Mitsubishi Electric Corporation Semiconductor Group 2SK2973 Datasheet
MITSUBISHI RF POWER MOS FET
Nov. ´97
ABSOLUTE MAXIMUM RATINGS (TC=25˚C, unless otherwise noted)
2SK2973
DESCRIPTION
2SK2973 is a MOS FET type transistor specifically designed for
VHF/UHF power amplifiers applications.
FEATURES
• High power gain:Gpe≥13dB
@VDD=9.6V,f=450MHz,Pin=17dBm
• High efficiency:55% typ.
• Source case type SOT-89 package
(connected internally to source)
APPLICATION
For drive stage and output stage of power amplifiers in VHF/UHF
band portable radio sets.
OUTLINE DRAWING
4.6MAX
1.6±0.2
2
1
0.53
MAX
1.5
3.0
SOT-89
3
0.48MAX
1 : DRAIN
2 : SOURCE
3 : GATE
MARKING
Dimensions in mm
1.5±0.1
+0.03
0.4
-0.05
MARKING
TYPE No.
K1
LOT No.
Symbol
VDSS
VGSS
Pch
Tj
Tstg
Note1: Above parameters are guaranteed independently.
2: Solder on printed board(Copper leaf area;70×70mm,t=1.6mm Epoxy glass)
Drain to source voltage
Gate to source voltage
Channel dissipation
Junction temperature
Storage temperature
Parameter
Conditions
Tc=25˚C
(Note2)
Ratings
17
±10
1.5
150
-40 to +110
Unit
V
V
W
˚C
˚C
ELECTRICAL CHARACTERISTICS (TC=25˚C, unless otherwise noted)
1.2
45
Limits
Typ MaxMin
10
1
1.8
10
8
1.2
1
55
Symbol Unit
IDSS
IGSS
VTH
Threshold voltage
Ciss
Coss
Pout
hD
Note: Above parameters,ratings,limits and conditions are subject to change.
Parameter Test conditions
VDS=12V, VGS=0V
VGS=10V, VDS=0V
VDS=7V, IDS=1mA
VGS=10V, VDS=0V,f=1MHz
VDS=10V, VGS=0V,f=1MHz
VDS=9.6V, Pin=50mW,f=450MHz
µA
µA
V
pF
pF
W
%
Nov. ´97
add, t VS. VDD
ηadd
TYPICAL PERFORMANCE DATA
39mm
1mm
3mm
4.5mm
8mm
4mm
37mm
22pF
1000pF
10pF
1000pF
VDD
VGG
add VS. Pin
ηadd
L3
ηt
MITSUBISHI RF POWER MOS FET
2SK2973
IDS VS. VDS
1.2
TC=25˚C
1.0
0.8
0.6
0.4
0.2
0.0
2 4 6 10
1 3 5 7 9
0
VDS(V)
PO,
34
32
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
PO
0 10
2
4 6 8 12 16 18 22 24
14 20
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
VGS=2.0V
8
IDS VS. VGS
1.2
VDS=9.6V
TC=25˚C
1.0
0.8
0.6
0.4
0.2
0.0
1.0 2.0
0.5 1.5 2.5 3.5 4.5
0.0
3.0
4.0
5.0
VGS(V)
PO,
85
80
75
70
65
60
55
50
45
40
35
30
25
20
15
10
5
0
26
34
32
30
PO
28
26
24
22
20
18
16
14
12
10
3 10
4
5 6 7 12
8 9 11
95
90
85
80
75
70
65
60
55
50
45
40
35
13
EQUIVALENT CIRCUIT
@VDD=9.6V Match
C2
GR40-220
C1
GR40-102
INPUT
Note: Board material-glass epoxi substrate
L1
3Turns AWG#31,φ0.8
Enameled wire(mm)
micro strip line width=1mm, ε r :4.8,t=0.6mm
INPUT POWER Pin (dBm)
R1
CR10-103
10000Ω
C3
C4
GR40-10
GR40-102
10pF
1000pFC522 µF 50V
R2
CR10-101
100Ω
C6
GR40-102
1000pF
DRAIN SUPPLY VOLTAGE VDD(V)
3Turns AWG#31,φ0.8
Enameled wire(mm)
L2
5Turns AWG#26,φ1.1
Enameled wire(mm)
C7
C8
GR40-10
GR40-102
10pF
1000pFC922 µF 50V
C10
GR40-100
OUTPUT
C11
GR40-102
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