MII 66183-105, 66183-103, 66183-101, 66183-001 Datasheet

PROTON RADIATION TOLERANT OPTOCOUPLER
66183
REVISION C 5/6/02
Features:
High Reliability Base lead provided for conventional transistor
biasing Rugged package
Stability over wide temperature
+1000V electrical isolation
(Single Channel, Electrically Similar to 4N49)
OPTOELECTRONIC PRODUCTS
Mii
DIVISION
Applications:
Eliminate ground loops
Level shifting
Line receiver
Switching power supplies
Motor control
DESCRIPTION
The
is a single channel device electrically similar to the 4N49. This product has been designed to be more tolerant to
66183
proton radiation. The 66183 optocoupler is packaged in a hermetically sealed 6 pin leadless chip carrier (LCC). This device can be supplied to customer specifications as well as tested in accordance with MIL-PRF-19500 to Class S level.
ABSOLUTE MAXIMUM RATINGS
Input to Output Voltage........................................................................................................................................................... 1kV
Emitter-Base Voltage................................................................................................................................................................7V
Collector-Emitter Voltage (Value applies to emitter-base open-circuited & the input-diode equal to zero) ......................... 40V
Collector-Base Voltage ........................................................................................................................................................... 45V
Reverse Input Voltage ............................................................................................................................................................. 2V
Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1) ................................... 50mA
Peak Forward Input Current (Value applies for tw
Continuous Collector Current ..............................................................................................................................................50mA
Continuous Transistor Power Dissipation at (or below) 25
s, PRR < 300 pps) ............................................................................. 1A
≤1µ
°
C Free-Air Temperature (see Note 2)................................ 300mW
Storage Temperature......................................................................................................................................... -55°C to +150°C
Operating Free-Air Temperature Range ............................................................................................................-55°C to +100°C
Lead Solder Temperature (10 seconds max.) .................................................................................................................. 240°C
Notes:
1. Derate linearly to 100°C free-air temperature at the rate of 0.80 mW/°C above 25°C.
2. Derate linearly to 100°C free-air temperature at the rate of 3 mW/°C above 25°C.
Package Dimensions Schematic Diagram
0.253 [6.42]
0.237 [6.01]
PIN 1
IDENTIFIER
0.178 [4.52]
0.162 [4.11]
0.036 [0.91]
0.020 [0.51] 2
1
6
0.098 [2.49]
0.082 [2.08]
ALL DIMENSIONS ARE IN INCHES [MILLIMETERS]
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E.Walnut Str., Garland, TX 75040 • (972)272-3571 • Fax (972)487-6918
3
4
5
0.055 [1.40]
0.045 [1.14]
0.078 [1.99]
0.062 [1.58]
0.087 [2.22]
0.071 [1.81]
0.113 [2.87]
0.097 [2.46]
www.micropac.com
1
6
5 - 40
C
3
E
5
B
4
66183
PROTON RADIATION TOLERANT OPTOCOUPLER
(Electrically similar to 4N49)
REVISION C 5/6/02
ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise specified.
PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS NOTE
Input Diode Static Reverse Current I
Input Diode Static Forward Voltage -55°C V
Input Diode Static Forward Voltage +25°C V
Input Diode Static Forward Voltage +100°C V
OUTPUT TRANSISTOR
TA = 25°C unless otherwise specified.
R
F
F
F
100 µA V
1.0 2.2 V I
= 3V
R
= 10mA
F
0.8 1.8 2.0 V IF = 10mA
0.8 2.2 V IF = 10mA
PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS NOTE
Collector-Base Breakdown Voltage V
Collector-Emitter Breakdown Voltage V
Emitter-Base Breakdown Voltage V
Off-State Collector Current
+100°C
COUPLED CHARACTERISTICS
TA = 25°C unless otherwise specified.
45 V IC = 100µA, IB = 0, I
(BR)CBO
40 V IC = 1mA, IB = 0, I
(BR)CEO
(BR)EBO
I
CEO
I
CEO
2
100
V IC = 0mA, IE = 100µA, I
100
nA
µ
A
VCE = 20V, IF = 0mA, IB = 0
VCE = 20V, IF = 0mA, IB = 0
= 0
F
= 0
F
F
PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS NOTE
On State Collector Current I
On State Collector Current +100°C I
On State Collector Current -55°C I
Collector-Emitter Saturation Voltage V
Input to Output Internal Resistance R
C(ON)
C(ON)
C(ON)
CE(SAT)
IO
Input to Output Capacitance CIO 2.5 5 pF f = 1MHz, V
Rise Time-Phototransistor Operation
t
r
Fall Time-Phototransistor Operation
t
f
NOTES:
1. These parameters are measured between all phototransistor leads shorted together and with both input diode leads shorted together.
2. This parameter must be measured using pulse techniques (t
RECOMMENDED OPERATING CONDITIONS:
PARAMETER SYMBOL MIN MAX UNITS
Input Current, Low Level I
Input Current, High Level I
Supply Voltage V
Operating Temperature TA -55 100 °C
2.0 mA VCE = 5V, IF = 1mA, IB=0
2.0 mA VCE = 5.0V, IF = 2mA, IB=0
2.8 mA VCE = 5V, IF = 2mA, IB=0
0.3 V IF = 2mA, IC= 2mA
1011 Ω V
IN-OUT
= 1000V
= 1000V 1
IN-OUT
10 25 µs VCC = 10V, I
= 10mA,
F
RL = 100Ω, IB = 0
10 25 µs VCC = 10V, I
= 10mA,
F
RL = 100Ω, IB = 0
= 100µs duty cycle < 1%).
W
FL
FH
CE
0 90 µA
2 10 mA
5 10 V
SELECTION GUIDE
PART NUMBER PART DESCRIPTION
66183-001 Single channel proton radiation tolerant optocoupler - commercial 66183-101 Single channel proton radiation tolerant optocoupler – screened to JAN 66183-103 Single channel proton radiation tolerant optocoupler – screened to JANTX 66183-105 Single channel proton radiation tolerant optocoupler – screened to JANTXV
= 0
1
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E.Walnut Str., Garland, TX 75040 • (972)272-3571 • Fax (972)487-6918
www.micropac.com
5 - 41
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