MII 66004-102, 66004-101, 66004-012, 66004-011, 66004-002 Datasheet

...
40kV HIGH VOLTAGE ISOLATOR WITH PHOTOTRANSISTOR
66004
or PHOTODARLINGTON OUTPUT, CERAMIC PACKAGE
Features:
Applications:
High Reliability
Rugged package
Stability over wide temperature
40kVdc electrical isolation
Grid current modulator
Power Supply Feedback
Switching between power supplies
Patient station isolation
DESCRIPTION
Mii
OPTOELECTRONIC PRODUCTS
DIVISION
In the
66004,
high voltage isolation is provided with a GaAlAs light emitting diode and by your choice of outputs, either silicon phototransistor or photodarlington, hermetically sealed in TO-46 packages and mounted in a high reliability, hermetically sealed, ceramic package. Available in commercial (0 and full Military temperature range (-55
to +125°C).
°
Contact the factory for special custom or multi-channel
to +70°C), extended temperature range (-40° to +85°C)
°
requirements!
ABSOLUTE MAXIMUM RATINGS
Collector-Emitter Voltage (Value applies to emitter-base open-circuited & the input-diode equal to zero) ....................... 35V
Emitter-Collector Voltage........................................................................................................................................................ 7V
Continuous Collector Current ............................................................................................................................................ 50mA
Continuous Transistor Power Dissipation ..................................................................(see Note 1) ..............................250mW
Input to Output Isolation Voltage ........................................................................................................................................ 40kV
Input Diode Continuous Forward Current at (or below) 65°
C Free-Air Temperature ................................................... 100mA
Reverse Input Voltage .......................................................................................................................................................... .2V
Continuous LED Power Dissipation ..........................................................................(see Note 1) ................................ 250mW
Storage Temperature........................................................................................................................................ -65
Operating Free-Air Temperature Range .......................................................................................................... -55
Lead Solder Temperature (1/16” from case for 10 seconds max.) ..................................................................................240
C to +150°C
°
C to +125°C
°
°
Notes:
1. Derate linearly to 125°C free-air temperature at the rate of 2.45 mW/°C.
ANODE(+)
Ø0.0175 [Ø0.44]
CATHODE(-)
2 LEADS
0.500 MIN [12.70]
ALL DIME NS ION S AR E IN INC HE S [M ILL IMETE R S] N OM IN AL
Package Dimensions Schematic Diagram
A
-X01
K
-X02
A
K
BASE
Ø0.0175 [Ø0.44]
EMITTER(-)
16,000 V, BLACK DOT
RED DOT
3 LEADS
0.500 MIN [12.70]
0.8493 [21.57]
COLLEC TOR (+)
Ø0.1550 [Ø3.94]
Ø0.3100 [Ø7.87]
(1)
(2)
(1)
(2)
NOTE: BLACK DOT INDICATES ANODE FOR LED
RED DOT INDICATES COLLECTOR FOR TRANSISTOR.
C
(3)
E
(5)
B
(4)
C
(3)
(5)
B
(4)
C
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918
www.micropac.com
7 - 3
66004
ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise specified.
PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS
Input Diode Static Reverse Current 66004-X01 66004-X02
40kV HIGH VOLTAGE ISOLATER
I
R
100 µA V
R
= 2V
Input Diode Static Forward Voltage 66004-X01 66004-X02
Reverse Breakdown Voltage 66004-X01 66004-X02
Input Diode Capacitance 66004-X01 66004-X02
OUTPUT TRANSISTOR
TA = 25°C unless otherwise specified.
PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS
Collector-Emitter Breakdown Voltage V
Collector-Emitter Dark Current I
COUPLED CHARACTERISTICS
TA = 25°C unless otherwise specified.
PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS
Current Transfer Ratio 66004-X01
66004-X02
Collector-Emitter Saturation Voltage 66004-X01
66004-X02
V
V
F
B
VR
C
IN
(BR)CEO
CEO
CTR
CE(SAT)
1.15 1.8 V IF = 20mA
210 V I
= 100µA
R
25 pF V = 0V, f = 1MHz
35 V IC = 1mA, IB = 0, IF = 0
75
300
5
nA
VCE = 10V, IF = 0mA
nA
%V
= 5V, IF = 10mA
CE
100
0.5
VI
= 50mA, IC = 1mA
F
1.2
DC Isolation Voltage 66004-X01
66004-X02
Rise Time 66004-X01
66004-X02
Fall Time 66004-X01
66004-X02
PARAMETER SYMBOL MIN MAX UNITS
Input Current, High Level I
Supply Voltage V
Operating Temperature T
PART # PART DESCRIPTION 66004-001 Transistor output, military operating range (-55° to +125°C) 66004-101 66004-011
Transistor output, full mil-temp (-55° to +125°C) with 100% device screening (on discrete components)
Transistor output, commercial version Isolator(0° to 70°C) 66004-002 Darlington output, military operating range (-55° to +125°C) 66004-102 Darlington output, full mil-temp (-55° to +125°C) with 100% device screening (on discrete components) 66004-012 Darlington output, commercial version Isolator(0° to 70°C)
V
ISO
40
40
t
r
10
20
t
f
10
20
RECOMMENDED OPERATING CONDITIONS:
FH
CE
A
16 50 mA
510 V
-55 125
SELECTION GUIDE
kV
µ
sV
µ
sV
CC
CC
= 5V, I
= 5V, I
=16mA, RL=100
F
=16mA, RL=100
F
°
C
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E. Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918
www.micropac.com
7 - 4
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