MITSUBISHI CM100RX-24S User Manual

CM100RX-24S

- 6th Generation NX series -

MITSUBISHI IGBT MODULES

CM100RX-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

Collector current IC .............…............…

Collector-emitter voltage V

Maximum junction temperature T

●Flat base Type

●Copper base plate (non-plating)

●Tin plating pin terminals

●RoHS Directive compliant

sevenpack (3φ inverter+Brake)

APPLICATION

AC Motor Control, Motion/Servo Control, etc.

OUTLINE DRAWING & INTERNAL CONNECTION

●UL Recognized under UL1557, File E323585

...........…

CES

jmax

100

1200

...

175

Dimension in mm

TERMINAL

A

V

°C

P(35)

N(36)

B(4 )

GB(6)

EsB(5)

INTERNAL CONNECTION

GUP(34)

EsUP(33)

GUN(30)

EsUN(29) EsVN(21) EsWN(13)

U(1)

GVP(26)

EsVP(25)

GVN(22)

GWP(18)

EsWP(17)

V(2)

GWN(14)

W(3)

NTC

TH1(11)

TH2(10 )

SECTION A

Tolerance otherwise specified

Division of Dimension Tolerance

0.5 to 3 ±0.2

over 3 to 6 ±0.3

over 6 to 30 ±0.5

over 30 to 120 ±0.8

over 120 to 400 ±1.2

The Tolerance of size between
terminals is assumed to be ±0.4.

t=0.8

1

Apr. 2011

MITSUBISHI IGBT MODULES

CM100RX-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

ABSOLUTE MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified)

INVERTER PART IGBT/FWDi

Symbol Item Conditions Rating Unit

V

Collector-emitter voltage G-E short-circuited 1200 V

CES

V

Gate-emitter voltage C-E short-circuited ±20 V

GES

IC DC, TC=119 °C

I

CRM

P

Total power dissipation TC=25 °C

tot

IE

I

ERM

(Note.1)

(Note.1)

Collector current

Emitter current

(Note.3)

Pulse

TC=25 °C

(Note.3)

Pulse

BRAKE PART IGBT/CLAMPDi

Symbol Item Conditions Rating Unit

V

Collector-emitter voltage G-E short-circuited 1200 V

CES

V

Gate-emitter voltage C-E short-circuited ±20 V

GES

IC DC, TC=125 °C

I

CRM

P

Total power dissipation TC=25 °C

tot

V

Repetitive peak reverse voltage G-E short-circuited 1200 V

RRM

IF

I

FRM

(Note.1)

(Note.1)

Collector current

Forward current

(Note.3)

Pulse

TC=25 °C

(Note.3)

Pulse

MODULE

Symbol Item Conditions Rating Unit

T

Maximum junction temperature - 175

jmax

T

Maximum case temperature

Cmax

T

Operating junction temperature - -40 ~ +150

jop

T

Storage temperature - -40 ~ +125

stg

V

Isolation voltage Terminals to base plate, RMS, f=60 Hz, AC 1 min 2500 V

isol

(Note.2)

125

(Note.2)

100

200

(Note.2, 4)

750 W

(Note.2, 4)

100

200

(Note.2)

50

100

(Note.2, 4)

425 W

(Note.2, 4)

50

100

A

A

A

A

°C

°C

ELECTRICAL CHARACTERISTICS (Tj=25 °C, unless otherwise specified)

INVERTER PART IGBT/FWDi

Symbol Item Conditions

I

Collector-emitter cut-off current VCE=V

CES

I

Gate-emitter leakage current VGE=V

GES

V

Gate-emitter threshold voltage IC=10 mA, VCE=10 V 5.4 6.0 6.6 V

GE(th)

I

V

CEsat

(Terminal)

V

CEsat

(Chip)

C

ies

C

oes

C

res

Collector-emitter saturation voltage

Collector-emitter saturation voltage

Input capacitance - - 10

Output capacitance - - 2.0

Reverse transfer capacitance

C

V

I

C

V

V

, G-E short-circuited - - 1 mA

CES

, C-E short-circuited - - 0.5 μA

GES

=100 A

GE

=100 A

GE

CE

(Note.5)

,

=15 V

(Note.5)

,

=15 V

=10 V, G-E short-circuited

Tj=25 °C - 1.80 2.25

Tj=125 °C - 2.00 -

=150 °C - 2.05 -

T

j

Tj=25 °C - 1.70 2.15

Tj=125 °C - 1.90 -

=150 °C - 1.95 -

T

j

Min. Typ. Max.

- - 0.17

QG Gate charge VCC=600 V, IC=100 A, VGE=15 V - 233 - nC

t

Turn-on delay time - - 300

d(on)

tr Rise time

t

Turn-off delay time - - 600

d(off)

tf Fall time

(Note.1)

VEC

(Terminal)

VEC

(Chip)

Emitter-collector voltage

(Note.1)

Emitter-collector voltage

V

=600 V, IC=100 A, VGE=±15 V,

CC

=6.2 Ω, Inductive load

R

G

I

=100 A

E

(Note.5)

,

G-E short-circuited

I

=100 A

E

(Note.5)

,

G-E short-circuited

- - 200

- - 300

Tj=25 °C - 1.8 2.25

Tj=125 °C - 1.8 -

=150 °C - 1.8 -

T

j

Tj=25 °C - 1.7 2.15

Tj=125 °C - 1.7 -

=150 °C - 1.7 -

T

j

Limits

Unit

V

V

nF

ns

V

V

2

Apr. 2011

MITSUBISHI IGBT MODULES

CM100RX-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

ELECTRICAL CHARACTERISTICS (cont.; Tj=25 °C, unless otherwise specified)

INVERTER PART IGBT/FWDi

Symbol Item Conditions

(Note.1)

trr

Reverse recovery time VCC=600 V, IE=100 A, VGE=±15 V, - - 300 ns

(Note.1)

Qrr

Reverse recovery charge RG=6.2 Ω, Inductive load - 5.3 - μC

Min. Typ. Max.

Eon Turn-on switching energy per pulse VCC=600 V, IC=IE=100 A, - 8.6 -

E

Turn-off switching energy per pulse VGE=±15 V, RG=6.2 Ω, Tj=150 °C, - 10.7 -

off

(Note.1)

Err

R

Reverse recovery energy per pulse Inductive load - 10.2 - mJ

Internal lead resistance

CC'+EE'

Main terminals-chip, per switch,

=25 °C

T

C

(Note.2)

- - 2.2 mΩ

rg Internal gate resistance Per switch - 0 - Ω

BRAKE PART IGBT/CLAMPDi

Symbol Item Conditions

I

Collector-emitter cut-off current VCE=V

CES

I

Gate-emitter leakage current VGE=V

GES

V

Gate-emitter threshold voltage IC=5 mA, VCE=10 V 5.4 6.0 6.6 V

GE(th)

I

V

CEsat

(Terminal)

V

CEsat

(Chip)

C

ies

C

oes

C

res

Collector-emitter saturation voltage

Collector-emitter saturation voltage

Input capacitance - - 5.0

Output capacitance - - 1.0

Reverse transfer capacitance

C

V

I

C

V

V

, G-E short-circuited - - 1 mA

CES

, C-E short-circuited - - 0.5 μA

GES

(Note.5)

=50 A

=15 V

GE

=50 A

=15 V

GE

=10 V, G-E short-circuited

CE

(Note.5)

,

,

Tj=25 °C - 1.80 2.25

Tj=125 °C - 2.00 -

=150 °C - 2.05 -

T

j

Tj=25 °C - 1.70 2.15

Tj=125 °C - 1.90 -

=150 °C - 1.95 -

T

j

QG Gate charge VCC=600 V, IC=50 A, VGE=15 V - 117 - nC

t

Turn-on delay time - - 300

d(on)

tr Rise time

t

Turn-off delay time - - 600

d(off)

tf Fall time

I

Repetitive peak reverse current VR=V

RRM

V

F

(Terminal)

V

F

(Chip)

Forward voltage

Forward voltage

V

=600 V, IC=50 A, VGE=±15 V,

CC

=13 Ω, Inductive load

R

G

, G-E short-circuited - - 1 mA

RRM

I

=50 A

F

(Note.5)

,

G-E short-circuited

I

=50 A

F

(Note.5)

,

G-E short-circuited

Tj=25 °C - 1.8 2.25

Tj=125 °C - 1.8 -

=150 °C - 1.8 -

T

j

Tj=25 °C - 1.7 2.15

Tj=125 °C - 1.7 -

=150 °C - 1.7 -

T

j

trr Reverse recovery time VCC=600 V, IF=50 A, VGE=±15 V, - - 300 ns

Qrr Reverse recovery charge RG=13 Ω, Inductive load - 2.7 - μC

Eon Turn-on switching energy per pulse VCC=600 V, IC=IF=50 A, - 5.5 -

E

Turn-off switching energy per pulse VGE=±15 V, RG=13 Ω, Tj=150 °C, - 5.3 -

off

Err Reverse recovery energy per pulse Inductive load - 4.5 - mJ

rg Internal gate resistance - - 0 - Ω

Min. Typ. Max.

- - 0.08

- - 200

- - 300

NTC THERMISTOR PART

Symbol Item Conditions

R25 Zero power resistance TC=25 °C

ΔR/R Deviation of resistance TC=100 °C, R

B

B constant Approximate by equation

(25/50)

P25 Power dissipation TC=25 °C

(Note.2)

4.85 5.00 5.15 kΩ

=493 Ω -7.3 - +7.8 %

100

(Note.2)

- - 10 mW

(Note.6)

- 3375 - K

Min. Typ. Max.

Limits

Limits

Unit

mJ

Unit

V

V

nF

ns

V

V

mJ

Limits

Unit

3

Apr. 2011

MITSUBISHI IGBT MODULES

CM100RX-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

THERMAL RESISTANCE CHARACTERISTICS

Symbol Item Conditions

R

Junction to case, per Inverter IGBT - - 0.20

th(j-c)Q

R

Junction to case, per Inverter FWDi - - 0.29

th(j-c)D

R

th(j-c)Q

R

th(j-c)D

R

th(c-s)

Thermal resistance

Junction to case, per Brake IGBT - - 0.35

Contact thermal resistance

(Note. 2)

(Note.2)

Junction to case, per Brake ClampDi - - 0.63

Case to heat sink, per 1 module,
Thermal grease applied

(Note.7)

Min. Typ. Max.

- 15 - K/kW

Limits

Unit

K/W

K/W

MECHANICAL CHARACTERISTICS

Symbol Item Conditions

Mt Main terminals M 5 screw 2.5 3.0 3.5

Ms

ds Creepage distance

da Clearance

Mounting torque

Mounting to heat sink M 5 screw 2.5 3.0 3.5

Terminal to terminal 10.25 - -

Terminal to base plate 12.32 - -

Terminal to terminal 10.28 - -

Terminal to base plate 10.85 - -

Min. Typ. Max.

m Weight - - 370 - g

ec Flatness of base plate On the centerline X, Y

(Note.8)

±0 - +100 μm

Note.1: Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).
Note.2: Case temperature (T

) and heat sink temperature (Ts) are defined on the each surface (mounting side) of base plate

C

and heat sink just under the chips. Refer to the figure of chip location.

The heat sink thermal resistance should measure just under the chips.
Note.3: Pulse width and repetition rate should be such that the device junction temperature (T
Note.4: Junction temperature (T

) should not increase beyond T

j

jmax

rating.

j

Note.5: Pulse width and repetition rate should be such as to cause negligible temperature rise.

Refer to the figure of test circuit.

Note.6:

R

25

/()

ln(B

)/(

5025

R

R

: resistance at absolute temperature T25 [K]; T25=25 [°C]+273.15=298.15 [K]

25

R

: resistance at absolute temperature T50 [K]; T50=50 [°C]+273.15=323.15 [K]

50

11



)

,

TT

502550

Note.7: Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
Note.8: The base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure.

Y

mounting side

-:Concave

mounting side

+:Convex

-:Concave
X

Limits

) dose not exceed T

jmax

Unit

N·m

mm

mm

rating.

mounting side

+:Convex

Note.9: Japan Electronics and Information Technology Industries Association (JEITA) standards,

"EIAJ ED-4701/300: Environmental and endurance test methods for semiconductor devices (Stress test I)"

Note.10: Use the following screws when mounting the printed circuit board (PCB) on the stand offs.

"M2.6×10 or M2.6×12 self tapping screw"
The length of the screw depends on the thickness of the PCB.

RECOMMENDED OPERATING CONDITIONS (Ta=25 °C, unless otherwise specified)

Symbol Item Conditions

Min. Typ. Max.

VCC DC supply voltage Applied across P-N terminals - 600 850 V

V

Gate-emitter drive voltage

GEon

RG External gate resistance Per switch

Applied across GB-EsB /

G*P-Es*P, G*N-Es*N terminals

Inverter IGBT 6.2 - 62

13.5 15.0 16.5 V

Brake IGBT 13 - 130

4

Limits

Unit

Ω

Apr. 2011

MITSUBISHI IGBT MODULES

CHIP LOCATION (top view)

Tr*P/Tr*N/TrBr: IGBT, Di*P/Di*N: FWDi, DiBr: ClampDi, Th: NTC thermistor.

TEST CIRCUIT AND WAVEFORMS

0 V

+V

-VGE

R

G

GE

VGE

-V

GE

Switching characteristics test circuit and waveforms trr, Qrr test waveform

iE

Load

VCE

+

i

C

vCE

I

CM

VCC

iC

CM100RX-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

Dimension in mm, Tolerance: ±1 mm

v

GE

0 V

V

i

CC

C

～

～

90 %

Q

i

0

E

t

IE

～

～

90 %

0 A

=0.5×Irr×t

rr

t

rr

Irr

0 A

t

d(on)

t

r

t

d(off)

t

f

10%

t

i

i

C

V

CC

ICM

v

CE

E

0 A

IEM

v

EC

rr

0.5×I

t

rr

V

CC

t

0.1×I

0

CM

0.1×VCC
t

ti

IGBT Turn-on switching energy IGBT Turn-off switching energy FWDi Reverse recovery energy

0.1×V

CC

t

i

0.02×I

CM

t0

t0 V

ti

Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing)

5

Apr. 2011

MITSUBISHI IGBT MODULES

TEST CIRCUIT

VGE=15 V

circ uited

VGE=15 V

V

Short-

circui ted

Short-

GUP

EsUP

GUN

EsUN

34

33

30

35

1

CM100RX-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

P

VGE=15 V

I

C

U

N

V

Short-

circui ted

GVP

EsVP

GVN

EsVN

Short-

circ uited

26

V

VGE=15 V

IC

25

22

P

V

N

35

2

P

VGE=15 V

I

C

circuited

V

V

Short-

circui ted

Short-

GWP

EsWP

GWN

EsWN

35

18

17

I

C

W

N

V

3

VGE=15 V

I

C

14

I

VGE=15 V

C

GB

P

B

V

I

C

Gate-emitter

short-circuited

Short-

circuited

V

Short-

circuited

Short-

circ uited

Short-

circ uited

29

GVP-EsVP GVN-EsVN,
GWP-EsWP, GW N-EsWN,
GB-EsB

36

UP / UN IGBT

34

33

30

29

GUP

EsUP

GUN

P

U

21

Gate-emitter

short-circuited

GUP-EsUP, GUN-EsUN,
GWP-EsWP, GW N-EsWN,
GB-EsB

VP / VN IGBT

36

Gate-emitter

short-circuited

V

test circuit

CEsat

35

IE

1

36

Short-

circuited

V

Short-

circuited

26

25

22

21

Short-

circ uited

GVP

V

IE

Short-

circ uited

EsVP

GVN

35

I

E

2

36

P

V

V

I

E

WP / WN IGBT

Short-

circuited

V

Short-

circuited

Short-

circuited

Short-

circuited

13

GUP-EsUP, GUN-EsUN,
GVP-EsVP, GVN-EsVN,
GB-EsB

18

17

14

13

36

35

3

36

P

GWP

EsW P

W

GWN

short-circuited

I

E

V

I

E

EsB

Gate-emitter

Short-

circuited

6

5

N

GUP-EsUP, GUN-EsUN,
GVP-EsVP, GVN-EsVN,
GWP-EsWP, GW N-EsWN

Brake IGBT

35

4

36

V

IF

Gate-emitter

short-circuited

EsUN

GVP-EsVP GVN-EsVN,
GWP-EsWP, GW N-EsWN,
GB-EsB

N

short-circuited

UP / UN FWDi VP / VN FWDi WP / WN FWDi

EsVN

Gate-emitter

N

GUP-EsUP, GUN-EsUN,
GWP-EsWP, GW N-EsWN,
GB-EsB

Gate-emitter
short-circuited

EsWN

GUP-EsUP, GUN-EsUN,
GVP-EsVP, GVN-EsVN,
GB-EsB

N

Gate-emitter

short-circuited

GUP-EsUP, GUN-EsUN,
GVP-EsVP, GVN-EsVN,
GWP-EsWP, GW N-EsWN

Brake ClampDi

VEC / VF test circuit

6

Apr. 2011

MITSUBISHI IGBT MODULES

PERFORMANCE CURVES

INVERTER PART

200

150

(A)

C

100

50

COLLECTOR CURRENT I

VGE=20 V

OUTPUT CHARACTERISTICS

(TYPICAL)

Tj=25 °C

13.5 V

15 V

12 V

11 V

10 V

9 V

(Chip)

CM100RX-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

COLLECTOR-EMITTER SATURATION VOLTAGE

3.5

(V)

2.5

CE

1.5

COLLECTOR-EMITTER

VGE=15 V

3

2

1

SATURATION VOLTAGE V

0.5

CHARACTERISTICS

(TYPICAL)

Tj=125 °C

(Chip)

Tj=150 °C

Tj=25 °C

0

0246810

0

0 50 100 150 200

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)

COLLECTOR-EMITTER SATURATION VOLTAGE

CHARACTERISTICS

10

(V)

CE

Tj=25 °C

8

6

4

(TYPICAL)

COLLECTOR-EMITTER

2

SATURATION VOLTAGE V

IC=200 A

IC=100 A

IC=40 A

(Chip)

1000

(A)

100

E

10

EMITTER CURRENT I

Tj=150 °C

FREE WHEELING DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

G-E short-circuited

Tj=125 °C

Tj=25 °C

(Chip)

0

6 8 10 12 14 16 18 20

1

0 0.5 1 1.5 2 2.5 3

COLLECTOR CURRENT IC (A) EMITTER-COLLECTOR VOLTAGE VEC (V)

7

Apr. 2011

MITSUBISHI IGBT MODULES

1000

100

10

SWITCHING TIME (ns)

SWITCHING CHARACTERISTICS

HALF-BRIDGE

(TYPICAL)

VCC=600 V, VGE=±15 V, RG=6.2 Ω,

--------------- : T

=150 °C, - - - - -: Tj=125 °C

j

t

d(off)

tf

t

d(on)

tr

SWITCHING CHARACTERISTICS

VCC=600 V, VGE=±15 V, IC=100 A,

1000

100

--------------- : T

SWITCHING TIME (ns)

CM100RX-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

HALF-BRIDGE

(TYPICAL)

=150 °C, - - - - -: Tj=125 °C

j

t

f

t

d(off)

t

d(on)

t

r

1

1 10 100

10

1 10 100

COLLECTOR CURRENT IC (A) GATE RESISTANCE RG (Ω)

SWITCHING ENERGY (mJ)

100

SWITCHING CHARACTERISTICS

SWITCHING CHARACTERISTICS

(TYPICAL)

HALF-BRIDGE

VCC=600 V, VGE=±15 V, RG=6.2 Ω,

--------------- : T

10

1

=150 °C, - - - - -: Tj=125 °C

j

Err

E

off

Eon

100

10

VCC=600 V, VGE=±15 V, IC=100 A,

--------------- : T

SWITCHING ENERGY (mJ)

HALF-BRIDGE

(TYPICAL)

=150 °C, - - - - -: Tj=125 °C

j

E

on

E

off

E

rr

REVERSE RECOVERY ENERGY (mJ)

0.1
1 10 100

COLLECTOR CURRENT IC (A)

EMITTER CURRENT I

(A)

E

8

REVERSE RECOVERY ENERGY (mJ)

1

1 10 100

GATE RESISTANCE R

G

(Ω)

Apr. 2011

MITSUBISHI IGBT MODULES

100

10

1

CAPACITANCE (nF)

0.1

CAPACITANCE CHARACTERISTICS

(TYPICAL)

G-E short-circuited, Tj=25 °C

CM100RX-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

REVERSE RECOVERY CHARACTERISTICS

1000

C

ies

(A)

rr

C

oes

C

res

100

(ns), I

rr

t

FREE WHEELING DIODE

(TYPICAL)

VCC=600 V, VGE=±15 V, RG=6.2 Ω,

--------------- : T

=150 °C, - - - - -: Tj=125 °C

j

Irr

trr

0.01

0.1 1 10 100

10

1 10 100

COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER CURRENT IE (A)

TRANSIENT THERMAL IMPEDANCE

CHARACTERISTICS

(MAXIMUM)

Single pulse, TC=25 °C

1

0.1

20

15

(V)

GE

10

5

GATE-EMITTER VOLTAGE V

GATE CHARGE CHARACTERISTICS

(TYPICAL)

VCC=600 V, IC=100 A, Tj=25 °C

th(j-c)

Z

0.01

0.001

0

0 100 200 300 400

NORMALIZED TRANSIENT THERMAL RESISTANCE

0.00001 0.0001 0.001 0.01 0.1 1 10

R

=0.20 K/W, R

th(j-c)Q

th(j-c)D

=0.29 K/W

GATE CHARGE QG (nC) TIME (S)

9

Apr. 2011

MITSUBISHI IGBT MODULES

BRAKE PART

3.5

(V)

2.5

CEsat

1.5

COLLECTOR-EMITTER

SATURATION VOLTAGE V

0.5

COLLECTOR-EMITTER SATURATION

VGE=15 V

3

2

1

VOLTAGE CHARACTERISTICS

(TYPICAL)

Tj=150 °C

Tj=125 °C

Tj=25 °C

(Chip)

100

(V)

F

10

FORWARD VOLTAGE V

CM100RX-24S

HIGH POWER SWITCHING USE

CLAMP DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

G-E short-circuited

Tj=150 °C

Tj=25 °C

Tj=125 °C

INSULATED TYPE

(Chip)

0

0 20406080100

1

00.511.522.53

COLLECTOR CURRENT IC (A) FORWARD CURRENT IF (A)

SWITCHING CHARACTERISTICS

HALF-BRIDGE

(TYPICAL)

VCC=600 V, VGE=±15 V, RG=13 Ω, INDUCTIVE LOAD

1000

100

--------------- : T

10

SWITCHING TIME (ns)

=150 °C, - - - - -: Tj=125 °C

j

tf

t

d(on)

tr

t

d(off)

SWITCHING CHARACTERISTICS

VCC=600 V, IC=50 A, VGE=±15 V, INDUCTIVE LOAD

1000

100

--------------- : T

t

f

t

d(off)

t

d(on)

SWITCHING TIME (ns)

t

r

HALF-BRIDGE

(TYPICAL)

=150 °C, - - - - -: Tj=125 °C

j

1

1 10 100

10

10 100 1000

COLLECTOR CURRENT IC (A) EXTERNAL GATE RESISTANCE RG (Ω)

10

Apr. 2011

MITSUBISHI IGBT MODULES

CM100RX-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

10

1

SWITCHING CHARACTERISTICS

VCC=600 V, VGE=±15 V, RG=13 Ω,

INDUCTIVE LOAD, PER PULSE

--------------- : T

HALF-BRIDGE

(TYPICAL)

=150 °C, - - - - -: Tj=125 °C

E

off

Eon

j

E

rr

100

10

SWITCHING CHARACTERISTICS

HALF-BRIDGE

(TYPICAL)

VCC=600 V, IC/IF=50 A, VGE=±15 V,

INDUCTIVE LOAD, PER PULSE

--------------- : T

=150 °C, - - - - -: Tj=125 °C

j

Eon

E

off

SWITCHING ENERGY (mJ)

REVERSE RECOVERY ENERGY (mJ)

0.1
1 10 100

COLLECTOR CURRENT IC (A)

FORWARD CURRENT I

(A)

F

REVERSE RECOVERY CHARACTERISTICS

VCC=600 V, VGE=±15 V, RG=13 Ω, INDUCTIVE LOAD

1000

(A)

rr

100

(ns), I

rr

t

--------------- : T

CLAMP DIODE

(TYPICAL)

=150 °C, - - - - -: Tj=125 °C

j

trr

SWITCHING ENERGY (mJ)

REVERSE RECOVERY ENERGY (mJ)

Err

1

10 100 1000

EXTERNAL GATE RESISTANCE R

TRANSIENT THERMAL IMPEDANCE

CHARACTERISTICS

(MAXIMUM)

1

0.1

Single pulse, TC=25 °C

th(j-c)

Z

0.01

(Ω)

G

Irr

0.001

10

110100

NORMALIZED TRANSIENT THERMAL RESISTANCE

0.00001 0.0001 0.001 0.01 0.1 1 10

R

=0.35 K/W, R

th(j-c)Q

th(j-c)D

=0.63 K/W

FORWARD CURRENT IF (A) TIME (S)

11

Apr. 2011

MITSUBISHI IGBT MODULES

CM100RX-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

Keep safety first in your circuit designs!

• Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is

always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property
damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of
substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.

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12

Apr. 2011