MII 66168-300, 66168-105, 66168-103, 66168-101, 66168-001 Datasheet

66168 PROTON RADIATION TOLERANT OPTOCOUPLER

(Pin-for-Pin Replacement for 4N49)

OPTOELECTRONIC PRODUCTS

Mii

DIVISION

Rev. A 4/25/00

Features:

• High Reliability

• Base lead provided for conventional transistor

biasing

• Rugged package

• Stability over wide temperature

• +1000V electrical isolation

Applications:

• Eliminate ground loops

• Level shifting

• Line receiver

• Switching power supplies

• Motor control

DESCRIPTION

The 66168 is a modified 4N49 (LED) designed to be more tolerant to proton radiation. The 66168 optocoupler is packaged
in a hermetically sealed TO-5. This device can be supplied to customer specifications as well as tested in accordance with
MIL-PRF-19500/548 (4N49) to JAN, JANTX, JANTXV and JANS levels.

ABSOLUTE MAXIMUM RATINGS

Input to Output Voltage.........................................................................................................................................................+

1kV

Emitter-Base Voltage................................................................................................................................................................7V

Collector-Emitter Voltage (Value applies to emitter-base open-circuited & the input-diode equal to zero) ..........................40V

Collector-Base Voltage ........................................................................................................................................................... 45V

Reverse Input Voltage ............................................................................................................................................................. 2V

Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1) .................................... 40mA

Peak Forward Input Current (Value applies for tw

< 1µs, PRR < 300 pps) .............................................................................1A

Continuous Collector Current ..............................................................................................................................................50mA

Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2) ................................300mW

Storage Temperature..........................................................................................................................................-65°C to +125°C

Operating Free-Air Temperature Range ............................................................................................................-55°C to +100°C

Lead Solder Temperature (10 seconds max.) ................................................................................................................... 240°C

Notes:

1. Derate linearly to 125°C free-air temperature at the rate of 0.67 mA/°C above 65°C.

2. Derate linearly to 125°C free-air temperature at the rate of 3 mW/°C.

Package Dimensions Schematic Diagram

6 LEADS

0.016Ø [0.41]

0.040 [1.02]

0.305 [7.75]

0.335 [8.51]

NOTE: ALL LINEAR DIMENSIONS ARE IN INCHES (MILLIMETERS)

MAX.

0.155 [3.94]

0.185 [4.70]

0.019Ø[0.48]

0.500 [12.70]
MIN.

0.022Ø [5.08]

5

6

3

2

1

0.034 [0.864]

0.028 [0.711]

A

5

7

45°

0.045 [1.14]

0.029 [0.73]

K

7

MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • [phone] • Fax [phone]

www.micropac.com E-MAIL: OPTOSALES @ MICROPAC.COM

3 - 16

C

3

E

1

B

2

66168 PROTON RADIATION TOLERANT OPTOCOUPLER (Pin-for-Pin Replacement for 4N49)

Rev. A 4/25/00

ELECTRICAL CHARACTERISTICS

TA = 25°C unless otherwise specified.

PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS NOTE

Input Diode Static Reverse Current I

Input Diode Static Forward Voltage -55°C V

Input Diode Static Forward Voltage +25°C V

Input Diode Static Forward Voltage +100°C V

OUTPUT TRANSISTOR

TA = 25°C unless otherwise specified.

PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS NOTE

Collector-Base Breakdown Voltage V

Collector-Emitter Breakdown Voltage V

Emitter-Base Breakdown Voltage V

Off-State Collector Current +100°C I

COUPLED CHARACTERISTICS

TA = 25°C unless otherwise specified.

PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS NOTE

On State Collector Current I

On State Collector Current +100°C I

On State Collector Current -55°C I

Collector-Emitter Saturation Voltage V

Input to Output Internal Resistance R

Input to Output Capacitance CIO 2.5 5 pF f = 1MHz, V

Rise Time-Phototransistor Operation

Fall Time-Phototransistor Operation

Rise Time-Photodiode Operation t

Fall Time-Photodiode Operation t

NOTES:

1. These parameters are measured between all phototransistor leads shorted together and with both input diode leads shorted together.

2. This parameter must be measured using pulse techniques (tW = 100µs duty cycle < 1%).

PARAMETER SYMBOL MIN MAX UNITS

Input Current, Low Level I

Input Current, High Level I

Supply Voltage V

Operating Temperature TA -55 100

PART NUMBER PART DESCRIPTION

66168-001 Single Channel Commercial Proton Radiation Tolerant (4N49) Optocoupler (0° to 70°C)
66168-101 Single Channel Proton Radiation Tolerant (4N49) Screened to JAN level
66168-103 Single Channel Proton Radiation Tolerant (4N49) Screened to JANTX level
66168-105 Single Channel Proton Radiation Tolerant (4N49) Screened to JANTXV level
66168-300 Single Channel Proton Radiation Tolerant (4N49) Screened to JANS level

R

F

F

F

100 µA V

1.0 2.4 V I

0.8 1.7 2.0 V IF = 10mA

0.7 1.8 V I

45 V IC = 100µA, IB = 0, IF = 0

(BR)CBO

40 V IC = 1mA, IB = 0, IF = 0

(BR)CEO

(BR)EBO

C(OFF)

I

C(OFF)

C(ON)

C(ON)

C(ON)

CE(SAT)

IO

t

r

7

100

2.0 mA VCE = 5V, IF = 1mA

0.5 mA VCE = 0.4V, IF = 2mA 2

0.7 mA VCE = 5V, IF = 2mA

0.3 V IF = 2mA, IC = 2mA, I

1011 Ω V

10 25

V IC = 0mA, IE = 100µA, IF = 0

100

nA

µA

µs

VCE = 20V, IF = 0mA, IB = O

VCE = 20V, IF = 0mA, I

VCC = 10V, IF = 5mA,

t

f

10 25

µs

VCC = 10V, IF = 5mA,

r

f

0.85 3 µs VCC = 10V, IF = 5mA,

0.85 3 µs VCC = 10V, IF = 5mA,

= 2V

R

= 10mA

F

= 10mA

F

B

= 0

B

= 500V 1

IN-OUT

= 1kV 1

IN-OUT

RL = 100Ω, IB = 0

RL = 100Ω, I

= 0

B

RL = 100Ω, IE = 0

= 100Ω, IE = 0

R

L

= O

RECOMMENDED OPERATING CONDITIONS:

FL

FH

CE

0 90 µA

2 10 mA

5 10 V

°

C

SELECTION GUIDE

MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • [phone] • Fax [phone]

www.micropac.com E-MAIL: OPTOSALES @ MICROPAC.COM

3 - 17