Mitsubishi Electric Corporation Semiconductor Group CM100TF-24H Datasheet
MITSUBISHI IGBT MODULES
CM100TF-24H
HIGH POWER SWITCHING USE
INSULA TED TYPE
B
D
QQ
XXX
N
S
Z - M5 THD
(7 TYP.)
U
u
PGvPGwP
u
PEvPEwP
E
G
P
G
E
u
NGvNGwN
u
NEvNEwN
J
K
AA M
H
UVW
N
M
P
GuP
EuP
U
GuN
EuN
N
P
R
P
N
L
C A
E
F
T
G
Description:
Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of
M
Y - DIA.
AAM
(4 TYP.)
TAB #110, t = 0.5
six IGBTs in a three phase bridge
configuration, with each transistor
having a reverse-connected superfast recovery free-wheel diode. All
components and interconnects are
isolated from the heat sinking
baseplate, offering simplified sys-
V
tem assembly and thermal management.
GvP
EvP
V
GvN
EvN
GwP
EwP
W
GwN
EwN
P
N
Features:
u Low Drive Power
u Low V
CE(sat)
u Discrete Super-Fast Recovery
Free-Wheel Diode
u High Frequency Operation
u Isolated Baseplate for Easy
Heat Sinking
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.21 107.0
B 4.02 102.0
C 3.543±0.01 90.0±0.25
D 3.15±0.01 80.0±0.25
E 2.01 51.0
F 1.38 35.0
G 1.28 32.5
H 1.26 Max. 32.0 Max
J 1.18 30.0
K 0.98 25.0
L 0.96 24.5
M 0.79 20.0
N 0.67 17.0
Dimensions Inches Millimeters
P 0.57 14.5
Q 0.55 14.0
R 0.47 12.0
S 0.43 11.0
T 0.39 10.0
U 0.33 8.5
V 0.30 7.5
X 0.24 6.0
Y 0.22 5.5
Z M5 Metric M5
AA 0.08 2.0
Applications:
u AC Motor Control
u Motion/Servo Control
u UPS
u Welding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM100TF-24H
is a 1200V (V
), 100 Ampere
CES
Six-IGBT Module.
Type Current Rating V
Amperes Volts (x 50)
CM 100 24
CES
Sep.1998
MITSUBISHI IGBT MODULES
CM100TF-24H
HIGH POWER SWITCHING USE
INSULA TED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM100TF-24H Units
Junction T emperature T
Storage T emperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (TC = 25°C) I
Peak Collector Current I
Emitter Current** (TC = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) P
j
stg
CES
GES
C
CM
E
EM
c
Mounting Torque, M5 Main Terminal – 1.47 ~ 1.96 N · m
Mounting Torque, M5 Mounting – 1.47 ~ 1.96 N · m
Weight – 830 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
j(max)
iso
rating.
–40 to 150 °C
–40 to 125 °C
1200 Volts
±20 Volts
100 Amperes
200* Amperes
100 Amperes
200* Amperes
780 Watts
2500 Vrms
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. T yp. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)
VCE = V
VGE = V
, VGE = 0V – – 1.0 mA
CES
, VCE = 0V – – 0.5 µA
GES
IC = 10mA, VCE = 10V 4.5 6.0 7.5 Volts
IC = 100A, VGE = 15V – 2.5 3.4** Volts
IC = 100A, VGE = 15V, Tj = 150°C – 2.25 – Volts
Total Gate Charge Q
Emitter-Collector Voltage V
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
G
EC
VCC = 600V, IC = 100A, VGE = 15V – 500 – nC
IE = 100A, VGE = 0V – – 3.5 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. T yp. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay T ime t
d(on)
Load Rise Time t
Switching Turn-off Delay Time t
d(off)
Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q
ies
oes
res
r
f
rr
rr
VGE = 0V, VCE = 10V – – 7 nF
VCC = 600V, IC = 100A, – – 350 ns
V
GE1
= V
= 15V, RG = 3.1Ω – – 300 ns
GE2
IE = 100A, diE/dt = –200A/µs – – 250 ns
IE = 100A, diE/dt = –200A/µs – 0.74 – µC
– – 20 nF
– – 4 nF
– – 250 ns
– – 350 ns
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. T yp. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R
th(j-c)
th(j-c)
th(c-f)
Per Module, Thermal Grease Applied – – 0.025 °C/W
Per IGBT – – 0.16 °C/W
Per FWDi – – 0.35 °C/W
Sep.1998
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