MITSUBISHI CM1000DU-34NF User Guide

CM1000DU-34NF

MITSUBISHI IGBT MODULES

CM1000DU-34NF

HIGH POWER SWITCHING USE

●

IC................................................................ 1000A

●

VCES.......................................................... 1700V

●

Insulated Type

●

2-elements in a pack

APPLICATION

General purpose inverters Servo controls, etc

OUTLINE DRAWING & CIRCUIT DIAGRAM

A,B HOUSING Type

(J. S. T. Mfg. Co. Ltd)

A : VHR-2N
B : VHR-5N

Tc measured point
(The side of Cu
base plate)

8-f6.5

MOUNTING HOLES

9-M6 NUTS 12

15.7

A

E2G2C2

B

PPS

18

150

137.5

±0.25

42

1414

C2E1

E2

14 1414141414

42 42

12

C1E1G1

C1

Tc measured point
(The side of Cu

2

base plate)

±0.25

11 1921

±0.25

38

74

±0.25

129.5

42.5

10.5

15.7

±0.25

38

5.5

±0.25

74

166

1.9

±0.2

34.6

34.6

+1.0
–0.5

+1.0
–0.5

Dimensions in mm

4

LABEL

25.1

C2

C2E1 E2 C1

C1

G1 E1 G2E2

CIRCUIT DIAGRAM

Sep. 2004

MITSUBISHI IGBT MODULES

CM1000DU-34NF

HIGH POWER SWITCHING USE

MAXIMUM RATINGS

Symbol Parameter

V

CES

VGES
IC
ICM
IE (
IEM (
PC (
Tj
Tstg
Viso

Collector-emitter voltage
Gate-emitter voltage

Collector current

Note 1

)

Emitter current

Note 1

)

Maximum collector dissipation

Note 3

)

Junction temperature
Storage temperature
Isolation voltage

—

Torque strength
Weight

—

(Tj = 25°C)

Conditions UnitRatings
G-E Short
C-E Short
T

C’ = 104°C

Pulse (Note 2)
T

C = 25°C

Pulse (Note 2)
T

C’ = 25°C

*3

Main terminal to base plate, AC 1 min.
Main terminal M6
Mounting holes M6
Typical value

ELECTRICAL CHARACTERISTICS (Tj = 25°C)

Symbol

ICES
VGE(th)
IGES

VCE(sat)

(chip)

R(lead)
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Qrr (
VEC(

(chip)

Rth(j-c’)Q
R

th(j-c’)R

R

th(c-f)

RG

Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).

1 : Tc measured point is just under the chips.

*

If you use this value, R

2 : Typical value is measured by using Shin-etsu Silicone “G-746”.

*

3 : The operation temperature is restrained by the permission temperature of female connector.

*

Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current

Collector-emitter saturation voltage
(without lead resistance)

Module lead resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time

Note 1

)

Reverse recovery charge

Note 1

)

Emitter-collector voltage

Note 1

)

(without lead resistance)
Thermal resistance
Contact thermal resistance

External gate resistance

2. Pulse width and repetition rate should be such that the device junction temp. (T

3. Junction temperature (T

4. Pulse width and repetition rate should be such as to cause neglible temperature rise.

Parameter Test conditions

VCE = VCES, VGE = 0V

C = 100mA, VCE = 10V

I
V

GE = VGES, VCE = 0V

T

j = 25°C

T

j = 125°C

IC = 1000A, VGE = 15V (Note 4)

Ic = 1000A, terminal-chip

CE = 10V

V
V

GE = 0V

V

CC = 1000V, IC = 1000A, VGE = 15V

CC = 1000V, IC = 1000A

V
V

GE1 = VGE2 = 15V

R

G = 0.47Ω, Inductive load switching operation

I

E = 1000A

E = 1000A, VGE = 0V

I

*1

j) should not increase beyond 150°C.

th(f-a) should be measured just under the chips.

IGBT part (1/2 module)
FWDi part (1/2 module)

*2

Case to fin, Thermal compound applied (1/2 module)

j) dose not exceed Tjmax rating.

—

5.5
—

—
—
—
—
—
—
—
—
—
—
—
—
—

—
—

—
—

0.47

1700

±20
1000
2000
1000
2000
8900

–40 ~ +150
–40 ~ +125

3500

3.5 ~ 4.5

3.5 ~ 4.5
1400

Limits

Typ.Min. Max.

—

7

—

2.2

2.45

0.286
—
—
—

6000

—
—
—
—
—
90

2.3
—

—

0.016
—

1

8.5
5

2.8

—
—

220

25

4.7

—
600
150
900
200
450

—

3

0.014

0.023
—

4.7

V
V

A

A

W

°C
°C

V
N • m
N • m

g

Unit

mA

V

µA

V

mΩ

nF

nC

ns

ns

µC

V

°C/W

Ω

Sep. 2004