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MITSUBISHI HVIGBT MODULES
CM1200DC-34N
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
CM1200DC-34N
● IC ................................................................ 1200A
● V
CES ....................................................... 1700V
● Insulated Type
● 2-element in a Pack
● AISiC Baseplate
● Trench Gate IGBT : CSTBT™
● Soft Reverse Recovery Diode
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
INSULA TED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
130
±0.5
57
6 - M4 NUTS
screwing depth
min. 7.7
±0.25
42
31
E1
G1
16
±0.2
40
±0.2
53
±0.2
±0.2
11.85
18
±0.2
55.2
57
±0.25
E2
C2C1
G2
44
±0.2
57
±0.2
±0.3
4 - M8 NUTS
±0.1
20
±0.5
±0.25
±0.2
30
140
124
6 - φ 7 MOUNTING HOLES
screwing depth
min. 16.5
11.5
14
±0.2
±0.2
E1
G1
C1
4(E1)
3(C1)
CIRCUIT DIAGRAM
35
±0.2
5
2(C2)
1(E2)
±0.2
C2
G2
E2
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
+1
–0
+1
±0.2
5
–0
38
28
LABEL
±0.5
29.5
Jul. 2005
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MITSUBISHI HVIGBT MODULES
CM1200DC-34N
HIGH POWER SWITCHING USE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS
Symbol Item Conditions UnitRatings
V
CES
VGES
IC
ICM
IE
IEM
PC
Tj
Top
Tstg
Viso
tpsc
Collector-emitter voltage
Gate-emitter voltage
Collector current
(Note 2)
Emitter current
(Note 2)
Maximum power dissipation
(Note 3)
Junction temperature
Operating temperature
Storage temperature
Isolation voltage
Maximum short circuit pulse
width
ELECTRICAL CHARACTERISTICS
Symbol
I
CES
GE(th)
V
IGES
VCE(sat)
Cies
Coes
Cres
Qg
VEC
td(on)
tr
Eon
td(off)
tf
Eoff
trr
Irr
Qrr
Erec
Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C).
Collector cut-off current
Gate-emitter
threshold voltage
Gate leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
(Note 2)
Emitter-collector voltage
Turn-on delay time
Turn-on rise time
Turn-on switching energy
Turn-off delay time
Turn-off fall time
Turn-off switching energy
(Note 2)
Reverse recovery time
(Note 2)
Reverse recovery current
(Note 2)
Reverse recovery charge
(Note 2)
Reverse recovery energy
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
3. Junction temperature (T
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Item Conditions
j) should not exceed Tjmax rating (150°C).
V
GE = 0V, Tj = 25°C
V
CE = 0V, Tj = 25°C
T
C = 75°C
Pulse (Note 1)
Pulse (Note 1)
T
C = 25°C, IGBT part
RMS, sinusoidal, f = 60Hz, t = 1min.
V
CC = 1200V, VCES ≤ 1700V, VGE = 15V
T
j = 125°C
VCE = VCES, VGE = 0V, Tj = 25°C
I
C = 120mA, VCE = 10V, Tj = 25°C
V
GE = VGES, VCE = 0V, Tj = 25°C
I
C = 1200A, VGE = 15V, Tj = 25°C (Note 4)
I
C = 1200A, VGE = 15V, Tj = 125°C (Note 4)
CE = 10V, f = 100kHz
V
V
GE = 0V, Tj = 25°C
CC = 850V, IC = 1200A, VGE = 15V, Tj = 25°C
V
I
E = 1200A, VGE = 0V, Tj = 25°C (Note 4)
I
E = 1200A, VGE = 0V, Tj = 125°C (Note 4)
V
CC = 850V, IC = 1200A, VGE = ±15V
R
G(on) = 1.3Ω, Tj = 125°C, Ls = 150nH
Inductive load
V
CC = 850V, IC = 1200A, VGE = ±15V
R
G(off) = 3.3Ω, Tj = 125°C, Ls = 150nH
Inductive load
V
CC = 850V, IC = 1200A, VGE = ±15V
R
G(on) = 1.3Ω, Tj = 125°C, Ls = 150nH
Inductive load
–40 ~ +150
–40 ~ +125
–40 ~ +125
Limits
Min Typ Max
—
6.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
INSULATED TYPE
1700
±20
1200
2400
1200
2400
6500
4000
10
8.0
0.5
2.80
—
—
—
—
—
3.30
—
—
—
—
—
—
—
—
—
—
—
4
mJ/pulse
mJ/pulse
mJ/pulse
—
7.0
—
2.15
2.40
176
9.6
2.8
6.8
2.60
2.30
1.00
0.40
380
1.20
0.30
360
1.00
560
300
220
V
V
A
A
A
A
W
°C
°C
°C
V
µs
Unit
mA
V
µA
V
nF
nF
nF
µC
V
µs
µs
µs
µs
µs
A
µC
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
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4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
THERMAL CHARACTERISTICS
Symbol
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Thermal resistance
Contact thermal resistance
MECHANICAL CHARACTERISTICS
Symbol
M
CTI
d
a
d
s
L
C-E(int)
R
C-E(int)
Mounting torque
Mass
—
Comparative tracking index
Clearance distance in air
Creepage distance along surface
Internal inductance
Internal lead resistance
Item Conditions
Junction to Case, IGBT part, 1/2 module
Junction to Case, FWDi part, 1/2 module
Case to Fin, λ
Item Conditions
M8 : Main terminals screw
M6 : Mounting screw
M4 : Auxiliary terminals screw
IGBT part
C = 25°C
T
grease = 1W/m·K, 1/2 module
MITSUBISHI HVIGBT MODULES
CM1200DC-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
Limits
Min Typ Max
—
—
—
Min Typ Max
7.0
3.0
1.0
—
600
9.5
15.0
—
—
—
—
16.0
Limits
—
—
—
0.8
—
—
—
30
0.28
19.0
42.0
20.0
—
6.0
3.0
—
—
—
—
—
—
Unit
K/kW
K/kW
K/kW
Unit
N·m
kg
—
mm
mm
nH
mΩ
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
Page 4
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
MITSUBISHI HVIGBT MODULES
CM1200DC-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTPUT CHARACTERISTICS
2400
T
j
= 125°C
2000
V
GE
)
A
(
= 20V
1600
1200
800
COLLECTOR CURRENT
400
0
COLLECTOR-EMITTER VOLTAGE (V
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
5
)
V
V
GE
(
= 15V
(
TYPICAL
)
2400
V
V
GE
= 15V
V
GE
= 12V
)
A
(
CE
2000
1600
V
GE
= 10V
1200
800
COLLECTOR CURRENT
400
V
GE
= 8V
3421056
0
)
(
TYPICAL
)
5
TRANSFER CHARACTERISTICS
(
TYPICAL
)
= 20V
T
j
= 25°C
T
j
= 125°C
684201012
GATE-EMITTER VOLTAGE (V
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(
TYPICAL
)
)
4
3
2
1
T
j
= 25°C
j
= 125°C
COLLECTOR-EMITTER SATURATION VOLTAGE
0
1200 16008004000 2000 2400
COLLECTOR CURRENT (A
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
T
)
)
V
(
4
3
2
1
EMITTER-COLLECTOR VOLTAGE
0
1200 16008004000 2000 2400
EMITTER CURRENT (A
T
j
= 25°C
T
j
= 125°C
)
Jul. 2005
Page 5
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200DC-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
CAPACITANCE CHARACTERISTICS
3
10
7
5
3
2
)
2
10
nF
(
7
5
3
2
1
10
CAPACITANCE
7
5
3
2
VGE = 0V, Tj = 25°C
f = 100kHz
0
10
-1
23 57
10
COLLECTOR-EMITTER VOLTAGE (V
SWITCHING ENERGY CHARACTERISTICS
1200
VCC = 850V, VGE = ±15V
RG(on) = 1.3Ω, RG(off) = 3.3Ω
Tj = 125°C, Inductive load
1000
)
10
0
(
TYPICAL
)
23 57 23 57
10
1
HALF-BRIDGE
(
TYPICAL
)
Cies
Coes
Cres
Eon
GATE CHARGE CHARACTERISTICS
(
TYPICAL
)
20
VCC = 850V, IC = 1200A
j = 25°C
T
16
)
V
(
12
8
GATE-EMITTER VOLTAGE
4
2
10
)
0
4620810
GATE CHARGE
(µC)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(
TYPICAL
)
2000
VCC = 850V, IC = 1200A
VGE = ±15V
)
Tj = 125°C, Inductive load
1600
Eon
J/pulse
800
(m
Eoff
600
400
SWITCHING ENERGIES
200
0
1200 16008004000 2000 2400
COLLECTOR CURRENT (A
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Erec
)
J/pulse
(m
1200
800
400
SWITCHING ENERGIES
0
GATE RESISTANCE
Eoff
Erec
684201012
(Ω)
Jul. 2005
Page 6
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200DC-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME CHARACTERISTICS
1
10
VCC = 850V, V
7
R
G(on)
5
3
2
)
µs
0
10
(
7
5
3
2
-1
10
SWITCHING TIMES
7
5
3
2
-2
10
10
= 1.3Ω, R
j
= 125°C, Inductive load
T
t
d(off)
t
d(on)
2
23 57
COLLECTOR CURRENT (A
HALF-BRIDGE
(
TYPICAL
GE
= ±15V
G(off) =
10
)
3.3Ω
3
t
r
t
f
23 57
)
10
REVERSE RECOVERY CHARACTERISTICS
(
TYPICAL
)
500
FREE-WHEEL DIODE
VCC = 850V, V
G(on)
R
T
j
)
µC
(
= 125°C, Inductive load
400
= 1.3Ω
GE
= ±15V
Q
rr
300
200
100
REVERSE RECOVERY CHARGE
4
0
EMITTER CURRENT (A
1200 16008004000 2000 2400
)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
1.2
Single Pulse, T
th(j–c)Q
R
R
th(j–c)R
1.0
C
= 19K/kW
= 42K/kW
= 25°C
0.8
0.6
0.4
0.2
NORMALIZED TRANSIENT THERMAL IMPEDANCE
0
10
-3
23 57
10
-2
23 57
TIME (s
10
-1
23 57
)
10
0
23 57
10
REVERSE BIAS SAFE OPERATING AREA
(
RBSOA
)
3000
V
CC
≤ 1200V, V
j
= 125°C, R
T
GE
G(off)
= +/-15V
≥ 3.3Ω
2500
)
A
(
2000
1500
1000
COLLECTOR CURRENT
500
Module
Chip
1
0
500 10000 1500 2000
COLLECTOR-EMITTER VOLTAGE (V
)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
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