Mitsubishi Electric Corporation Semiconductor Group CM100E3U-24H Datasheet

TC Measured

Point

E

A
B

H

GF

CM

O

P PQ

E2 C1C2E1

O

E2

D

C

3-M5 Nuts

R

C2E1

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 3.7 94.0
B 3.15±0.01 80.0±0.25
C 1.89 48.0
D 0.94 24.0
E 0.28 7.0
F 0.67 17.0
G 0.91 23.0
H 0.91 23.0

J 0.43 11.0

L 0.16 4.0

J

G2G2

M

N

Dimensions Inches Millimeters

2 - Mounting
Holes

L

(6.5 Dia.)

TAB #110 t = 0.5

S

T

M 0.47 12.0
N 0.53 13.5
O 0.1 2.5

P 0.63 16.0
Q 0.98 25.0
R 1.18 +0.04/-0.02 30.0 +1.0/-0.5

S 0.3 7.5

T 0.83 21.2
U 0.16 4.0

V 0.51 13.0

V

E2
G2

C1

MITSUBISHI IGBT MODULES

CM100E3U-24H

HIGH POWER SWITCHING USE

INSULATED TYPE

U

Description:

Mitsubishi IGBT Modules are de­signed for use in switching applica­tions. Each module consists of one
IGBT having a reverse-connected
super-fast recovery free-wheel di­ode and an anode-collector con­nected super-fast recovery free­wheel diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.

Features:

u Low Drive Power
u Low V
u Discrete Super-Fast Recovery

u High Frequency Operation
u Isolated Baseplate for Easy

Application:

u Brake

Ordering Information:

Example: Select the complete
module number you desire from the
table - i.e. CM100E3U-24H is a
1200V (V
Module.

Type Amperes Volts (x 50)
CM 100 24

CE(sat)

Free-Wheel Diode

Heat Sinking

), 100 Ampere IGBT

CES

Current Rating V

CES

Sep.1998

MITSUBISHI IGBT MODULES

CM100E3U-24H

HIGH POWER SWITCHING USE

INSULATED TYPE

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM100E3U-24H Units
Junction Temperature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) P

j

stg
CES
GES

C
CM

E

EM

c

Mounting Torque, M5 Main Terminal – 2.5 ~ 3.5 N · m
Mounting Torque, M6 Mounting – 3.5 ~ 4.5 N · m
Weight – 310 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

iso

-40 to 150 °C

-40 to 125 °C
1200 Volts

±20 Volts
100 Amperes
200* Amperes
100 Amperes

200* Amperes

650 Watts

2500 Vrms

rating.

j(max)

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Voltage I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V

CES
GES

GE(th)

CE(sat)

VCE = V
VGE = V

, VGE = 0V – – 1 mA

CES

, VCE = 0V – – 0.5 µA

GES

IC = 10mA, VCE = 10V 4.5 6 7.5 Volts

IC = 100A, VGE = 15V, Tj = 25°C – 2.9 3.7 Volts

IC = 100A, VGE = 15V, Tj = 125°C – 2.85 – Volts
Total Gate Charge Q
Emitter-Collector Voltage** V
Emitter-Collector Voltage V

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

G
EC
FM

VCC = 600V, IC = 100A, VGE = 15V – 375 – nC

IE = 100A, VGE = 0V – – 3.2 Volts

IF = 100A, Clamp Diode Part – – 3.2 Volts

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
Load Rise Time t
Switch Turn-off Delay Time t
Times Fall Time t
Diode Reverse Recovery Time** t
Diode Reverse Recovery Charge** Q
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

ies

oes

res

d(on)

r

d(off)

f

rr

rr

rr

rr

VCE = 10V, VGE = 0V – – 5 nF

VCC = 600V, IC = 100A, – – 100 ns

V

= V

GE1

GE2

RG = 3.1Ω, Resistive – – 300 ns

Load Switching Operation – – 350 ns
IE = 100A, diE/dt = -200A/µs – – 300 ns
IE = 100A, diE/dt = -200A/µs – 0.55 – µC
IF = 100A, Clamp Diode Part – – 300 ns

diF/dt = -200A/µs – 0.55 – µC

= 15V, – – 200 ns

––15nF

––3nF

Sep.1998