MII JANTXV4N23A, JANTXV4N22A, JANTXV4N24A, JANTX4N24A, JANTX4N23A Datasheet
...
4N22A
4N23A
4N24A
JAN, JANTX, JANTXV,
SINGLE CHANNEL OPTOCOUPLERS
OPTOELECTRONIC PRODUCTS
Features:
Applications:
• Collector is electrically isolated from the case.
• Overall current gain...1.5 typical (4N24A)
• Base lead provided for conventional transistor
biasing
• Rugged package
• Eliminate ground loops
• Level shifting
• Line receiver
• Switching power supplies
• Motor control
• High gain, high voltage transistor
• +1kV electrical isolation
DESCRIPTION
Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a hermetically
sealed metal case. The 4N22A, 4N23A and 4N24A can be tested to customer specifications, as well as to MIL-PRF-19500
JAN, JANS, JANTX, and JANTXV quality levels.
Mii
DIVISION
*ABSOLUTE MAXIMUM RATINGS
Input to Output Voltage.............................................................................................................................................................
±
1kV
Emitter-Collector Voltage..............................................................................................................................................................4V
Collector-Emitter Voltage............................................................................................................................................................35V
Collector-Base Voltage ...............................................................................................................................................................35V
Reverse Input Voltage .................................................................................................................................................................2V
Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1) ....................................... 40mA
s, PRR < 300 pps) .................................................................................1A
Peak Forward Input Current (Value applies for tw
< 1µ
Continuous Collector Current ................................................................................................................................................. 50mA
Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2) ................................... 300mW
Storage Temperature............................................................................................................................................. -65°C to +125°C
Operating Free-Air Temperature Range ............................................................................................................... -55°C to +125°C
Lead Solder Temperature (1/16” (1.6mm) from case for 10 seconds) ..................................................................................240°C
Notes:
1. Derate linearly to 125°C free-air temperature at the rate of 0.67 mA/°C above 65°C.
2. Derate linearly to 125°C free-air temperature at the rate of 5 mW/°C.
* JEDEC registered data
0.305 [7.75]
0.335 [8.51]
NOTE: ALL LINEAR DIMENSIONS ARE IN INCHES (MILLIMETERS)
Package Dimensions Schematic Diagram
0.040 [1.02]
MAX.
0.016Ø [0.41]
0.019Ø [0.48]
0.500 [12.70]
0.155 [3.94]
0.185 [4.70]
6 LEADS
0.022Ø [5.08]
MIN.
5
6
3
2
1
0.034 [0.864]
0.028 [0.711]
TO5
7
45°
0.045 [1.14]
0.029 [0.73]
A
5
K
7
C
3
E
1
B
2
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918
www.micropac.com
E-MAIL: optosales@microropac.com
3 - 10
4N22A, 4N23A, and 4N24A
JAN, JANTX, JANTXV, SINGLE CHANNEL OPTOCOUPLERS
*ELECTRICAL CHARACTERISTICS INPUT LED
TA = 25°C Unless otherwise specified
PARAMETER SYMBOL MIN MAX UNITS TEST CONDITIONS NOTE
Input Diode Static Reverse Current I
Input Diode Static Forward Voltage -55°C
+25°C
+125°C
*OUTPUT TRANSISTOR
TA = 25°C Unless otherwise specified
R
1
V
F
0.8
0.7
PARAMETER SYMBOL MIN MAX UNITS TEST CONDITIONS NOTE
Collector-Base Breakdown Voltage V
Collector-Emitter Breakdown Voltage V
Emitter-Base Breakdown Voltage V
*COUPLED CHARACTERISTICS
TA = 25°C Unless otherwise specified
(BR)CBO
(BR)CEO
(BR)EBO
35 V IC = 100µA, I
35 V IC = 1mA, I
4VI
PARAMETER SYMBOL MIN MAX UNITS TEST CONDITIONS NOTE
On State Collector Current 4N22A
4N23A
I
C(ON)
4N24A
On State Collector Current 4N22A
4N23A
I
C(ON)
4N24A
On State Collector Current 4N22A
-55°C 4N23A
I
C(ON)
4N24A
On State Collector Current 4N22A
+100°C 4N23A
I
C(ON)
4N24A
Off State Collector Current +25°CI
Off State Collector Current +100°CI
Collector-Emitter Saturation Voltage 4N22A
4N23A
4N24A
C(OFF)
C(OFF)
V
CE(SAT)
V
CE(SAT)
V
CE(SAT)
0.15
0.2
0.4
2.5
6
10
1
2.5
4
1
2.5
4
100 µA VR = 2V
1.5
1.3
VI
= 10mA
F
1.2
B
= 0, IF = 0
B
= 0, IE = 100µA, IF = 0
C
mA V
= 5V, IB = 0, IF = 2mA
CE
mA
V
= 5V, IB = 0, IF = 10mA
CE
mA
V
= 5V, IB = 0, IF = 10mA
CE
mA
V
= 5V, IB = 0, IF = 10mA
CE
100 nA V
100
0.3
0.3
0.3
µ
AV
V
V
V
= 20V, IB = 0, IF = 0mA
CE
= 20V, IB = 0, IF = 0mA
CE
IC = 2.5mA, IB = 0, IF = 20mA
IC = 5mA, IB = 0, IF = 20mA
IC = 10mA, IB = 0, IF = 20mA
= 0, IF = 0
Input to Output Resistance
Input to Output Capacitance
Rise Time 4N22A
4N23A
4N24A
Fall Time 4N22A
4N23A
4N24A
R
I-O
C
I-O
t
r
t
r
t
r
t
f
t
f
t
f
10
11
5pF
15
15
20
15
15
20
V
= 1kV
IN-OUT
F = 1MHz, V
µ
s
µs
µ
s
µ
s
µs
µ
s
V
= 10V, IF = 10mA, RL = 100
CC
V
=10V, IF = 10mA, RL = 100
CC
IN-OUT
= 1kV
Ω
Ω
NOTES:
1. These parameters are measured between all phototransistor leads shorted together and with both input diode leads shorted together.
1
1
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918
www.micropac.com
E-MAIL: optosales@microropac.com
3 - 11
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