MITSUBISHI CM1200DC-34N User Guide
MITSUBISHI HVIGBT MODULES
CM1200DC-34N
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
CM1200DC-34N
● IC ................................................................ 1200A
● V
CES ....................................................... 1700V
● Insulated Type
● 2-element in a Pack
● AISiC Baseplate
● Trench Gate IGBT : CSTBT™
● Soft Reverse Recovery Diode
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
INSULA TED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
130
±0.5
57
6 - M4 NUTS
screwing depth
min. 7.7
±0.25
42
31
E1
G1
16
±0.2
40
±0.2
53
±0.2
±0.2
11.85
18
±0.2
55.2
57
±0.25
E2
C2C1
G2
44
±0.2
57
±0.2
±0.3
4 - M8 NUTS
±0.1
20
±0.5
±0.25
±0.2
30
140
124
6 - φ 7 MOUNTING HOLES
screwing depth
min. 16.5
11.5
14
±0.2
±0.2
E1
G1
C1
4(E1)
3(C1)
CIRCUIT DIAGRAM
35
±0.2
5
2(C2)
1(E2)
±0.2
C2
G2
E2
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
+1
–0
+1
±0.2
5
–0
38
28
LABEL
±0.5
29.5
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1200DC-34N
HIGH POWER SWITCHING USE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS
Symbol Item Conditions UnitRatings
V
CES
VGES
IC
ICM
IE
IEM
PC
Tj
Top
Tstg
Viso
tpsc
Collector-emitter voltage
Gate-emitter voltage
Collector current
(Note 2)
Emitter current
(Note 2)
Maximum power dissipation
(Note 3)
Junction temperature
Operating temperature
Storage temperature
Isolation voltage
Maximum short circuit pulse
width
ELECTRICAL CHARACTERISTICS
Symbol
I
CES
GE(th)
V
IGES
VCE(sat)
Cies
Coes
Cres
Qg
VEC
td(on)
tr
Eon
td(off)
tf
Eoff
trr
Irr
Qrr
Erec
Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C).
Collector cut-off current
Gate-emitter
threshold voltage
Gate leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
(Note 2)
Emitter-collector voltage
Turn-on delay time
Turn-on rise time
Turn-on switching energy
Turn-off delay time
Turn-off fall time
Turn-off switching energy
(Note 2)
Reverse recovery time
(Note 2)
Reverse recovery current
(Note 2)
Reverse recovery charge
(Note 2)
Reverse recovery energy
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
3. Junction temperature (T
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Item Conditions
j) should not exceed Tjmax rating (150°C).
V
GE = 0V, Tj = 25°C
V
CE = 0V, Tj = 25°C
T
C = 75°C
Pulse (Note 1)
Pulse (Note 1)
T
C = 25°C, IGBT part
RMS, sinusoidal, f = 60Hz, t = 1min.
V
CC = 1200V, VCES ≤ 1700V, VGE = 15V
T
j = 125°C
VCE = VCES, VGE = 0V, Tj = 25°C
I
C = 120mA, VCE = 10V, Tj = 25°C
V
GE = VGES, VCE = 0V, Tj = 25°C
I
C = 1200A, VGE = 15V, Tj = 25°C (Note 4)
I
C = 1200A, VGE = 15V, Tj = 125°C (Note 4)
CE = 10V, f = 100kHz
V
V
GE = 0V, Tj = 25°C
CC = 850V, IC = 1200A, VGE = 15V, Tj = 25°C
V
I
E = 1200A, VGE = 0V, Tj = 25°C (Note 4)
I
E = 1200A, VGE = 0V, Tj = 125°C (Note 4)
V
CC = 850V, IC = 1200A, VGE = ±15V
R
G(on) = 1.3Ω, Tj = 125°C, Ls = 150nH
Inductive load
V
CC = 850V, IC = 1200A, VGE = ±15V
R
G(off) = 3.3Ω, Tj = 125°C, Ls = 150nH
Inductive load
V
CC = 850V, IC = 1200A, VGE = ±15V
R
G(on) = 1.3Ω, Tj = 125°C, Ls = 150nH
Inductive load
–40 ~ +150
–40 ~ +125
–40 ~ +125
Limits
Min Typ Max
—
6.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
INSULATED TYPE
1700
±20
1200
2400
1200
2400
6500
4000
10
8.0
0.5
2.80
—
—
—
—
—
3.30
—
—
—
—
—
—
—
—
—
—
—
4
mJ/pulse
mJ/pulse
mJ/pulse
—
7.0
—
2.15
2.40
176
9.6
2.8
6.8
2.60
2.30
1.00
0.40
380
1.20
0.30
360
1.00
560
300
220
V
V
A
A
A
A
W
°C
°C
°C
V
µs
Unit
mA
V
µA
V
nF
nF
nF
µC
V
µs
µs
µs
µs
µs
A
µC
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
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