Mitsubishi Electric Corporation Semiconductor Group CM100DY-24H Datasheet
MITSUBISHI IGBT MODULES
CM100DY-24H
HIGH POWER SWITCHING USE
INSULA TED TYPE
A
H
C2E1
B
EE
H
S
C1E2
C
C2E1
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 3.70 94.0
B 3.150±0.01 80.0±0.25
C 1.89 48.0
D 1.18 Max. 30.0 Max.
E 0.90 23.0
F 0.83 21.2
G 0.71 18.0
H 0.67 17.0
J 0.62 16.0
K
P - DIA. (2 TYP.)
J
D
Q
R - M5 THD (3 TYP.)
JJ
N
N
E2
Dimensions Inches Millimeters
K 0.51 13.0
L 0.47 12.0
M 0.30 7.5
N 0.28 7.0
P 0.256 Dia. Dia. 6.5
Q 0.31 8.0
R M5 Metric M5
S 0.16 4.0
G
G1 E1 E2 G2
S
L
Description:
Mitsubishi IGBT Modules are designed for use in switching appli-
TAB#110 t=0.5
cations. Each module consists of
two IGBTs in a half-bridge configuration with each transistor having a
M
reverse-connected super-fast recovery free-wheel diode. All com-
F
ponents and interconnects are isolated from the heat sinking baseplate, offering simplified system
assembly and thermal management.
G2
E2
Features:
u Low Drive Power
u Low V
CE(sat)
u Discrete Super-Fast Recovery
C1
Free-Wheel Diode
u High Frequency Operation
u Isolated Baseplate for Easy
E1
G1
Heat Sinking
Applications:
u AC Motor Control
u Motion/Servo Control
u UPS
u Welding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM100DY-24H
is a 1200V (V
), 100 Ampere
CES
Dual IGBT Module.
Type Current Rating V
Amperes Volts (x 50)
CM 100 24
CES
Sep.1998
MITSUBISHI IGBT MODULES
CM100DY-24H
HIGH POWER SWITCHING USE
INSULA TED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM100DY-24H Units
Junction Temperature T
Storage T emperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (TC = 25°C) I
Peak Collector Current I
Emitter Current** (TC = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) P
j
stg
CES
GES
C
CM
E
EM
c
Mounting Torque, M5 Main Terminal – 1.47 ~ 1.96 N · m
Mounting Torque, M6 Mounting – 1.96 ~ 2.94 N · m
Weight – 270 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
j(max)
iso
rating.
–40 to 150 °C
–40 to 125 °C
1200 Volts
±20 Volts
100 Amperes
200* Amperes
100 Amperes
200* Amperes
780 Watts
2500 Vrms
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Ty p. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)
VCE = V
VGE = V
, VGE = 0V – – 1.0 mA
CES
, VCE = 0V – – 0.5 µA
GES
IC = 10mA, VCE = 10V 4.5 6.0 7.5 Volts
IC = 100A, VGE = 15V – 2.5 3.4** Volts
IC = 100A, VGE = 15V, Tj = 150°C – 2.25 – Volts
Total Gate Charge Q
Emitter-Collector Voltage V
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
G
EC
VCC = 600V, IC = 100A, VGE = 15V – 500 – nC
IE = 100A, VGE = 0V – – 3.5 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Ty p. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay T ime t
d(on)
Load Rise Time t
Switching Turn-off Delay Time t
d(off)
Time Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q
ies
oes
res
r
f
rr
rr
VGE = 0V, VCE = 10V – – 7 nF
VCC = 600V, IC = 100A, – – 350 ns
V
= V
GE1
= 15V, RG = 3.1Ω – – 300 ns
GE2
IE = 100A, diE/dt = –200A/µs – – 250 ns
IE = 100A, diE/dt = –200A/µs – 0.74 – µC
– – 20 nF
– – 4 nF
– – 250 ns
– – 350 ns
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Ty p. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R
th(j-c)
th(j-c)
th(c-f)
Per Module, Thermal Grease Applied – – 0.065 °C/W
Per IGBT – – 0.16 °C/W
Per FWDi – – 0.35 °C/W
Sep.1998
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