3
SP8715
Electrical Characteristics (Continued)
Guaranteed over the following conditions (unless otherwise stated):
VCC=+2.7V to +5.25V (with respect to VEE), Output load (pin 4) = 10pF, T
amb
= -40°C to +85°C (note 2)
Characteristic Units Conditions
Output level (pin 4) 500 600 mV p-p
Modulus set-up time, ts(notes 5,6,8) 20 ns RF input = 1GHz
Modulus hold time, t
h
(notes 6,8) 1 ns RF input = 1GHz
Power down time, t
pd
(notes 7,8) 10 µs See Figure 9
Power down recovery time, t
pu
6 µs See Figure 9
(notes 7,8)
NOTES
2. All electrical testing is performed at +85°C.
3. Typical values are measured at +25°C and VCC = +5V.
4. Modulus Control and Ratio Select are high impedance inputs which can be driven directly by standard
CMOS outputs.
5. Modulus control is latched at the end of the previous cycle.
6. See Figure 4.
7. See Figure 8.
8. These parameters are not tested but are guaranteee by design.
9. The ratio select pin is not intended to be switched dynamically.
Value
Min. Typ. Max.
OPERATING NOTES
The RF inputs are biased internally and are normally
coupled to the signal source with suitable capaitors.
The output stage has a novel design and is intended
to drive a CMOS synthesiser input. External pull-down
resistors or circuits are not required. The SP8715 is
not suitable for driving TTL or similar devices.
The device will operate down to DC frequencies for
non-sinusoidal signals provided that the input slew
rate is better than 100V/µs.
POWER DOWN (pin 7) is connected internally to a
pull-down resistor. If the battery economy facility is not
used, pin 7 should be either left unconnected or
connected to VEE.