = 7V
)
CE
100
(V)
TRANSFER CHARACTERISTICS
(
TYPICAL
2400
)
A
(
VCE = 10V
2000
1600
1200
800
400
COLLECTOR CURRENT IC
0
4812
GATE-EMITTER VOLTAGE VGE (V
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
10
)
V
(
CE(sat)
Tj = 25°C
8
(
TYPICAL
6
4
)
Tj = 25°C
T
)
IC = 2400A
IC = 1200A
j = 125°C
16
200
)
2
COLLECTOR-EMITTER
SATURATION VOLTAGE V
0
400 800 16001200 2000
COLLECTOR CURRENT IC (A
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
)
V
8
(
6
4
2
0
EMITTER-COLLECTOR VOLTAGE VEC
400 800 16001200 2000
EMITTER CURRENT IE (A
(
TYPICAL
T
j = 25°C
Tj = 125°C
)
Tj = 25°C
Tj = 125°C
COLLECTOR-EMITTER
2
SATURATION VOLTAGE V
24000
)
24000
)
0
020161284
GATE-EMITTER VOLTAGE VGE (V
CAPACITANCE CHARACTERISTICS
3
10
)
7
5
nF
(
3
2
2
10
7
5
3
2
1
10
7
5
VGE = 0V, Tj = 25°C
3
Cies, Coes : f = 100kHz
2
CAPACITANCE Cies, Coes, Cres
10
Cres
0
–1
2310
(
TYPICAL
: f = 1MHz
5710023 5710123 5710
COLLECTOR-EMITTER VOLTAGE VCE (V
IC = 480A
)
)
Cies
Coes
Cres
2
)
Mar. 2003
Page 4
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HB-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME CHARACTERISTICS
(
TYPICAL
)
5
3
HALF-BRIDGE
)
2
µs
(
0
10
t
d(off)
t
d(on)
7
5
3
t
r
t
f
2
SWITCHING TIMES
–1
10
7
5
710
5
VCC = 1650V, VGE = ±15V
R
G
= 1.6Ω, Tj = 125°C
Inductive load
2
23 5710
3
COLLECTOR CURRENT IC (A
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
5.0
VCC = 1650V, VGE = ±15V,
R
G
)
J/P
(
= 1.6Ω, Tj = 125°C,
Inductive load
4.0
(
TYPICAL
)
23 5
)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(
5
)
µs
(
rr
VCC = 1650V, Tj = 125°C
3
Inductive load
GE
= ±15V, RG = 1.6Ω
V
2
1
10
TYPICAL
)
I
rr
7
5
3
2
0
10
7
REVERSE RECOVERY TIME t
5
2
710
5
23 5710
t
rr
3
EMITTER CURRENT IE (A
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
20.0
VCC = 1650V, IC = 1200A,
GE
= ±15V, Tj = 125°C,
V
)
Inductive load
J/P
(
15.0
(
TYPICAL
)
23 5
)
)
5
A
(
rr
3
2
3
10
7
5
3
2
2
10
7
REVERSE RECOVERY CURRENT I
5
3.0
2.0
1.0
SWITCHING ENERGY
0
0 400 800 2400200016001200
CURRENT (A
GATE CHARGE CHARACTERISTICS
20
)
V
(
GE
VCC = 1650V
I
16
C
= 1200A
(
TYPICAL
12
8
4
GATE-EMITTER VOLTAGE V
0
GATE CHARGE QG (nC
E
on
E
off
10.0
E
on
5.0
E
rec
)
)
20000150000 5000 10000
)
SWITCHING ENERGY
0
0 5 10 15 20
GATE RESISTANCE (Ω
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
1
10
Single Pulse
7
5
T
C
= 25°C
3
th(j – c)Q
= 0.008K/W
th(j – c)R
= 0.016K/W
10
–2
23 57 23 57 23 57
10
10
10
R
2
R
0
7
5
3
2
–1
7
5
3
2
–2
–3
10
th(j – c)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
TIME (s
E
off
)
10
–1
10
0
)
Mar. 2003
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