Mitsubishi Electric Corporation Semiconductor Group 2SK2975 Datasheet
MITSUBISHI RF POWER MOS FET
Nov. ´97
ABSOLUTE MAXIMUM RATINGS (TC=25˚C, unless otherwise noted)
INDEX MARK
2SK2975
DESCRIPTION
2SK2975 is a MOS FET type transistor specifically designed for
VHF/UHF power amplifiers applications.
FEATURES
• High power gain:Gpe≥8.4dB
@VDD=9.6V,f=450MHz,Pin=30dBm
• High efficiency:55% typ.
• Source case type seramic package
(connected internally to source)
APPLICATION
For drive stage and output stage of power amplifiers in VHF/UHF
band portable radio sets.
OUTLINE DRAWING
3
4.9
2
1
1 : DRAIN
2 : SOURCE
3 : GATE
MARKING
INDEX
MARK
LOT No.
(BOTTOM)(TOP)
2.0
3.50
Dimensions in mm
t=1.2MAX
TYPE No.
Symbol
VDSS
VGSS
Pch
Tj
Tstg
Note1: Above parameters are guaranteed independently.
2: Solder source pad on Copper Block(14×2.8×2mm)
Drain to source voltage
Gate to source voltage
Channel dissipation
Junction temperature
Storage temperature
Parameter
Conditions
Tc=25˚C (Note2)
ELECTRICAL CHARACTERISTICS (TC=25˚C, unless otherwise noted)
Symbol Unit
IDSS
IGSS
VTH
Ciss
Coss
Pout
hD
Note: Above parameters,ratings,limits and conditions are subject to change.
Threshold voltage
Parameter Test conditions
VDS=17V, VGS=0V
VGS=10V, VDS=0V
VDS=7V, IDS=1mA
VGS=10V, VDS=0V,f=1MHz
VDS=10V, VGS=0V,f=1MHz
VDS=9.6V, Pin=1W,f=450MHz
Ratings
30
±20
10
175
-40 to +110
Unit
V
V
W
˚C
˚C
1.0
50
Limits
Typ MaxMin
10
1.7
45
80
7
8
55
µA
1
µA
V
pF
pF
W
%
Nov. ´97
1.5mm
46mm
10pF
1000pF
VGG
VDD
31pF
12.5mm
12mm
22.5mm
16mm
3mm
3mm
add VS. VDD
TYPICAL PERFORMANCE DATA
add VS. Pin
ηadd
ηadd
MITSUBISHI RF POWER MOS FET
2SK2975
IDS VS. VDS
5
TC=25˚C
4
3
2
1
0
2 4 6 10
1 3 5 7 9
0
VDS(V)
PO,
40
38
36
32
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
0 83412 24
4
2 6
PO
16 20
10 14 18 22
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
VGS=2.0V
8
26
2830
IDS VS. VGS
4.5
VDS=9.6V
TC=25˚C
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
1.0 2.0
0.5 1.5 2.5 3.5 4.5
0
3.0
4.0
5.0
VGS(V)
PO,
100
90
80
70
60
50
40
30
20
10
0
32
50
48
46
44
42
40
38
36
32
30
28
26
24
22
20
18
16
14
12
10
4345 8
3 6 7
PO
9
10
11 12 13
100
90
80
70
60
50
40
30
20
10
0
INPUT POWER Pin (dBm)
EQUIVALENT CIRCUIT
C3
GR40-310
C1
GR40-102
C2
GR40-10
INPUT
Note: Board material-glass epoxi substrate
micri strip line width=2.8mm, ε r :4.8,t=1.6mm
R1
CR10-562
5600Ω
C4
GR40-10
10pF
R2
CR10-562
5600Ω
C7
GR40-102
1000pF
C5
GR40-102
1000pFC610 µF 50V
C11
GR40-270
27pF
DRAIN SUPPLY VOLTAGE VDD(V)
C12
GR40-130
13pF
C13
GR40-102
4Turns AWG#26,φ1.1
Enameled wire(mm)
C8
C9
GR40-10
GR40-102
10pF
1000pF
1000pFL1
C10
10 µF 50V
OUTPUT
C14
GR40-10
10pF
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