Mitsubishi Electric Corporation Semiconductor Group BCR3KM Datasheet
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
➁
➀
➂
Measurement point of
case temperature
✽
➀
➁
➂
T1TERMINAL
T
2
TERMINAL
GATE TERMINAL
15 ± 0.314 ± 0.5
10 ± 0.3 2.8 ± 0.2
φ
3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
2.54 ± 0.252.54 ± 0.25
2.6 ± 0.2
4.5 ± 0.2
0.75 ± 0.15
3 ± 0.33.6 ± 0.3
6.5 ± 0.3
➀➁➂
E
BCR3KM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR3KM
●
IT (RMS)
●
VDRM
●
IFGT !, IRGT
●
UL Recognized : File No. E80271
..................................................................
......................................................
!
, IRGT
...................
#
400V / 600V
15mA (10mA)
OUTLINE DRAWING Dimensions in mm
3A
✽2
TO-220FN
APPLICATION
Control of heater such as electric rice cooker, electric pot
MAXIMUM RATINGS
Symbol
VDRM
VDSM
Symbol
IT (RMS)
ITSM
2
I
t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
iso
V
✽1. Gate open.
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
RMS on-state current
Surge on-state current
2
I
t
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
—
Weight
Isolation voltage
Parameter
Parameter
for fusing
Voltage class
✽1
✽1
Commercial frequency, sine full wave 360° conduction, Tc=111°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case
8
400
500
Conditions
12
600
720
Ratings
3
30
3.7
3
0.3
6
0.5
–40 ~ +125
–40 ~ +125
2.0
2000
Unit
V
V
Unit
A
A
2
A
s
W
W
V
A
°C
°C
g
V
Feb.1999
INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol Parameter Test conditions
IDRM
VTM
Repetitive peak off-state current
On-state voltage
VFGT !
VRGT !
Gate trigger voltage
✽2
VRGT #
IFGT !
IRGT !
Gate trigger current
✽2
IRGT #
VGD
Rth (j-c)
Rth (j-a)
✽2.High sensitivity (IGT≤ 10mA) is also available. (IGT item ➀)
✽3.The contact thermal resistance R
Gate non-trigger voltage
Thermal resistance
Thermal resistance
th (c-f) in case of greasing is 0.5°C/W.
Tj=125°C, VDRM applied
c=25°C, ITM=4.5A, Instantaneous measurement
T
!
@
T
j=25°C, VD=6V, RL=6Ω, RG=330Ω
#
!
j=25°C, VD=6V, RL=6Ω, RG=330Ω
T
@
#
T
j=125°C, VD=1/2VDRM
Junction to case
✽3
Junction to ambient
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3KM
LOW POWER USE
Min.
—
—
—
—
—
—
—
—
0.2
—
—
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.5
1.5
1.5
1.5
4.0
15
15
15
—
50
Unit
mA
V
V
V
V
✽2
mA
✽2
mA
✽2
mA
V
°C/W
°C/W
PERFORMANCE CURVES
2
10
7
TC = 25°C
5
3
2
1
10
7
5
3
2
0
10
7
5
ON-STATE CURRENT (A)
3
2
–1
10
ON-STATE VOLTAGE (V)
MAXIMUM ON-STATE
CHARACTERISTICS
RATED SURGE ON-STATE
CURRENT
40
35
30
25
20
15
10
5
SURGE ON-STATE CURRENT (A)
3.80.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4
0
10023 5710123 5710
44
2
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
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