CM1000DU-34NF
MITSUBISHI IGBT MODULES
CM1000DU-34NF
HIGH POWER SWITCHING USE
●
IC................................................................ 1000A
●
VCES.......................................................... 1700V
●
Insulated Type
●
2-elements in a pack
APPLICATION
General purpose inverters Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
A,B HOUSING Type
(J. S. T. Mfg. Co. Ltd)
A : VHR-2N
B : VHR-5N
Tc measured point
(The side of Cu
base plate)
8-f6.5
MOUNTING HOLES
9-M6 NUTS 12
15.7
A
E2G2C2
B
PPS
18
150
137.5
±0.25
42
1414
C2E1
E2
14 1414141414
42 42
12
C1E1G1
C1
Tc measured point
(The side of Cu
2
base plate)
±0.25
11 1921
±0.25
38
74
±0.25
129.5
42.5
10.5
15.7
±0.25
38
5.5
±0.25
74
166
1.9
±0.2
34.6
34.6
+1.0
–0.5
+1.0
–0.5
Dimensions in mm
4
LABEL
25.1
C2
C2E1 E2 C1
C1
G1 E1 G2E2
CIRCUIT DIAGRAM
Sep. 2004
MITSUBISHI IGBT MODULES
CM1000DU-34NF
HIGH POWER SWITCHING USE
MAXIMUM RATINGS
Symbol Parameter
V
CES
VGES
IC
ICM
IE (
IEM (
PC (
Tj
Tstg
Viso
Collector-emitter voltage
Gate-emitter voltage
Collector current
Note 1
)
Emitter current
Note 1
)
Maximum collector dissipation
Note 3
)
Junction temperature
Storage temperature
Isolation voltage
—
Torque strength
Weight
—
(Tj = 25°C)
Conditions UnitRatings
G-E Short
C-E Short
T
C’ = 104°C
Pulse (Note 2)
T
C = 25°C
Pulse (Note 2)
T
C’ = 25°C
*3
Main terminal to base plate, AC 1 min.
Main terminal M6
Mounting holes M6
Typical value
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
ICES
VGE(th)
IGES
VCE(sat)
(chip)
R(lead)
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Qrr (
VEC(
(chip)
Rth(j-c’)Q
R
th(j-c’)R
R
th(c-f)
RG
Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
1 : Tc measured point is just under the chips.
*
If you use this value, R
2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
*
3 : The operation temperature is restrained by the permission temperature of female connector.
*
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Collector-emitter saturation voltage
(without lead resistance)
Module lead resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Note 1
)
Reverse recovery charge
Note 1
)
Emitter-collector voltage
Note 1
)
(without lead resistance)
Thermal resistance
Contact thermal resistance
External gate resistance
2. Pulse width and repetition rate should be such that the device junction temp. (T
3. Junction temperature (T
4. Pulse width and repetition rate should be such as to cause neglible temperature rise.
Parameter Test conditions
VCE = VCES, VGE = 0V
C = 100mA, VCE = 10V
I
V
GE = VGES, VCE = 0V
T
j = 25°C
T
j = 125°C
IC = 1000A, VGE = 15V (Note 4)
Ic = 1000A, terminal-chip
CE = 10V
V
V
GE = 0V
V
CC = 1000V, IC = 1000A, VGE = 15V
CC = 1000V, IC = 1000A
V
V
GE1 = VGE2 = 15V
R
G = 0.47Ω, Inductive load switching operation
I
E = 1000A
E = 1000A, VGE = 0V
I
*1
j) should not increase beyond 150°C.
th(f-a) should be measured just under the chips.
IGBT part (1/2 module)
FWDi part (1/2 module)
*2
Case to fin, Thermal compound applied (1/2 module)
j) dose not exceed Tjmax rating.
—
5.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.47
1700
±20
1000
2000
1000
2000
8900
–40 ~ +150
–40 ~ +125
3500
3.5 ~ 4.5
3.5 ~ 4.5
1400
Limits
Typ.Min. Max.
—
7
—
2.2
2.45
0.286
—
—
—
6000
—
—
—
—
—
90
2.3
—
—
0.016
—
1
8.5
5
2.8
—
—
220
25
4.7
—
600
150
900
200
450
—
3
0.014
0.023
—
4.7
V
V
A
A
W
°C
°C
V
N • m
N • m
g
Unit
mA
V
µA
V
mΩ
nF
nC
ns
ns
µC
V
°C/W
Ω
Sep. 2004
PERFORMANCE CURVES
MITSUBISHI IGBT MODULES
CM1000DU-34NF
HIGH POWER SWITCHING USE
OUTPUT CHARACTERISTICS
(TYPICAL)
13V
j
T
(A)
C
2000
1600
V
GE
= 20V
15V
1200
800
400
COLLECTOR CURRENT I
0
0246810
COLLECTOR-EMITTER VOLTAGE V
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
= 15V
(V)
5
GE
V
4
CE (sat)
3
= 25°C
12V
11V
10V
8V
CE
9V
(V)
TRANSFER CHARACTERISTICS
2000
CE
V
(TYPICAL)
= 10V
1600
1200
800
400
COLLECTOR CURRENT (A)
0
0 4 8 121620
j
T
j
T
GATE-EMITTER VOLTAGE V
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
C
= 400A
I
C
= 1000A
I
(TYPICAL)
I
C
= 2000A
10
(V)
CE (sat)
j
= 25°C
T
8
6
= 25°C
= 125°C
GE
(V)
2
1
COLLECTOR-EMITTER
SATURATION VOLTAGE V
0
0 500 1000 1500 2000
COLLECTOR CURRENT IC (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
4
10
7
5
(A)
3
E
2
3
10
7
5
3
2
EMITTER CURRENT I
2
10
1234
(TYPICAL)
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
4
2
COLLECTOR-EMITTER
SATURATION VOLTAGE V
0
GATE-EMITTER VOLTAGE V
CAPACITANCE–V
CHARACTERISTICS
3
10
7
5
3
(nF)
2
res
2
10
, C
7
5
oes
3
2
, C
ies
1
10
7
5
3
2
0
10
7
5
3
2
V
GE
–1
–1
10
= 0V
2
10
357 2
CAPACITANCE C
10
(TYPICAL)
0
357 2
10
CE
1
GE
(V)
C
ies
C
oes
C
res
357
2004 12816
2
10
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
Sep. 2004
MITSUBISHI IGBT MODULES
CM1000DU-34NF
HIGH POWER SWITCHING USE
SWITCHING CHARACTERISTICS
HALF-BRIDGE
23
(TYPICAL)
t
f
t
r
57
4
10
7
5
3
2
3
10
7
5
3
2
2
10
7
5
SWITCHING TIMES (ns)
3
2
1
10
2
10
COLLECTOR CURRENT IC (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
–3
10
1
10
Single Pulse
7
5
IGBT part:
Per unit base = R
3
(°C/W)
FWDi part:
2
Per unit base = R
0
10
7
th (j–c’)
5
3
2
–1
10
7
5
3
2
–2
10
7
NORMALIZED TRANSIENT
5
TC’ measured
3
point is just
2
under the chips
THERMAL IMPEDANCE Z
–3
10
–2
23 57 23 57 23 57 23 57
10
t
d(off)
t
d(on)
Conditions:
V
CC
= 1000V
V
GE
= ±15V
R
G
= 0.47Ω
j
= 125°C
T
Inductive load
3
10
23 57
–1
10
th(j–c’) = 0.014°C/W
th(j–c’) = 0.023°C/W
10
10
–5
23 57 23 57
10
TIME (s)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
I
rr
Conditions:
V
CC
V
GE
t
rr
G
R
T
j
Inductive load
3
10
23 57
EMITTER CURRENT I
= 1000V
= ±15V
= 0.47Ω
= 25°C
E
(A)
10
4
10
4
10
(A)
rr
7
(ns)
rr
5
3
2
3
10
7
5
3
2
REVERSE RECOVERY TIME t
2
10
REVERSE RECOVERY CURRENT l
4
10
2
23 57
GATE CHARGE
CHARACTERISTICS
10
10
10
10
10
1
3
2
–1
7
5
3
2
–2
7
5
3
2
–3
–3
20
IC = 1000A
(V)
GE
16
12
8
4
GATE-EMITTER VOLTAGE V
0
0 2000 4000 6000 8000 10000
0
–4
(TYPICAL)
VCC = 800V
VCC = 1000V
GATE CHARGE Q
G
(nC)
3
10
7
5
3
2
2
10
7
5
(mJ/pulse)
3
Err
,
2
1
Eoff
10
,
7
5
Eon
3
2
0
10
10
2
2
357 2
IC-E
(TYPICAL)
E
rr
10
I
C
(A)
SW
E
off
E
on
Conditions:
CC
V
V
GE
R
G
T
j
= 125°C
Inductive load
3
= 1000V
= ±15V
= 0.47Ω
357
10
RG-E
SW
3
10
7
5
3
2
(mJ/pulse)
2
10
Err
,
7
5
Eoff
,
3
Eon
2
1
4
10
024135
(TYPICAL)
G
(Ω)
R
E
on
E
off
E
rr
Conditions:
CC
= 1000V
V
V
GE
= ±15V
I
C
= 1000A
T
j
= 125°C
Inductive load
Sep. 2004
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