Mitsubishi Electric Corporation Semiconductor Group CM100TU-12H Datasheet
MITSUBISHI IGBT MODULES
CM100TU-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
A
B
G
E
F
EERHH
G
S(4 - Mounting
Holes)
K
L
D
Measured
P
N
GuP
EuP
TC
Point
5 - M4 NUTS
GuP
EuP
GuN
EuN
C
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.02 102.0
B 3.15±0.01 80.0±0.25
C 3.58 91.0
D 2.91±0.01 74.0±0.25
E 0.43 11.0
F 0.79 20.0
G 0.39 10.0
H 0.75 19.1
J 0.79 20.0
GvP
EvP
GwP
EwP
EEE
U
GvN
EvN
uvw
JJ
HH
GvP
EvP
V
GvN
EvN
Dimensions Inches Millimeters
GwP
GwN
EwN
K 0.05 1.25
L 0.74 18.7
M 1.55 39.3
N 0.12 3.05
P 0.32 8.1
Q 1.02 26.0
R 0.47 11.85
S 0.22 Dia. 5.5 Dia.
GuN
EuN
EwP
T
C
Measured
GwN
EwN
Point
M
Description:
Mitsubishi IGBT Modules are de-
K
N
signed for use in switching applications. Each module consists of six
IGBTs in a three phase bridge
configuration, with each transistor
TAB#110 t=0.5
having a reverse-connected superfast recovery free-wheel diode. All
P
components and interconnects are
isolated from the heat sinking
Q
baseplate, offering simplified system assembly and thermal management.
Features:
u Low Drive Power
u Low V
CE(sat)
u Discrete Super-Fast Recovery
W
Free-Wheel Diode
u High Frequency Operation
u Isolated Baseplate for Easy
Heat Sinking
Applications:
u AC Motor Control
u Motion/Servo Control
u UPS
u Welding Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM100TU-12H is a
600V (V
), 100 Ampere Six-
CES
IGBT Module.
Type Amperes Volts (x 50)
Current Rating V
CM 100 12
CES
Sep.1998
MITSUBISHI IGBT MODULES
CM100TU-12H
HIGH POWER SWITCHING USE
INSULA TED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM100TU-12H Units
Junction T emperature T
Storage T emperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current (Tj ≤ 150°C) I
Emitter Current** I
Peak Emitter Current** I
Maximum Collector Dissipation (Tj < 150°C) P
j
stg
CES
GES
C
CM
E
EM
c
Mounting Torque, M4 Main Terminal – 1.3 ~ 1.7 N · m
Mounting Torque, M5 Mounting – 2.5 ~ 3.5 N · m
Weight – 570 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
iso
-40 to 150 °C
-40 to 125 °C
600 Volts
±20 Volts
100 Amperes
200* Amperes
100 Amperes
200* Amperes
400 Watts
2500 Vrms
rating.
j(max)
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Voltage I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)
VCE = V
VGE = V
, VGE = 0V – – 1 mA
CES
, VCE = 0V – – 0.5 µA
GES
IC = 10mA, VCE = 10V 4.5 6 7.5 Volts
IC = 100A, VGE = 15V, Tj = 25°C – 2.4 3.0 Volts
IC = 100A, VGE = 15V, Tj = 125°C – 2.6 – Volts
Total Gate Charge Q
Emitter-Collector Voltage* V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
G
EC
VCC = 300V, IC = 100A, VGE = 15V – 200 – nC
IE = 100A, VGE = 0V – – 2.6 Volts
rating.
j(max)
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
d(on)
Load Rise Time t
Switch Turn-off Delay Time t
d(off)
Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q
ies
oes
res
r
f
rr
rr
VCE = 10V, VGE = 0V – – 4.8 nF
VCC = 300V, IC = 100A, – – 100 ns
V
= V
GE1
= 15V, – – 250 ns
GE2
RG = 6.3Ω, Resistive – – 200 ns
Load Switching Operation – – 300 ns
IE = 100A, diE/dt = -200A/µs – – 160 µC
IE = 100A, diE/dt = -200A/µs – 0.24 – µC
– – 8.8 nF
– – 1.3 nF
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R
Q Per IGBT 1/6 Module – – 0.31 °C/W
th(j-c)
D Per Free-Wheel Diode 1/6 Module – – 0.7 °C/W
th(j-c)
th(c-f)
Per Module, Thermal Grease Applied – 0.018 – °C/W
Sep.1998
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