MII JANTXV4N49A, JANTXV4N47A, JANTX4N47A, JANTX4N49A, JANS4N49A Datasheet

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4N47A 4N48A 4N49A
JAN, JANTX, JANTXV,
SINGLE CHANNEL OPTOCOUPLERS
OPTOELECTRONIC PRODUCTS
Features:
Applications:
High Reliability
Base lead provided for conventional transistor
biasing
Rugged package
High gain, high voltage transistor
Eliminate ground loops
Level shifting
Line receiver
Switching power supplies
Motor control
+1kV electrical isolation
DESCRIPTION
Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically sealed TO-5 metal can. The 4N47A, 4N48A and 4N49A’s can be tested to customer specifications, as well as to MIL-PRF- 19500 JAN, JANTX, JANTXV and JANS quality levels.
*ABSOLUTE MAXIMUM RATINGS
Input to Output Voltage.............................................................................................................................................................1kV
Emitter-Collector Voltage............................................................................................................................................................7V
Collector-Emitter Voltage (Value applies to emitter-base open-circuited & the input-diode equal to zero) ............................40V
Collector-Base Voltage .............................................................................................................................................................45V
Reverse Input Voltage ...............................................................................................................................................................2V
Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1) ......................................40mA
s, PRR < 300 pps) ...............................................................................1A
Peak Forward Input Current (Value applies for tw
< 1µ
Continuous Collector Current ................................................................................................................................................50mA
Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2) ..................................300mW
Storage Temperature........................................................................................................................................... -65°C to +125°C
Operating Free-Air Temperature Range ............................................................................................................. -55°C to +125°C
Lead Solder Temperature (1/16” (1.6mm) from case for 10 seconds) ................................................................................ 240°C
Notes:
1. Derate linearly to 125°C free-air temperature at the rate of 0.67 mA/°C above 65°C.
2. Derate linearly to 125°C free-air temperature at the rate of 3 mW/°C.
*JEDEC registered data
Package Dimensions Schematic Diagram
Mii
DIVISION
6 LEADS
0.0 1 6Ø [0.4 1]
0.040 [1.02]
0.305 [7.75]
0.335 [8.51]
NOTE: ALL LINEAR DIMENSIONS ARE IN INCHES (MILLIMETERS)
MAX.
0.155 [3.94]
0.185 [4.70]
0.019Ø[0.48]
0.500 [12.70] MIN.
0.0 2 2Ø [5.0 8]
5
6
3
2
1
0.034 [0.864]
0.028 [0.711]
A
7
45°
0.045 [1.14]
0.029 [0.73]
5
K
7
NOTE: COLLECTOR IS ISOLATED FROM CASE
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918
www.micropac.com
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C
3
E
1
B
2
4N47A, 4N48A, and 4N49A
JAN, JANTX, JANTXV, JANS, SINGLE CHANNEL OPTOCOUPLERS
*ELECTRICAL CHARACTERISTICS
TA = 25°C Unless otherwise specified
PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS NOTE
Input Diode Static Reverse Current I
Input Diode Static Forward Voltage -55°C +25°C +100°C
*OUTPUT TRANSISTOR
TA = 25°C Unless otherwise specified
R
1.0
V
F
0.8
1.4
0.7
100 µA VR = 2V
1.7
1.5
VI
= 10mA
E
1.3
PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS NOTE
Collector-Base Breakdown Voltage V
Collector-Emitter Breakdown Voltage V
Emitter-Collector Breakdown Voltage V
*COUPLED CHARACTERISTICS
TA = 25°C Unless otherwise specified
(BR)CBO
(BR)CEO
(BR)EBO
45 V IC = 100µA, I
40 V IC = 1mA, I
7VI
= 0, IE = 100µA, IF = 0
C
= 0, IF = 0
B
= 0, IF = 0
B
PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS NOTE
On State Collector Current 4N47A
4N48A
I
C(ON)
4N49A
On State Collector Current 4N47A
-55°C 4N48A
I
C(ON)
4N49A
On State Collector Current 4N47A +100°C 4N48A
I
C(ON)
4N49A
Off State Collector Current +25°CI
Off State Collector Current +100°C I
Collector-Emitter Saturation Voltage 4N47A
4N48A
4N49A
Input to Output Resistance R
Input to Output Capacitance C
Rise Time/ Fall Time 4N47A Phototransistor Operation 4N48A
4N49A
Rise Time/ Fall Time 4N47A
Photodiode Operation 4N48A
4N49A
C(OFF)
C(OFF)
V
CE(SAT)
V
CE(SAT)
V
CE(SAT)
t
r
t
r
t
r
tr / t
tr / t
tr / t
I-O
I-O
/ t / t / t
f
f
f
f
f
f
NOTES:
1. These parameters are measured between all phototransistor leads shorted together and with both input diode leads shorted together.
2. This parameter measured using pulse techniques t
0.5
1.0
2.0
0.7
1.4
2.8
0.5
1.0
2.0
11
10
=100µs, duty cycle < 1%.
w
mA
5
VCE = 5V, I
10
mA
VCE = 5V, I
mA
VCE = 5V, I
100 nA VCE = 20V, I
100
0.3
0.3
0.3
µ
AV
V
V
V
= 20V, I
CE
IC = 0.5mA, I
IC = 1mA, I
IC = 2mA, I
V
IN-OUT
5 pF f = 1MHz, V
20 25 25
0.85
0.85
0.85
µ
s
µ
s
VCC = 10V, IF = 10mA, RL = 100
µ
s
µ
s
µ
s
VCC = 10V, IF = 10mA, RL = 100
µ
s
= 0, IF = 1mA
B
= 0, IF = 2mA
B
= 0, IF = 2mA 2
B
= 0, IF = 0mA
B
= 0, IF = 0mA
B
= 0, IF = 2mA
B
= 0, IF = 2mA
B
= 0, IF = 2mA
B
= 1kV 1
= 1kV 1
IN-OUT
RECOMMENDED OPERATING CONDITIONS:
PARAMETER SYMBOL MIN MAX UNITS
Input Current, Low Level I
Input Current, High Level I
Supply Voltage V
FL
FH
CE
0100µA
210mA
510 V
SELECTION GUIDE
PART NUMBER PART DESCRIPTION
JAN4N47A 4N47A Optocoupler, JAN Screening level JAN4N48A 4N48AOptocoupler, JAN Screening level JAN4N49A 4N49A Optocoupler, JAN Screening level JANTX4N47A 4N47A Optocoupler, JANTX Screening level JANTX4N48A 4N48A Optocoupler, JANTX Screening level JANTX4N49A 4N49A Optocoupler, JANTX Screening level JANTXV4N47A 4N47A Optocoupler, JANTXV Screening level JANTXV4N48A 4N48A Optocoupler, JANTXV Screening level JANTXV4N49A 4N49A Optocoupler, JANTXV Screening level JANS4N47A 4N47A Optocoupler, JANS Screening level JANS4N48A 4N48A Optocoupler, JANS Screening level
*JEDEC registered data
JANS4N49A 4N49A Optocoupler, JANS Screening level
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918
www.micropac.com
3 - 15
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