Page 1
MITSUBISHI HVIGBT MODULES
CM1200HA-50H
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE
CM1200HA-50H
● IC................................................................ 1200A
HIGH POWER SWITCHING USE
● V
CES ....................................................... 2500V
● Insulated T ype
● 1-element in a pack
APPLICATION
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
190
3 - M4 NUTS
CM
171
57
±0.25
C
E
79.4
±0.25
57
C
G
20.25
41.25
61.5
57
±0.25
61.5
13
6 - M8 NUTS
20
CC
±0.25
40
140
EEE
124
8 - φ 7MOUNTING HOLES
38
5
EC
E
G
C
CIRCUIT DIAGRAM
15
5.2
28
40
LABEL
30
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Mar. 2003
Page 2
MITSUBISHI HVIGBT MODULES
CM1200HA-50H
HIGH POWER SWITCHING USE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS (Tj = 25°C)
Symbol Item Conditions UnitRatings
CES
V
VGES
IC
ICM
IE
IEM
PC
Tj
Tstg
Viso
Collector-emitter voltage
Gate-emitter voltage
Collector current
(Note 2)
Emitter current
(Note 2)
Maximum collector dissipation
(Note 3)
Junction temperature
Storage temperature
Isolation voltage
—
Mounting torque
—
Mass
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
I
CES
V
GE(th)
IGES
VCE(sat)
Cies
Coes
Cres
QG
td (on)
tr
td (off)
tf
VEC
trr
Qrr
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Note 1. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
Collector cutoff current
Gate-emitter
threshold voltage
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
(Note 2)
Emitter-collector voltage
(Note 2)
Reverse recovery time
(Note 2)
Reverse recovery charge
Thermal resistance
Contact thermal resistance
2. I
E, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
3. Junction temperature (T
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Item Conditions
j) should not increase beyond 150°C.
GE = 0V
V
V
CE = 0V
C = 80°C
DC, T
Pulse (Note 1)
Pulse (Note 1)
C = 25°C, IGBT part
T
—
—
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value
CE = VCES, VGE = 0V
V
I
C = 120mA, VCE = 10V
V
GE = VGES, VCE = 0V
T
j = 25°C
T
j = 125°C
CE = 10V
V
GE = 0V
V
CC = 1250V, IC = 1200A, VGE = 15V
V
V
CC = 1250V, IC = 1200A
V
GE1 = VGE2 = 15V
R
G = 2.5Ω
C = 1200A, VGE = 15V (Note 4)
I
Resistive load switching operation
I
E = 1200A, VGE = 0V
I
E = 1200A
die / dt = –2400A / µs
Junction to case, IGBT part
Junction to case, FWDi part
Case to fin, conductive grease applied
10400
–40 ~ +150
–40 ~ +125
6.67 ~ 13.00
2.84 ~ 6.00
0.88 ~ 2.00
Limits
Min Typ Max
—
4.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
INSULATED TYPE
2500
±20
1200
2400
1200
2400
6000
2.2
—
6.0
—
3.20
3.60
120
13.2
4.0
5.4
—
—
—
—
2.90
—
250
—
—
0.006
15
7.5
0.5
4.16
—
—
—
—
—
1.60
2.00
2.50
1.00
3.77
1.20
—
0.012
0.024
—
V
V
A
A
A
A
W
°C
°C
V
N·m
N·m
N·m
kg
Unit
mA
V
µA
V
nF
nF
nF
µC
µs
µs
µs
µs
V
µs
µC
K/W
K/W
K/W
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Mar. 2003
Page 3
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
MITSUBISHI HVIGBT MODULES
CM1200HA-50H
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTPUT CHARACTERISTICS
(
TYPICAL
2400
2000
1600
Tj = 25°C
V
GE
= 13V
V
GE
= 14V
V
GE
= 15V
V
GE
= 20V
)
A
(
C
1200
800
400
COLLECTOR CURRENT I
0
246
COLLECTOR-EMITTER VOLTAGE V
COLLECTOR-EMITTER SATURATION
)
V
(
CE(sat)
VOLTAGE CHARACTERISTICS
5
V
GE
4
= 15V
(
TYPICAL
3
2
)
TRANSFER CHARACTERISTICS
(
TYPICAL
)
2400
V
GE
= 12V
V
GE
= 11V
)
A
(
C
2000
V
CE
= 10V
1600
V
GE
= 10V
1200
800
V
GE
= 9V
400
V
GE
= 8V
V
GE
= 7V
100
8
)
CE
(V
COLLECTOR CURRENT I
0
4812
GATE-EMITTER VOLTAGE VGE (V
Tj = 25°C
j
= 125°C
T
16
200
)
COLLECTOR-EMITTER SATURATION
)
)
V
(
CE(sat)
VOLTAGE CHARACTERISTICS
(
TYPICAL
10
Tj = 25°C
8
)
IC = 2400A
6
IC = 1200A
4
COLLECTOR-EMITTER
1
SATURATION VOLTAGE V
0
COLLECTOR CURRENT IC (A
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
)
V
5
(
EC
(
TYPICAL
4
3
2
1
0
EMITTER-COLLECTOR VOLTAGE V
EMITTER CURRENT IE (A
T
T
)
Tj = 25°C
T
j
= 25°C
j
= 125°C
24000 400 1200800 1600 2000 0 20161284
)
j
= 125°C
24000 400 1200800 1600 2000
)
COLLECTOR-EMITTER
2
SATURATION VOLTAGE V
0
GATE-EMITTER VOLTAGE VGE (V
CAPACITANCE CHARACTERISTICS
3
10
)
7
5
nF
(
3
res
2
, C
2
10
oes
7
, C
5
ies
3
2
1
10
7
5
3
2
CAPACITANCE C
0
10
–1
2310
(
TYPICAL
V
GE
= 0V, Tj = 25°C
ies, Coes
C
res
C
5710023 5710123 5710
COLLECTOR-EMITTER VOLTAGE VCE (V
IC = 480A
)
: f = 100kHz
: f = 1MHz
)
C
ies
C
oes
C
res
2
)
Mar. 2003
Page 4
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HA-50H
HIGH POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME CHARACTERISTICS
(
TYPICAL
)
5
3
HALF-BRIDGE
)
2
µs
(
0
10
t
d(off)
t
d(on)
7
t
5
3
2
SWITCHING TIMES
–1
10
7
5
2
710
5
VCC = 1250V, VGE = ±15V
G
= 2.5Ω, Tj = 125°C
R
Inductive load
23 5710
r
t
f
3
COLLECTOR CURRENT IC (A
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
2.0
VCC = 1250V, VGE = ±15V,
R
G
)
J/P
(
= 2.5Ω, Tj = 125°C,
Inductive load
1.5
(
TYPICAL
)
1.0
23 5
)
E
on
E
off
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(
5
)
µs
(
rr
VCC = 1250V, Tj = 125°C
3
Inductive load
V
GE
= ±15V, RG = 2.5Ω
2
0
10
TYPICAL
7
)
t
rr
I
rr
5
3
2
–1
10
7
REVERSE RECOVERY TIME t
5
5
710
2
23 5710
3
EMITTER CURRENT IE (A
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(
TYPICAL
)
3.0
)
2.5
J/P
(
2.0
1.5
23 5
)
)
5
A
(
rr
3
2
3
10
7
5
3
2
2
10
7
REVERSE RECOVERY CURRENT I
5
0.5
SWITCHING ENERGY
0
0 500 1000 1500
CURRENT (A
GATE CHARGE CHARACTERISTICS
20
)
V
(
GE
16
VCC = 1250V
I
C
= 1200A
(
TYPICAL
)
12
8
4
GATE-EMITTER VOLTAGE V
0
2000 4000
GATE CHARGE QG (nC
1.0
0.5
E
rec
)
SWITCHING ENERGY
0
0 5 10 15 20 3025
GATE RESISTANCE (Ω
)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
1
10
Single Pulse
7
5
T
C
= 25°C
3
R
th(j – c)Q
th(j – c)
2
R
0
10
7
5
3
2
–1
10
7
5
NORMALIZED TRANSIENT
3
THERMAL IMPEDANCE Z
2
–2
10
8000 1000060000
10
–3
)
= 0.012K/W
th(j – c)R
= 0.024K/W
10
–2
23 57 23 57 23 57
TIME (s
–1
10
)
10
0
Mar. 2003
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