Mitsubishi Electric Corporation Semiconductor Group CM100TF-12H Datasheet

MITSUBISHI IGBT MODULES

CM100TF-12H

HIGH POWER SWITCHING USE

INSULATED TYPE

A

D

Z - M4 THD
(7 TYP.)

G

U

C

QXQ

X

GuPEuPGvPEvPGwPEwP

G

uNEu

P

N

N

NGvNEvNGwNEwN

UVW

XN

S

P

P

G

N

R

T

J

K

B

E

P

GuP

GuN

N

AA

TAB #110, t = 0.5

F

H

EuP

EuN

U

L

GvP

GvN

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 4.02±0.02 102±0.5
B 3.58±0.02 91.0±0.5
C 3.15±0.01 80.0±0.25
D 2.913±0.01 74.0±0.25
E 1.69 43.0
F 1.18+0.06/-0.02 30.0+1.5/-0.5
G 1.18 30.0
H 1.16 29.5

J 1.06 27.0
K 0.96 24.5
L 0.87 22.0
M 0.79 20.0
N 0.67 17.0

M M

EvP

EvN

V

AA

L

GwP

GwN

Y DIA. (4 TYP.)

V

AB

EwP

EwN

W

Dimensions Inches Millimeters

P 0.65 16.5
Q 0.55 14.0
R 0.47 12.0
S 0.43 11.0
T 0.39 10.0
U 0.33 8.5
V 0.32 8.1
X 0.24 6.0
Y 0.22 Dia. Dia. 5.5

Z M4 Metric M4
AA 0.08 2.0
AB 0.28 7.0

Description:

Mitsubishi IGBT Modules are de­signed for use in switching applica­tions. Each module consists of six
IGBTs in a three phase bridge con­figuration, with each transistor
having a reverse-connected super­fast recovery free-wheel diode. All
components and interconnects are
isolated from the heat sinking

P

baseplate, offering simplified sys­tem assembly and thermal man­agement.

Features:

u Low Drive Power
u Low V

CE(sat)

u Discrete Super-Fast Recovery

N

Free-Wheel Diode

u High Frequency Operation
u Isolated Baseplate for Easy

Heat Sinking

Applications:

u AC Motor Control
u Motion/Servo Control
u UPS
u Welding Power Supplies

Ordering Information:

Example: Select the complete part
module number you desire from
the table below -i.e. CM100TF-12H
is a 600V (V

), 100 Ampere

CES

Six-IGBT Module.

Type Current Rating V

Amperes Volts (x 50)

CM 100 12

CES

Sep.1998

MITSUBISHI IGBT MODULES

CM100TF-12H

HIGH POWER SWITCHING USE

INSULATED TYPE

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM100TF-12H Units
Junction Temperature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (TC = 25°C) I
Peak Collector Current I
Emitter Current** (TC = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) P

j

stg
CES
GES

C
CM

E

EM

c

Mounting Torque, M4 Main Terminal – 0.98 ~ 1.47 N · m
Mounting Torque, M5 Mounting – 1.47 ~ 1.96 N · m
Weight – 540 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

iso

j(max)

rating.

–40 to 150 °C
–40 to 125 °C

600 Volts
±20 Volts
100 Amperes

200* Amperes

100 Amperes

200* Amperes

400 Watts

2500 Vrms

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V

CES
GES

GE(th)

CE(sat)

VCE = V
VGE = V

, VGE = 0V – – 1.0 mA

CES

, VCE = 0V – – 0.5 µA

GES

IC = 10mA, VCE = 10V 4.5 6.0 7.5 Volts

IC = 100A, VGE = 15V – 2.1 2.8** Volts

IC = 100A, VGE = 15V, Tj = 150°C – 2.15 – Volts
Total Gate Charge Q
Emitter-Collector Voltage V

** Pulse width and repetition rate should be such that device junction temperature rise is negligible.

G

EC

VCC = 300V, IC = 100A, VGE = 15V – 300 – nC

IE = 100A, VGE = 0V – – 2.8 Volts

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t

d(on)

Load Rise Time t
Switching Turn-off Delay Time t

d(off)

Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q

ies

oes

res

rr

VGE = 0V, VCE = 10V – – 3.5 nF

r

f

VCC = 300V, IC = 100A, – – 300 ns

V

= V

GE1

= 15V, RG = 6.3Ω – – 200 ns

GE2

IE = 100A, diE/dt = –200A/µs – – 110 ns

rr

IE = 100A, diE/dt = –200A/µs – 0.27 – µC

– – 10 nF

– – 2 nF
– – 120 ns

– – 300 ns

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R

th(j-c)
th(j-c)
th(c-f)

Per Module, Thermal Grease Applied – – 0.033 °C/W

Per IGBT – – 0.31 °C/W

Per FWDi – – 0.70 °C/W

Sep.1998

MITSUBISHI IGBT MODULES

CM100TF-12H

HIGH POWER SWITCHING USE

INSULATED TYPE

OUTPUT CHARACTERISTICS

(TYPICAL)

200

Tj = 25oC

VGE = 20V

15

12

150

, (AMPERES)

C

11

100

10

50

COLLECTOR CURRENT, I

0

0246810

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

SATURATION VOLTAGE CHARACTERISTICS

COLLECTOR-EMITTER

(TYPICAL)

9

7

8

10

Tj = 25°C

8

, (VOLTS)

CE(sat)

6

IC = 200A

IC = 100A

4

COLLECTOR-EMITTER

2

SATURATION VOLTAGE, V

0

0 4 8 12 16 20

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

3

10

Tj = 125°C

7

(TYPICAL)

IC = 40A

5
3

2

2

10

t

d(on)

7
5

SWITCHING TIME, (ns)

3
2

1

10

0

23 5710

10

COLLECTOR CURRENT, IC, (AMPERES)

t

r

VCC = 300V

GE

V

G

= 6.3Ω

R

1

23 5710

= ±15V

t
t

f

d(off)

200

150

, (AMPERES)

C

100

50

COLLECTOR CURRENT, I

10

, (AMPERES)

E

10

EMITTER CURRENT, I

10

10

, (ns)

rr

10

REVERSE RECOVERY TIME, t

2

10

TRANSFER CHARACTERISTICS

(TYPICAL)

VCE = 10V

Tj = 25°C

= 125°C

T

j

0

0 4 8 12 16 20

GATE-EMITTER VOLTAGE, VGE, (VOLTS)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

3

Tj = 25°C

2

1

0 0.8 1.6 2.4 3.2 4.0

EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)

REVERSE RECOVERY CHARACTERISTICS

3

–di/dt = 200A/µs

7

T

= 25°C

j

5

(TYPICAL)

(TYPICAL)

3
2

2

7
5

3
2

1

0

23 5710

10

EMITTER CURRENT, IE, (AMPERES)

1

23 5

COLLECTOR-EMITTER

SATURATION VOLTAGE CHARACTERISTICS

(TYPICAL)

5

VGE = 15V

Tj = 25°C

= 125°C

4

, (VOLTS)

CE(sat)

3

T

j

2

COLLECTOR-EMITTER

1

SATURATION VOLTAGE, V

0

0 50 100 150 200

COLLECTOR-CURRENT, IC, (AMPERES)

CAPACITANCE VS. V

2

10

, (nF)

res

1

10

, C

oes

, C

ies

0

10

CAPACITANCE, C

VGE = 0V

-1

10

-1

10

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

2

10
7

5
3

2

10

t

rr

7

l

rr

5
3

2
10

2

7

10

20

IC = 100A

16

, (AMPERES)

, (VOLTS)

rr

GE

12

1

8

4

GATE-EMITTER VOLTAGE, V

REVERSE RECOVERY CURRENT, I

0

0

0 100 200 300 400 500

(TYPICAL)

0

10

GATE CHARGE, V

VCC = 200V

GATE CHARGE, QG, (nC)

CE

1

10

GE

VCC = 300V

C

ies

C

oes

C

res

2

10

Sep.1998

MITSUBISHI IGBT MODULES

CM100TF-12H

HIGH POWER SWITCHING USE

INSULATED TYPE

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

-3

10

1

10

th(j-c)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

Single Pulse
T

= 25°C

C

Per Unit Base = R

0

10

-1

10

• (NORMALIZED VALUE)

th

-2

= R

10

th

Z

-3

10

(IGBT)

-2

10

-1

10

th(j-c)

-5

10

TIME, (s)

10

= 0.31°C/W

10

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

0

-4

1

10

-1

10

-2

10

-3

10

-3

10

-3

10

1

10

th(j-c)

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

Single Pulse
T

= 25°C

C

Per Unit Base = R

0

10

-1

10

• (NORMALIZED VALUE)

th

-2

= R

10

th

Z

-3

10

(FWDi)

-2

10

-1

10

th(j-c)

-5

10

TIME, (s)

10

= 0.7°C/W

10

0

-4

1

10

-1

10

-2

10

-3

10

-3

10

Sep.1998