MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
➁
➀
➂
Measurement point of
case temperature
✽
➀
➁
➂
T1TERMINAL
T
2
TERMINAL
GATE TERMINAL
15 ± 0.314 ± 0.5
10 ± 0.3 2.8 ± 0.2
φ
3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
2.54 ± 0.252.54 ± 0.25
2.6 ± 0.2
4.5 ± 0.2
0.75 ± 0.15
3 ± 0.33.6 ± 0.3
6.5 ± 0.3
➀➁➂
E
BCR3KM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR3KM
●
IT (RMS)
●
VDRM
●
IFGT !, IRGT
●
UL Recognized : File No. E80271
..................................................................
......................................................
!
, IRGT
...................
#
400V / 600V
15mA (10mA)
OUTLINE DRAWING Dimensions in mm
3A
✽2
TO-220FN
APPLICATION
Control of heater such as electric rice cooker, electric pot
MAXIMUM RATINGS
Symbol
VDRM
VDSM
Symbol
IT (RMS)
ITSM
2
I
t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
iso
V
✽1. Gate open.
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
RMS on-state current
Surge on-state current
2
I
t
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
—
Weight
Isolation voltage
Parameter
Parameter
for fusing
Voltage class
✽1
✽1
Commercial frequency, sine full wave 360° conduction, Tc=111°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case
8
400
500
Conditions
12
600
720
Ratings
3
30
3.7
3
0.3
6
0.5
–40 ~ +125
–40 ~ +125
2.0
2000
Unit
V
V
Unit
A
A
2
A
s
W
W
V
A
°C
°C
g
V
Feb.1999
INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol Parameter Test conditions
IDRM
VTM
Repetitive peak off-state current
On-state voltage
VFGT !
VRGT !
Gate trigger voltage
✽2
VRGT #
IFGT !
IRGT !
Gate trigger current
✽2
IRGT #
VGD
Rth (j-c)
Rth (j-a)
✽2.High sensitivity (IGT≤ 10mA) is also available. (IGT item ➀)
✽3.The contact thermal resistance R
Gate non-trigger voltage
Thermal resistance
Thermal resistance
th (c-f) in case of greasing is 0.5°C/W.
Tj=125°C, VDRM applied
c=25°C, ITM=4.5A, Instantaneous measurement
T
!
@
T
j=25°C, VD=6V, RL=6Ω, RG=330Ω
#
!
j=25°C, VD=6V, RL=6Ω, RG=330Ω
T
@
#
T
j=125°C, VD=1/2VDRM
Junction to case
✽3
Junction to ambient
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3KM
LOW POWER USE
Min.
—
—
—
—
—
—
—
—
0.2
—
—
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.5
1.5
1.5
1.5
4.0
15
15
15
—
50
Unit
mA
V
V
V
V
✽2
mA
✽2
mA
✽2
mA
V
°C/W
°C/W
PERFORMANCE CURVES
2
10
7
TC = 25°C
5
3
2
1
10
7
5
3
2
0
10
7
5
ON-STATE CURRENT (A)
3
2
–1
10
ON-STATE VOLTAGE (V)
MAXIMUM ON-STATE
CHARACTERISTICS
RATED SURGE ON-STATE
CURRENT
40
35
30
25
20
15
10
5
SURGE ON-STATE CURRENT (A)
3.80.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4
0
10023 5710123 5710
44
2
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3KM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE CHARACTERISTICS
2
10
7
5
3
2
1
10
7
5
3
VGT
2
0
10
7
GATE VOLTAGE (V)
5
3
2
IFGM I , IRGM III VGD = 0.2V
–1
10
0
10
2
(Ι, ΙΙ AND ΙΙΙ)
PG(AV) = 0.3W
IRGT I
1
10
357 2
GATE CURRENT (mA)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
3
3
10
10
100 (%)
7
7
5
5
)
4
4
)
3
3
t°C
25°C
2
2
=
=
j
j
(T
(T
2
2
10
10
7
7
5
5
4
4
3
3
2
2
1
1
GATE TRIGGER VOLTAGE
GATE TRIGGER VOLTAGE
10
10
–60 –20 20
–60 –20 20
–40 0 40 80 120
–40 0 40 80 120
JUNCTION TEMPERATURE (°C)
PGM = 3W
IGM =
0.5A
2
10
357 2
357
TYPICAL EXAMPLE
60 100 140
60 100 140
10
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
3
100 (%)
)
)
t°C
25°C
=
=
j
j
(T
(T
10
10
7
5
4
3
2
2
7
5
4
IFGT I , IRGT I
TYPICAL EXAMPLE
IRGT III
3
2
1
GATE TRIGGER CURRENT
GATE TRIGGER CURRENT
3
10
–60 –20 20
–40 0 40 80 120
60 100 140
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
2
2310
5.0
5710323 57
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
TRANSIENT THERMAL IMPEDANCE (°C/W)
–1
2310
5710023 5710123 5710
2
CONDUCTION TIME
(CYCLES AT 60Hz)
TRANSIENT THERMAL IMPEDANCE (°C/W)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO AMBIENT)
2
10
7
5
4
3
2
1
10
7
5
4
3
2
0
10
10
2
2
3
10
357 2
357 2
CONDUCTION TIME
(CYCLES AT 60Hz)
10
4
357
10
MAXIMUM ON-STATE POWER
DISSIPATION
5.0
4.5
4.0
360°
CONDUCTION
3.5
RESISTIVE,
3.0
INDUCTIVE
LOADS
2.5
2.0
1.5
1.0
0.5
ON-STATE POWER DISSIPATION (W)
5
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
(°C)
)
BCR3KM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
130
120
CURVES APPLY
110
REGARDLESS
100
OF CONDUCTION
ANGLE
90
80
70
360°
60
CONDUCTION
50
RESISTIVE,
CASE TEMPERATURE (°C)
INDUCTIVE
40
LOADS
30
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
140
120
NATURAL CONVECTION
NO FINS
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE LOADS
100
80
60
40
20
AMBIENT TEMPERATURE (°C)
0
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
RMS ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
140
120
100
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
120 120 t2.3
100 100 t2.3
60 60 t2.3
80
60
40
20
AMBIENT TEMPERATURE (°C)
0
024681357
CURVES APPLY
REGARDLESS OF
CONDUCTION ANGLE
RESISTIVE,
INDUCTIVE LOADS
NATURAL CONVECTION
RMS ON-STATE CURRENT (A)
REPETITIVE PEAK OFF-STATE
100 (%)
10
)
)
t°C
25°C
=
=
j
j
(T
(T
10
10
10
REPETITIVE PEAK OFF-STATE CURRENT
REPETITIVE PEAK OFF-STATE CURRENT
CURRENT VS. JUNCTION
TEMPERATURE
5
7
5
3
2
4
7
5
3
2
3
7
5
3
2
2
–60 –20 20 60 100 140–40 0 40 80 120
TYPICAL EXAMPLE
JUNCTION TEMPERATURE (°C)
HOLDING CURRENT VS.
10
7
100 (%)
5
)
4
)
3
25°C
t°C
=
2
=
j
j
(T
(T
2
10
7
5
4
3
2
HOLDING CURRENT
HOLDING CURRENT
1
10
–60–40 0 40 80 120–20 20 60 100 140
TYPICAL EXAMPLE
JUNCTION TEMPERATURE
3
JUNCTION TEMPERATURE
LACHING CURRENT VS.
JUNCTION TEMPERATURE
3
10
7
5
3
2
2
10
7
5
3
2
1
10
7
5
LACHING CURRENT (mA)
3
2
0
10
–60 –20 20 60 100 140–40 0 40 80 120
+
+
T
2
, G
–
–
T
2
, G
DISTRIBUTION
TYPICAL
EXAMPLE
JUNCTION TEMPERATURE (°C
+
–
T
2
, G
TYPICAL
EXAMPLE
Feb.1999
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
100 (%)
)
)
t°C
25°C
=
=
j
j
(T
(T
160
140
120
100
80
TYPICAL EXAMPLE
60
40
20
BREAKOVER VOLTAGE
BREAKOVER VOLTAGE
0
–60–40 0 40 80 120–20 20 60 100 140
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3KM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
160
100 (%)
140
)
)
120
100
dv/dt = xV/µs
dv/dt = 1V/µs
80
(
(
60
40
20
0
BREAKOVER VOLTAGE
BREAKOVER VOLTAGE
10
OFF-STATE VOLTAGE
TYPICAL EXAMPLE
III QUADRANT
1
2
2
10
357 2
Tj = 125°C
I QUADRANT
3
10
357 2
357
10
4
JUNCTION TEMPERATURE (°C)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
3
10
7
5
100 (%)
4
3
)
)
tw
DC
2
(
(
10
7
5
4
3
2
GATE TRIGGER CURRENT
GATE TRIGGER CURRENT
10
2
1
10
0
I
RGT III
I
RGT I
I
FGT I
23457
GATE CURRENT PULSE WIDTH (µs)
TYPICAL EXAMPLE
1
10
23457
10
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω
6V
TEST PROCEDURE
6Ω
6V
2
TEST PROCEDURE
A
V
A
V
6Ω
6V
R
G
TEST PROCEDURE
R
G
A
R
V
G
Feb.1999
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