MII JANTXV4N49, JANTXV4N48, JANTXV4N47, JANTX4N48, JANTX4N47 Datasheet

4N47
4N48

JAN, JANTX, JANTXV, SINGLE CHANNEL OPTOCOUPLERS

4N49

Features:

• High Reliability

• Base lead provided for conventional transistor

biasing

• Rugged package

• High gain, high voltage transistor

• +1kV electrical isolation

DESCRIPTION

Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically
sealed TO-5 metal can. The 4N47, 4N48 and 4N49’s can be tested to customer specifications, as well as to MIL-PRF-19500
JAN, JANTX, JANTXV and JANS quality levels.

*ABSOLUTE MAXIMUM RATINGS

Input to Output Voltage.............................................................................................................................................................1kV

Emitter-Collector Voltage............................................................................................................................................................7V

Collector-Emitter Voltage (Value applies to emitter-base open-circuited & the input-diode equal to zero) ............................40V

Collector-Base Voltage .............................................................................................................................................................45V

Reverse Input Voltage ...............................................................................................................................................................2V

Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1) ......................................40mA

Peak Forward Input Current (Value applies for tw

< 1µs, PRR < 300 pps) ...............................................................................1A

Continuous Collector Current ................................................................................................................................................50mA

Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2) ..................................300mW

Storage Temperature........................................................................................................................................... -65°C to +125°C

Operating Free-Air Temperature Range ............................................................................................................. -55°C to +125°C

Lead Solder Temperature (1/16” (1.6mm) from case for 10 seconds) ................................................................................ 240°C

Notes:

1. Derate linearly to 125°C free-air temperature at the rate of 0.67 mA/°C above 65°C.

2. Derate linearly to 125°C free-air temperature at the rate of 3 mW/°C.

*JEDEC registered data

Package Dimensions Schematic Diagram

Applications:

• Eliminate ground loops

• Level shifting

• Line receiver

• Switching power supplies

• Motor control

Mii

OPTOELECTRONIC

PRODUCTS{PRIVATE }

DIVISION

6 LEADS

0.016Ø [0.41]

0.040 [1.02]
MAX.

0.305 [7.75]

0.335 [8.51]

0.155 [3.94]

0.185 [4.70]

NOTE: ALL LINEAR DIMENSI ONS ARE IN INCHES (MILLIMETERS)

0.019Ø[0.48]

0.500 [12.70]
MIN.

0.022Ø [5.08]

5

6

3

2

1

0.034 [0.864]

0.028 [0.711]

A

5

7

45°

0.045 [1.14]

0.029 [0.73]

K

7

MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E.Walnut St., Garland, TX 75040 • [phone] • Fax [phone]

www.micropac.com E-MAIL: [e-mail]

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C

3

E

1

B

2

4N47, 4N48, and 4N49 JAN, JANTX, JANTXV, JANS, SINGLE CHANNEL OPTOCOUPLERS

*ELECTRICAL CHARACTERISTICS T

= 25°C Unless otherwise specified

A

PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS NOTE

Input Diode Static Reverse Current I

Input Diode Static Forward Voltage -55°C
+25°C
+100

*OUTPUT TRANSISTOR T

A

°

C

= 25°C Unless otherwise specified

R

V

F

100 µA VR = 2V

1.0

0.8

0.7

1.4

1.7

1.5

1.3

V

IE = 10mA

PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS NOTE

Collector-Base Breakdown Voltage V

Collector-Emitter Breakdown Voltage V

Emitter-Collector Breakdown Voltage V

*COUPLED CHARACTERISTICS T

= 25°C Unless otherwise specified

A

45 V IC = 100µA, I

(BR)CBO

40 V IC = 1mA, I

(BR)CEO

(BR)EBO

7

V IC = 0, IE = 100µA, IF = 0

= 0, IF = 0

B

= 0, IF = 0

B

PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS NOTE

On State Collector Current 4N47
4N48
4N49

On State Collector Current 4N47

-55°C 4N48
4N49

On State Collector Current 4N47
+100°C 4N48
4N49

Off State Collector Current +25°C I

Off State Collector Current +100°C I

Collector-Emitter Saturation Voltage 4N47

4N48

4N49

Input to Output Resistance R

Input to Output Capacitance C

Rise Time/ Fall Time 4N47
Phototransistor Operation 4N48
4N49

Rise Time/ Fall Time 4N47

Photodiode Operation 4N48

4N49

NOTES:

1. These parameters are measured between all phototransistor leads shorted together and with both input diode leads shorted together.

2. This parameter measured using pulse techniques t

I

C(ON)

I

C(ON)

0.5

1.0

2.0

0.7

1.4

mA

5

10

mA

2.8

I

C(ON)

0.5

1.0

mA

2.0

C(OFF)

C(OFF)

V

CE(SAT)

V

CE(SAT)

V

CE(SAT)

10

I-O

5 pF f = 1MHz, V

I-O

t

/ t

r

f

t

/ t

r

f

t

/ t

r

f

tr / t

f

tr / t

f

tr / t

f

w

100 nA VCE = 20V, I

100 µA VCE = 20V, I

0.3

11

V

20

0.85

0.3

0.3

25
25

0.85

0.85

V

V

V

µs
µs
µs

µs

µs

µs

=100µs, duty cycle < 1%.

VCC = 10V, IF = 10mA, RL = 100Ω

VCC = 10V, IF = 10mA, RL = 100Ω

VCE = 5V, I

VCE = 5V, I

VCE = 5V, I

IC = 0.5mA, I

IC = 1mA, I

IC = 2mA, I

IN-OUT

= 0, IF = 1mA

B

= 0, IF = 2mA

B

= 0, IF = 2mA

B

= 0, IF = 0mA

B

= 0, IF = 0mA

B

= 0, IF = 2mA

B

= 0, IF = 2mA

B

= 0, IF = 2mA

B

= 1kV 1

= 1kV 1

IN-OUT

MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E.Walnut St., Garland, TX 75040 • [phone] • Fax [phone]

www.micropac.com E-MAIL: [e-mail]

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2