MII 66191-105, 66191-103, 66191-101, 66191-001 Datasheet
PROTON RADIATION TOLERANT OPTOCOUPLER
66191
(Single Channel, Electrical EQUIVALENT TO 66099)
OPTOELECTRONIC PRODUCTS
Mii
DIVISION
REVISION A 7/14/00
Features:
Applications:
• Current transfer ratio: 150% typical
• Base lead provided for conventional transistor
biasing
Low power consumption
•
High radiation immunity
•
1000 Vdc isolation test voltage
•
Military and Space
•
High Reliability Systems
•
Voltage Level Shifting
•
Isolated Receiver Inputs
•
Communication Systems
•
DESCRIPTION
Radiation tests performed on the 66099 optocoupler have shown that the electrical performance of the device after irradiation
is an order of magnitude better than the 4N49 optocouplers. The 66191 has the same components and layout in a 6 pin,
hermetically sealed leadless chip carrier package. Figures 1 and 2 from the 66099 data sheet illustrate the radiation
performance of the device
ABSOLUTE MAXIMUM RATINGS (ta = 25°C unless otherwise noted)
Storage Temperature..........................................................................................................................................-55°C to +150°C
Operating Free-Air Temperature Range.............................................................................................................-55°C to +100°C
Lead Solder Temperature (10 seconds max)......................................................................................................................240°C
Input to output Isolation Voltage.........(see Note 1)...........................................................................................................+1kVdc
* Input Diode
Peak Forward Input Current................................................................. .............................................................................. 50mA
Reverse Input Voltage...............................................................................................................................................................7V
Input Power Dissipation.......................(see Note 2)............................................................................................................80mW
*Output Photodetector
Continuous Collector Current................... ...........................................................................................................................50mA
Collector-Emitter Voltage........................................................................................................................................................40V
Emitter-Collector Voltage.......................................................................................................................................................... 5V
Collector-Base Voltage............................................................................................................................................................40V
Power Dissipation...............................(see Note 3)...........................................................................................................300mW
Notes:
1. Measured with input diode leads shorted together and output leads shorted together
2. Derate linearly 0.80mW/°C above 25°C.
3. Derate linearly 3.0mW/°C above 25°C.
Package Dimensions Schematic Diagram
0.253 [6.42]
0.237 [6.01]
PIN 1
IDENTIFIER
0.178 [4.52]
0.162 [4.11]
0.036 [0.91]
0.020 [0.51]
2
1
6
0.098 [2.49]
0.082 [2.08]
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918
3
4
5
0.055 [1.40]
0.045 [1.14]
0.078 [1.99]
0.062 [1.58]
0.087 [2.22]
0.071 [1.81]
0.113 [2.87]
0.097 [2.46]
www.micropac.com
E-MAIL:
1
6
optosales@micropac.com
5 - 40
C
3
E
5
B
4
66191
PROTON RADIATION TOLERANT OPTOCOUPLER. SINGLE CHANNEL
REVISION A 7/14/00
ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise specified.
PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS NOTE
Input Diode Static Reverse Current I
Input Diode Static Forward Voltage V
R
F
.8 1.8 2 V I
100 µA V
= 3V
R
= 10mA
F
OUTPUT TRANSISTOR
TA = 25°C unless otherwise specified.
PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS NOTE
Collector-Base Breakdown Voltage V
Collector-Emitter Breakdown Voltage V
Emitter-Collector Breakdown Voltage V
Collector-Emitter Dark Current
+100°C
(BR)CBO
(BR)CEO
(BR)ECO
I
CEO
40 V IC = 100µA, I
40 V IC = 1mA, IB = 0, I
5V I
100
20
nA
µA
= 100µA, I
E
VCE = 20V,
F
F
= 0
F
= 0
COUPLED CHARACTERISTICS
TA = 25°C unless otherwise specified.
PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS NOTE
Current Transfer Ratio CTR 100 % VCE = 1V, IF = 10mA
Collector-Emitter Saturation Voltage V
Input -Output Isolation Current I
CE(SAT)
I/o
0.3 V IF = 20mA, IC=10mA
100
nA
V
IN-OUT
= 1000V 1
= 0
Input to Output Capacitance C
Rise Time t
Fall Time t
NOTES:
1) These parameters are measured between all phototransistor leads shorted together and with both input diode leads shorted together.
IO
r
f
2.5 5 pF f = 1MHz, V
20
20
µ
sV
µ
sV
= 10V, I
CC
= 10V, I
CC
RL = 100
RL = 100
= 1kV 1
IN-OUT
= 10mA,
F
Ω
= 10mA,
F
Ω
RECOMMENDED OPERATING CONDITIONS:
PARAMETER SYMBOL MIN MAX UNITS
Input Current, Low Level I
Input Current, High Level I
Supply Voltage V
Operating Temperature T
FL
FH
CE
A
0 100
10 20 mA
520V
-55 +100
SELECTION GUIDE
PART NUMBER PART DESCRIPTION
66191-001 Proton radiation tolerant optocoupler, commercial
66191-101
66191-103 Proton radiation tolerant optocoupler , 100% JANTX screened
66191-105 Proton radiation tolerant optocoupler , 100% JANTXV screened
Proton radiation tolerant optocoupler, -55 to +100°C Temperature range (JAN equivalent)
µ
A
°
C
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918
www.micropac.com
E-MAIL:
optosales@micropac.com
5 - 41
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