MITSUBISHI CM1200HA-50H User Guide
MITSUBISHI HVIGBT MODULES
CM1200HA-50H
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE
CM1200HA-50H
● IC................................................................ 1200A
HIGH POWER SWITCHING USE
● V
CES ....................................................... 2500V
● Insulated T ype
● 1-element in a pack
APPLICATION
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
190
3 - M4 NUTS
CM
171
57
±0.25
C
E
79.4
±0.25
57
C
G
20.25
41.25
61.5
57
±0.25
61.5
13
6 - M8 NUTS
20
CC
±0.25
40
140
EEE
124
8 - φ 7MOUNTING HOLES
38
5
EC
E
G
C
CIRCUIT DIAGRAM
15
5.2
28
40
LABEL
30
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Mar. 2003
MITSUBISHI HVIGBT MODULES
CM1200HA-50H
HIGH POWER SWITCHING USE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS (Tj = 25°C)
Symbol Item Conditions UnitRatings
CES
V
VGES
IC
ICM
IE
IEM
PC
Tj
Tstg
Viso
Collector-emitter voltage
Gate-emitter voltage
Collector current
(Note 2)
Emitter current
(Note 2)
Maximum collector dissipation
(Note 3)
Junction temperature
Storage temperature
Isolation voltage
—
Mounting torque
—
Mass
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
I
CES
V
GE(th)
IGES
VCE(sat)
Cies
Coes
Cres
QG
td (on)
tr
td (off)
tf
VEC
trr
Qrr
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Note 1. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
Collector cutoff current
Gate-emitter
threshold voltage
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
(Note 2)
Emitter-collector voltage
(Note 2)
Reverse recovery time
(Note 2)
Reverse recovery charge
Thermal resistance
Contact thermal resistance
2. I
E, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
3. Junction temperature (T
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Item Conditions
j) should not increase beyond 150°C.
GE = 0V
V
V
CE = 0V
C = 80°C
DC, T
Pulse (Note 1)
Pulse (Note 1)
C = 25°C, IGBT part
T
—
—
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value
CE = VCES, VGE = 0V
V
I
C = 120mA, VCE = 10V
V
GE = VGES, VCE = 0V
T
j = 25°C
T
j = 125°C
CE = 10V
V
GE = 0V
V
CC = 1250V, IC = 1200A, VGE = 15V
V
V
CC = 1250V, IC = 1200A
V
GE1 = VGE2 = 15V
R
G = 2.5Ω
C = 1200A, VGE = 15V (Note 4)
I
Resistive load switching operation
I
E = 1200A, VGE = 0V
I
E = 1200A
die / dt = –2400A / µs
Junction to case, IGBT part
Junction to case, FWDi part
Case to fin, conductive grease applied
10400
–40 ~ +150
–40 ~ +125
6.67 ~ 13.00
2.84 ~ 6.00
0.88 ~ 2.00
Limits
Min Typ Max
—
4.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
INSULATED TYPE
2500
±20
1200
2400
1200
2400
6000
2.2
—
6.0
—
3.20
3.60
120
13.2
4.0
5.4
—
—
—
—
2.90
—
250
—
—
0.006
15
7.5
0.5
4.16
—
—
—
—
—
1.60
2.00
2.50
1.00
3.77
1.20
—
0.012
0.024
—
V
V
A
A
A
A
W
°C
°C
V
N·m
N·m
N·m
kg
Unit
mA
V
µA
V
nF
nF
nF
µC
µs
µs
µs
µs
V
µs
µC
K/W
K/W
K/W
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Mar. 2003
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