Mitsubishi Electric Corporation Semiconductor Group CM1000HA-24H Datasheet
MITSUBISHI IGBT MODULES
CM1000HA-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
A
B
R
K
U - M4 THD
(2 TYP.)
P
M
C
T - DIA.
(4 TYP.)
E
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 5.12 130.0
B 4.33±0.01 110.0±0.25
C 1.840 46.75
D
E
F 1.42 36.0
G 1.25 31.8
H 1.18 30.0
J 1.10 28.0
K 1.08 27.5
E
G
E
Q
1.73+0.04/–0.02 44.0+1.0/–0.5
1.46+0.04/–0.02 37.0+1.0/–0.5
L
H
G
E
S - M8 THD
(2 TYP.)
AB
Description:
C
G
J
Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of
one IGBT in a single configuration
with a reverse-connected super-
NF
fast recovery free-wheel diode. All
components and interconnects are
isolated from the heat sinking
baseplate, offering simplified system assembly and thermal man-
D
agement.
Features:
u Low Drive Power
u Low V
CE(sat)
u Discrete Super-Fast Recovery
Free-Wheel Diode
E
C
u High Frequency Operation
u Isolated Baseplate for Easy
Heat Sinking
Applications:
u AC Motor Control
u Motion/Servo Control
u UPS
Dimensions Inches Millimeters
L 0.79 20.0
M 0.77 19.5
N 0.75 19.0
P 0.61 15.6
Q 0.51 13.0
R 0.35 9.0
S M8 Metric M8
T 0.26 Dia. Dia. 6.5
U M4 Metric M4
u Welding Power Supplies
Ordering Information:
Example: Select the complete
part module number you desire
from the table below -i.e.
CM1000HA-24H is a 1200V
(V
), 1000 Ampere Single IGBT
CES
Module.
Type Current Rating V
Amperes Volts (x 50)
CM 1000 24
CES
Sep.1998
MITSUBISHI IGBT MODULES
CM1000HA-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM1000HA-24H Units
Junction Temperature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (TC = 25°C) I
Peak Collector Current (Tj ≤ 150°C) I
Emitter Current** (TC = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (TC = 25°C) P
j
stg
CES
GES
C
CM
E
EM
c
Mounting Torque, M8 Main Terminal – 8.83 ~ 10.8 N · m
Mounting, Torque M6 Mounting – 1.96 ~ 2.94 N · m
Mounting, Torque M4 Terminal – 0.98 ~ 1.47 N · m
Weight – 1600 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
j(max)
iso
rating.
–40 to +150 °C
–40 to +125 °C
1200 Volts
±20 Volts
1000 Amperes
2000* Amperes
1000 Amperes
2000* Amperes
5800 Watts
2500 Vrma
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)
VCE = V
VGE = V
, VGE = 0V – – 6 mA
CES
, VCE = 0V – – 0.5 µA
GES
IC = 100mA, VCE = 10V 4.5 6.0 7.5 Volts
IC = 1000A, VGE = 15V – 2.7 3.6** Volts
IC = 1000A, VGE = 15V, Tj = 150°C – 2.4 – Volts
Total Gate Charge Q
Emitter-Collector Voltage V
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
G
EC
VCC = 600V, IC = 1000A, VGE = 15V – 5000 – nC
IE = 1000A, VGE = 0V – – 3.5 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
Load Rise Time t
Switching Turn-off Delay Time t
Time Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q
ies
oes
res
d(on)
r
d(off)
f
rr
rr
VGE = 0V, VCE = 10V – – 70 nF
VCC = 600V, IC = 1000A, – – 1500 ns
V
= V
GE1
= 15V, RG = 3.3Ω – – 1200 ns
GE2
IE = 1000A, diE/dt = –2000A/µs – – 250 ns
IE = 1000A, diE/dt = –2000A/µs – 7.4 – µC
– – 200 nF
– – 40 nF
– – 600 ns
– – 350 ns
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R
th(j-c)
th(j-c)
th(c-f)
Per Module, Thermal Grease Applied – – 0.018 °C/W
Per IGBT – – 0.022 °C/W
Per FWDi – – 0.050 °C/W
Sep.1998
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