MII 66099-415, 66099-401 Datasheet

HIGH VOLTAGE

66099-4XX RADIATION TOLERANT OPTOCOUPLER

Rev A 9\25\02

Features:

• Designed to meet or exceed MIL-PRF-19500
radiation requirements

• High Current Transfer Ratio - 200% typical

• 1kVdc electrical input to output isolation

• Base lead provided for conventional transistor

Applications:

• Eliminate ground loops

• Level shifting

• Line receiver

• Switching power supplies

• Motor control

OPTOELECTRONIC PRODUCTS

Mii

DIVISION

biasing

• 150 V Breakdown voltage

DESCRIPTION

The 66099-4XX optocoupler consists of a 660 nm GaAIAs LED optically coupled to a high voltage photodiode driving a
high voltage transistor mounted in a hermetic TO-5 package. This configuration has proven to be highly tolerant to both
proton and total dose radiation.

ABSOLUTE MAXIMUM RATINGS

Storage Temperature..........................................................................................................................................-65°C to +150°C

Operating Free-Air Temperature Range ............................................................................................................-55°C to +100°C

Lead Solder Temperature (1/16” (1.6mm) from case for 5 seconds) ................................................................................ 240°C

Input Diode Forward DC Current......................................................................................................................................... 40mA

Input Power Dissipation (see Note 1)................................................................................................................................80mW

Reverse Input Voltage ............................................................................................................................................................. 3V

Collector-Base Voltage ......................................................................................................................................................... 150V

Collector-Emitter Voltage .....................................................................................................................................................150V

Emitter-Base Voltage................................................................................................................................................................6V

Continuous Collector Current ............................................................................................................................................300mA

Continuous Transistor Power Dissipation (see Note 2)...................................................................................300mW

Notes:

1. Derate linearly 0.80 mW/°C above 25°C.

2. Derate linearly 3.0 mW/°C above 25°C.

Package Dimensions Schematic Diagram

6 LEADS

Ø0.016 [0.41]

0.040 [1.02]
MAX.

0.305 [7.75]

0.335 [8.51]

NOTE: ALL LINEAR DIMENSIONS ARE IN INCHES (MILLIMETERS)

0.370 [9.40]

0.336 [8.51]

0.500 [12.70]

0.155 [3.94]

0.185 [4.70]

Ø0.019 [0.48]

Ø0.200 [5.08]

MIN.

MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • [phone] • Fax [phone]

www.micropac.com E-MAIL: [e-mail]

5

3

2

1

0.034 [0.864]

0.028 [0.711]

6

45°

7

3 - 20

0.045 [1.14]

0.029 [0.73]

A

5

K

7

C

3

E

1

B

2

66099 –4XX HIGH VOLTAGE RADIATION TOLERANT OPTOCOUPLER

Rev A 9\25\02

ELECTRICAL CHARACTERISTICS

TA = 25°C unless otherwise specified.

PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS

Input Diode Static Reverse Current I

Input Diode Static Forward Voltage V

R

F

OUTPUT TRANSISTOR CHARACTERISTICS

TA = 25°C unless otherwise noted

PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS

Collector-Base Breakdown Voltage V

Collector-Emitter Breakdown Voltage V

Emitter-Base Breakdown Voltage V

Collector-Emitter Cutoff Current I

COUPLED CHARACTERISTICS

TA = 25°C unless otherwise noted

(BR)CBO

(BR)CEO

(BR)EBO

100 nA V

CEO

PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS

Current Transfer Ratio CTR

Collector-Emitter Saturation Voltage V

Input-Output Isolation Current I

Rise Time t

Fall Time t

CE(SAT)

100 nA V

ISO

r

f

RECOMMENDED OPERATING CONDITIONS:

PARAMETER SYMBOL MIN MAX UNITS

Input Current, Low Level I

Input Current, High Level I

Operating Temperature TA -55 100 °C

ORDERING INFORMATION:

PART NUMBER DESCRIPTION

66099-401 Radiation Tolerant, High Voltage Optocoupler, Commercial

66099-415 Radiation Tolerant, High Voltage Optocoupler, Screened

100 µA V

0.8 2 V IF = 10mA

150 V IC = 100µA, IB = 0, IF = 0

150 V IC = 1mA, IB = 0, IF = 0

4

100 % V

0.3 V IF = 20mA, IC = 10mA

20 µs V

20 µs V

V IC = 0mA, IE = 100µA, IF = 0

CE

CE

= 1V, I

CE

I-O

= 10V, I

RL = 100Ω

= 10V, I

RL = 100Ω

= 2V

R

= 20V

CE

F

= 1000V

F

F

= 10mA

= 10mA,

= 10mA,

0 10 µA

1 20 mA

FH

FL

MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • [phone] • Fax [phone]

www.micropac.com E-MAIL: [e-mail]

3 - 21