MITSUBISHI HVIGBT MODULES
CM1200HA-34H
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE
CM1200HA-34H
● IC................................................................ 1200A
HIGH POWER SWITCHING USE
● V
CES ....................................................... 1700V
● Insulated T ype
● 1-element in a pack
APPLICATION
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
130
C
E
CM
3 - M4 NUTS
114
57
±0.25
C
16.5
18
E
18.5
2.5
61.5
57
±0.25
C
E
G
4 - M8 NUTS
20
±0.25
30
140
124
6 - φ 7 MOUNTING HOLES
14.5
C
C
G
E
E
CIRCUIT DIAGRAM
35
11
C
E
5
38
5
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
28
LABEL
31.5
Mar. 2003
MITSUBISHI HVIGBT MODULES
CM1200HA-34H
HIGH POWER SWITCHING USE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS (Tj = 25°C)
Symbol Item Conditions UnitRatings
CES
V
VGES
IC
ICM
IE
IEM
PC
Tj
Tstg
Viso
Collector-emitter voltage
Gate-emitter voltage
Collector current
(Note 2)
Emitter current
(Note 2)
Maximum collector dissipation
(Note 3)
Junction temperature
Storage temperature
Isolation voltage
—
Mounting torque
—
Mass
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
I
CES
V
GE(th)
IGES
VCE(sat)
Cies
Coes
Cres
QG
td (on)
tr
td (off)
tf
VEC
trr
Qrr
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Note 1. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
Collector cutoff current
Gate-emitter
threshold voltage
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
(Note 2)
Emitter-collector voltage
(Note 2)
Reverse recovery time
(Note 2)
Reverse recovery charge
Thermal resistance
Contact thermal resistance
2. I
E, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
3. Junction temperature (T
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Item Conditions
j) should not increase beyond 150°C.
GE = 0V
V
CE = 0V
V
DC, T
C = 95°C
Pulse (Note 1)
Pulse (Note 1)
C = 25°C, IGBT part
T
—
—
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value
V
CE = VCES, VGE = 0V
I
C = 120mA, VCE = 10V
GE = VGES, VCE = 0V
V
T
j = 25°C
T
j = 125°C
CE = 10V
V
V
GE = 0V
CC = 850V, IC = 1200A, VGE = 15V
V
V
CC = 850V, IC = 1200A
V
GE1 = VGE2 = 15V
G = 1.6Ω
R
C = 1200A, VGE = 15V (Note 4)
I
Resistive load switching operation
I
E = 1200A, VGE = 0V
I
E = 1200A
die / dt = –2400A / µs
Junction to case, IGBT part
Junction to case, FWDi part
Case to fin, conductive grease applied
13800
–40 ~ +150
–40 ~ +125
6.67 ~ 13.00
2.84 ~ 6.00
0.88 ~ 2.00
Min Typ Max
—
4.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
INSULATED TYPE
1700
±20
1200
2400
1200
2400
4000
1.5
Limits
—
5.5
—
2.75
3.30
140
20.0
7.6
6.6
—
—
—
—
2.40
—
200
—
—
0.008
30
6.5
0.5
3.58
—
—
—
—
—
1.20
1.50
2.00
0.60
3.12
2.00
—
0.009
0.028
—
V
V
A
A
A
A
W
°C
°C
V
N·m
N·m
N·m
kg
Unit
mA
V
µA
V
nF
nF
nF
µC
µs
µs
µs
µs
V
µs
µC
K/W
K/W
K/W
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Mar. 2003
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
)
A
(
C
2400
2000
1600
OUTPUT CHARACTERISTICS
Tj = 25°C
V
GE
= 14V
V
GE
= 15V
V
GE
= 20V
(
TYPICAL
V
V
GE
GE
)
= 12V
= 13V
2400
V
GE
= 11V
GE
= 10V
V
)
(
A
C
2000
1600
MITSUBISHI HVIGBT MODULES
CM1200HA-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
TRANSFER CHARACTERISTICS
V
CE
= 10V
(
TYPICAL
)
1200
800
400
COLLECTOR CURRENT I
0
468
2
COLLECTOR-EMITTER VOLTAGE V
COLLECTOR-EMITTER SATURATION
)
V
(
CE(sat)
VOLTAGE CHARACTERISTICS
5
V
GE
4
= 15V
(
TYPICAL
3
2
COLLECTOR-EMITTER
1
SATURATION VOLTAGE V
0
0 400 800 1200 1600 2000 2400 0 20161284
COLLECTOR CURRENT IC (A
)
V
GE
= 9V
V
GE
= 8V
V
GE
= 7V
Tj = 25°C
j
= 125°C
T
)
CE
100
(V
1200
800
400
COLLECTOR CURRENT I
0
)
GATE-EMITTER VOLTAGE VGE (V
Tj = 25°C
j
= 125°C
T
200481216
)
COLLECTOR-EMITTER SATURATION
)
V
(
CE(sat)
VOLTAGE CHARACTERISTICS
10
Tj = 25°C
8
6
(
TYPICAL
)
IC = 2400A
IC = 1200A
4
COLLECTOR-EMITTER
2
SATURATION VOLTAGE V
0
GATE-EMITTER VOLTAGE VGE (V
IC = 480A
)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
)
V
5
(
EC
(
TYPICAL
)
4
3
2
1
0
EMITTER-COLLECTOR VOLTAGE V
0 24001200 1600 2000800400
EMITTER CURRENT IE (A
Tj = 25°C
j
= 125°C
T
)
CAPACITANCE CHARACTERISTICS
3
10
)
7
5
nF
(
3
res
2
, C
2
10
oes
7
, C
5
ies
3
2
1
10
7
5
V
GE
3
ies, Coes
C
2
C
10
res
0
–1
2310
CAPACITANCE C
(
TYPICAL
)
= 0V, Tj = 25°C
: f = 100kHz
: f = 1MHz
5710023 5710123 5710
COLLECTOR-EMITTER VOLTAGE VCE (V
C
ies
C
oes
C
res
2
)
Mar. 2003
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HA-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME CHARACTERISTICS
5
VCC = 850V, VGE = ±15V
G
= 1.6Ω, Tj = 125°C
R
3
)
(
µs
Inductive load
2
0
10
7
5
3
2
SWITCHING TIMES
–1
10
(
TYPICAL
)
t
d(off)
t
d(on)
t
r
t
f
7
HALF-BRIDGE
5
5
710
2
23 5710
3
COLLECTOR CURRENT IC (A
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
1.2
VCC = 850V, VGE = ±15V,
R
G
)
J/P
(
= 1.6Ω, Tj = 125°C,
1.0
Inductive load
(
TYPICAL
)
0.8
0.6
23 5
)
E
on
E
off
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(
5
)
(
VCC = 850V, Tj = 125°C
µs
3
Inductive load
rr
10
GE
V
2
0
= ±15V, RG = 1.6Ω
TYPICAL
7
)
t
rr
I
rr
5
3
2
–1
10
7
REVERSE RECOVERY TIME t
5
5
710
2
23 5710
3
EMITTER CURRENT IE (A
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(
TYPICAL
)
3.0
E
)
J/P
(
2.5
on
2.0
1.5
E
off
23 5
)
)
5
A
(
rr
3
2
3
10
7
5
3
2
2
10
7
REVERSE RECOVERY CURRENT I
5
0.4
0.2
SWITCHING ENERGY
0
0 400 800 24001200 1600 2000
CURRENT (A
GATE CHARGE CHARACTERISTICS
20
)
V
(
GE
16
VCC = 850V
I
C
= 1200A
(
TYPICAL
12
8
4
GATE-EMITTER VOLTAGE V
0
2000 4000
GATE CHARGE QG (nC
1.0
E
rec
0.5
SWITCHING ENERGY
0
0 5 10 15 20 3025
)
)
th(j – c)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
8000 1000060000
IMPEDANCE CHARACTERISTICS
1
10
Single Pulse
7
5
T
C
= 25°C
3
th(j – c)Q
R
2
R
th(j – c)R
0
10
7
5
3
2
–1
10
7
5
3
2
–2
10
–3
23 57 23 57 23 57
10
)
VCC = 850V, IC = 1200A,
GE
= ±15V, Tj = 125°C,
V
Inductive load
E
rec
GATE RESISTANCE (Ω
TRANSIENT THERMAL
= 0.009K/W
= 0.028K/W
10
–2
TIME (s
–1
10
)
)
0
10
Mar. 2003
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